M29W800FT70ZA3SE vs M29W160FB70N3E Perbandingan

Perbandingan bersamaan detil M29W800FT70ZA3SE dari Micron Technology dan M29W160FB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W800FT70ZA3SE M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded

M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded

M29W800FT70ZA3SE ✓ Aktif
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W800FT70ZA3SE M29W160FB70N3E
Merek Micron Technology Micron Technology
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel) FLASH - NOR
Ukuran Memori 8 Mbit 16 Mbit (2M x8 / 1M x16)
Organisasi 512K x 16 —
Technology SLC —
Access Time 70 ns 70 ns
Antarmuka Parallel Parallel
Tegangan Pemuat 2.7 V to 3.6 V —
Suhu Kerja -40C to +125C [DATA_NEEDED: operating temperature range]
Paket 48-TFBGA (6x8 mm) —
Tipe Mounting Surface Mount Surface Mount
Programming Interface CFI command set —
Boot Block Architecture Top boot (FT = top boot block) —
Density 8 Mb —
FBGA Code [DATA_NEEDED: FBGA code] —
Chipset Validation N/A —
Status RoHS [DATA_NEEDED: RoHS status] —
Program/Erase Cycles [DATA_NEEDED: endurance] —
Supply Voltage (VCC) — 3.0 V to 3.6 V
Programming Voltage — Single supply (no separate VPP required)
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Architecture — Boot block
Paket / Case — 48-TFSOP (0.724 in, 18.40 mm width)
Packaging — Tray
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

Spek dan Sumber

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