MRF7S16150HSR3 vs MRF7S21150HSR3 Perbandingan
Perbandingan bersamaan detil MRF7S16150HSR3 dari NXP Semiconductors dan MRF7S21150HSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoletePerbandingan Spesifikasi
| Parameter Umum | MRF7S16150HSR3 | MRF7S21150HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Tipe Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel LDMOS RF Power MOSFET |
| Technology | RF Power Field-Effect Transistor (HV7 process) | — |
| Drain-Source Voltage (VDS) Rated | 65 V minimum | — |
| Drain-Source Voltage (Test Condition) | 28 V typical operating | — |
| Continuous Drain Current | 1.5 A | — |
| Operating Frequency Range | 1.6 GHz to 1.66 GHz | — |
| Test Frequency | 1.6 GHz | — |
| Power Gain | 19.7 dB | 17.5 dB (typical at 2.14 GHz) |
| Output Power (Pout) | 32 W | — |
| Configuration | Single (SINGLE) | Single, push-pull final stage |
| Paket / Case | NI-780S (ceramic, metal-sealed cofired, surface mount) | — |
| Tipe Mounting | Surface Mount / bolt-down flange | Flange / bolt-down with ceramic body |
| Case Connection | SOURCE (flange tied to source) | — |
| Channel Temperature (Tch max) | [DATA_NEEDED: maximum channel temperature] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Lead / Terminal Finish | [DATA_NEEDED: lead finish / plating] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Paket | — | NI-780S (NI-780 HS variant) |
| Lead Configuration | — | High-source-leads (HS) variant |
| Operating Mode | — | Class AB / Doherty |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |