M29W800FB70N3E vs M29F800FT55N3E2 Perbandingan

Perbandingan bersamaan detil M29W800FB70N3E dari Micron Technology dan M29F800FT55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ Aktif
Micron Technology
M29F800FT55N3E2 M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron

M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron

M29F800FT55N3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W800FB70N3E M29F800FT55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash NOR Flash
Density 8 Mbit (8388608 bits) 8389 kbits
Organisasi 512K x 16 / 1M x 8 —
Lebar Bus Data x8/x16 (BYTE# selectable) —
Access Time 70 ns 55 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read —
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
Antarmuka Parallel Parallel
Suhu Kerja -40C to +125C -40C to +125C
Paket 48-TSOP (12 x 20 mm), TSOP I 48-TSOP I
Jumlah Pin 48 —
Tipe Mounting Surface Mount Surface Mount
Status RoHS RoHS compliant (plastic TSOP-48) Compliant (E suffix = lead-free/RoHS)
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
Memory Organization — 512K x 16 (8 Mbit)
Tegangan Pemuat — 5 V
Boot Block Architecture — Top Boot Block
Word/Byte Configuration — BYTE# pin selectable (16-bit / 8-bit)
Hardware Reset / Power-Down — RP# pin
Embedded Program/Erase Controller — Yes (byte/word program, block erase)
Program/Erase Endurance — 100,000 cycles per block (typical for family)
Data Retention — >20 years (typical for family)
Ready/Busy Output — Yes

Spek dan Sumber

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