M29W400FT55N3E vs M29W800FB70N3E Perbandingan

Perbandingan bersamaan detil M29W400FT55N3E dari Micron Technology dan M29W800FB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ Aktif
Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W400FT55N3E M29W800FB70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori Flash - NOR Memory IC NOR Flash
Ukuran Memori 4 Mbit —
Antarmuka Parallel Parallel
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) up to 3.6 V for program, erase and read
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
Suhu Kerja -40C to +125C -40C to +125C
Temperature Grade Automotive —
Paket 48-TSOP I 48-TSOP (12 x 20 mm), TSOP I
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
Tipe Mounting Surface Mount Surface Mount
Tingkat Sensitivitas Kekeringan (MSL) 3 (168 Hours) —
Packaging Tray —
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
Density — 8 Mbit (8388608 bits)
Organisasi — 512K x 16 / 1M x 8
Lebar Bus Data — x8/x16 (BYTE# selectable)
Programming Time — 10 us per byte/word (typical)
Memory Blocks — 19 blocks, 1 boot block (bottom - FB configuration)
Jumlah Pin — 48
Status RoHS — RoHS compliant (plastic TSOP-48)
Product Longevity Program — No
FBGA Code — N/A
Chipset Validation — N/A

Spek dan Sumber

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