M29W160EB80ZA3SE vs M29W160ET70N3F 比較
詳細並排比較 M29W160EB80ZA3SE 由 Micron Technology 與 M29W160ET70N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W160EB80ZA3SE | M29W160ET70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel) | Parallel NOR Flash |
| 記憶體容量 | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2 M x 8 / 1 M x 16) |
| Access Time | 80 ns | 70 ns |
| 介面 | Parallel (Byte-wide / Word-wide) | — |
| 供應電壓 | 2.7 V to 3.6 V | 3 V / 3.3 V |
| 組織 | 16 Mbit Boot Block, x8/x16 selectable | — |
| 工作溫度 | -40C to +125C | — |
| 封裝 | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) | 48-pin TSOP |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape and Reel |
| Qualification | AEC-Q100 (automotive grade per datasheets.com listing) | AEC-Q100 qualified |
| Programming Supply | Single 3V supply for program, erase and read | — |
| Technology Family | M29W160EB (3rd generation M29W series) | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Erase Block Architecture | Boot block (parameter and main blocks) | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| RoHS 狀態 | Pb-free (SE suffix) | RoHS-compliant package (F option) |
| Technology | — | CMOS |
| Boot Block Architecture | — | Top boot |
| Bus Configuration | — | x8 / x16 selectable |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Programming Interface | — | Parallel command set |
| Number of Terminals | — | 48 |