MD7P19130HSR3 vs MD7P19130HR3 Perbandingan
Perbandingan bersamaan detil MD7P19130HSR3 dari NXP Semiconductors dan MD7P19130HR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MD7P19130HSR3 | MD7P19130HR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | LDMOS (Dual), Lateral N-Channel RF Power MOSFET | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Technology | NXP HV7 LDMOS | Airfast LDMOS, lateral N-channel |
| Drain-Source Voltage (VDS) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) | — |
| Power Gain | 20 dB typical at 1987.5 MHz | 20 dB (typical at Pout = 40 W) |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz | 30% (typical at Pout = 40 W, W-CDMA) |
| Quiescent Drain Current (IDQ) | 1250 mA | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical | — |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF | 7.5 dB at 0.01% CCDF |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF | — |
| Paket / Case | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged | NI-780-4 (Case 465M-01, Style 1), ceramic flange |
| Tipe Mounting | Chassis-mount (bolt-down) with ceramic lid | Surface Mount (bolt-down flange) |
| Operating Mode | Single-carrier W-CDMA, Class AB | — |
| Status RoHS | Compliant | [DATA_NEEDED: rohs status from manufacturer] |
| Typical Drain Voltage (VDD) | — | 28 V |
| Drain Voltage - Rated | — | 65 V |
| Output Power (Avg, W-CDMA) | — | 40 W |
| ACPR | — | -36 dBc at 5 MHz offset (3.84 MHz channel) |
| Output Signal PAR | — | 6 dB at 0.01% CCDF |