M29W800FT70ZA3SE vs M29W160FB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W800FT70ZA3SE disebabkan oleh Micron Technology dan M29W160FB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded
M29W800FT70ZA3SE ✓ Aktif
Pengandingan Spesifikasi
| Parametr | M29W800FT70ZA3SE | M29W160FB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | FLASH - NOR |
| Saiz Ingatan | 8 Mbit | 16 Mbit (2M x8 / 1M x16) |
| Organisasi | 512K x 16 | — |
| Technology | SLC | — |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | — |
| Suhu Operasi | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 48-TFBGA (6x8 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Programming Interface | CFI command set | — |
| Boot Block Architecture | Top boot (FT = top boot block) | — |
| Density | 8 Mb | — |
| FBGA Code | [DATA_NEEDED: FBGA code] | — |
| Chipset Validation | N/A | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Supply Voltage (VCC) | — | 3.0 V to 3.6 V |
| Programming Voltage | — | Single supply (no separate VPP required) |
| Bus Configuration | — | x8 / x16 selectable (BYTE# pin) |
| Architecture | — | Boot block |
| Kemasan / Case | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tray |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Status Output | — | Data polling / toggle bit |
| Block Protection | — | Yes (boot block protection) |