M29W800FB70N3E vs M29F800FT55N3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W800FB70N3E disebabkan oleh Micron Technology dan M29F800FT55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W800FB70N3E | M29F800FT55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Density | 8 Mbit (8388608 bits) | 8389 kbits |
| Organisasi | 512K x 16 / 1M x 8 | — |
| Lebar Bus Data | x8/x16 (BYTE# selectable) | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase and read | — |
| Programming Time | 10 us per byte/word (typical) | — |
| Memory Blocks | 19 blocks, 1 boot block (bottom - FB configuration) | — |
| Antaramuka | Parallel | Parallel |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP (12 x 20 mm), TSOP I | 48-TSOP I |
| Kiraan Pin | 48 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | RoHS compliant (plastic TSOP-48) | Compliant (E suffix = lead-free/RoHS) |
| Product Longevity Program | No | — |
| FBGA Code | N/A | — |
| Chipset Validation | N/A | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Tegangan Pemberi Arus | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |