MRF7S16150HSR3 vs MRF7S21150HSR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF7S16150HSR3 disebabkan oleh NXP Semiconductors dan MRF7S21150HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoletePengandingan Spesifikasi
| Parametr | MRF7S16150HSR3 | MRF7S21150HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel LDMOS RF Power MOSFET |
| Technology | RF Power Field-Effect Transistor (HV7 process) | — |
| Drain-Source Voltage (VDS) Rated | 65 V minimum | — |
| Drain-Source Voltage (Test Condition) | 28 V typical operating | — |
| Continuous Drain Current | 1.5 A | — |
| Operating Frequency Range | 1.6 GHz to 1.66 GHz | — |
| Test Frequency | 1.6 GHz | — |
| Power Gain | 19.7 dB | 17.5 dB (typical at 2.14 GHz) |
| Output Power (Pout) | 32 W | — |
| Configuration | Single (SINGLE) | Single, push-pull final stage |
| Kemasan / Case | NI-780S (ceramic, metal-sealed cofired, surface mount) | — |
| Jenis Pemasangan | Surface Mount / bolt-down flange | Flange / bolt-down with ceramic body |
| Case Connection | SOURCE (flange tied to source) | — |
| Channel Temperature (Tch max) | [DATA_NEEDED: maximum channel temperature] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Lead / Terminal Finish | [DATA_NEEDED: lead finish / plating] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Kemasan | — | NI-780S (NI-780 HS variant) |
| Lead Configuration | — | High-source-leads (HS) variant |
| Operating Mode | — | Class AB / Doherty |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |