MPX2010D vs MPX2102D Perbandingan

Perbandingan bersamaan detil MPX2010D dari STMicroelectronics dan MPX2102D dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum MPX2010D MPX2102D
Merek STMicroelectronics NXP Semiconductors
Kategori Pressure Sensors Pressure Sensors
Status Lingkungan Hidup Aktif Obsolete
Pressure Type Differential (Port 1 vs Port 2) Differential
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) —
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Tipe Output Analog Wheatstone Bridge (mV) Wheatstone Bridge (Analog Voltage)
Output Voltage Span 0 mV to 25 mV at 10V excitation —
Sensitivity 2.5 mV/kPa (nominal, at 10V excitation) —
Excitation Voltage 10 V (typical), 16 V (maximum) —
Linearity 0.1% of full-scale (typical) —
Rentang Suhu Kerja 0 C to +85 C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
Paket / Case 4-SIP Module (Case 344-15) 4-SIP Module
Tipe Mounting Through-Hole Through Hole
Jumlah Pin 4 —
On-Chip Temperature Compensation Yes (laser trimmed) —
Bridge Configuration 4-arm piezoresistive Wheatstone —
Status RoHS [DATA_NEEDED: RoHS status from ST datasheet] —
Sensor Family MPX2010 / MPXV2010G / MPXM2010 —
Diaphragm Type Single monolithic silicon —
Operating Pressure — 14.5 PSI (100 kPa)
Tegangan Output — 0 mV to 40 mV (at 10 V supply)
Tegangan Pemuat — 10 V typical
Port Size — Female, 0.136 in (3.4544 mm)
Termination Style — Through-Hole PCB
Applications — Board Mount
Suhu Kerja — -40 C to +125 C (per NXP MPX2102 series datasheet)
Compensated Temperature — 0 C to +85 C
Housing / Body Style — Unibody Plastic (Round)
Technology — Piezoresistive Silicon MEMS
Series — MPX2102
Packaging — Tray
Product Status — Obsolete (per distributor listings)

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