MPX2010D vs MPX2102D Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MPX2010D disebabkan oleh STMicroelectronics dan MPX2102D disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr MPX2010D MPX2102D
Merek STMicroelectronics NXP Semiconductors
Kategori Pressure Sensors Pressure Sensors
Status Lingkungan Hidup Aktif Obsolete
Pressure Type Differential (Port 1 vs Port 2) Differential
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) —
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Jenis Output Analog Wheatstone Bridge (mV) Wheatstone Bridge (Analog Voltage)
Output Voltage Span 0 mV to 25 mV at 10V excitation —
Sensitivity 2.5 mV/kPa (nominal, at 10V excitation) —
Excitation Voltage 10 V (typical), 16 V (maximum) —
Linearity 0.1% of full-scale (typical) —
Gambaran Suhu Operasi 0 C to +85 C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
Kemasan / Case 4-SIP Module (Case 344-15) 4-SIP Module
Jenis Pemasangan Through-Hole Through Hole
Bilangan Pin 4 —
On-Chip Temperature Compensation Yes (laser trimmed) —
Bridge Configuration 4-arm piezoresistive Wheatstone —
Status RoHS [DATA_NEEDED: RoHS status from ST datasheet] —
Sensor Family MPX2010 / MPXV2010G / MPXM2010 —
Diaphragm Type Single monolithic silicon —
Operating Pressure — 14.5 PSI (100 kPa)
Tegangan Output — 0 mV to 40 mV (at 10 V supply)
Tegangan Pemberi Arus — 10 V typical
Port Size — Female, 0.136 in (3.4544 mm)
Termination Style — Through-Hole PCB
Applications — Board Mount
Suhu Operasi — -40 C to +125 C (per NXP MPX2102 series datasheet)
Compensated Temperature — 0 C to +85 C
Housing / Body Style — Unibody Plastic (Round)
Technology — Piezoresistive Silicon MEMS
Series — MPX2102
Packaging — Tray
Product Status — Obsolete (per distributor listings)

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