MRF7S16150HSR3 vs MRF7S21150HSR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF7S16150HSR3 tarafından NXP Semiconductors ve MRF7S21150HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteÖzellik Karşılaştırması
| Parametre | MRF7S16150HSR3 | MRF7S21150HSR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Obsolete |
| Transistor Türü | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel LDMOS RF Power MOSFET |
| Technology | RF Power Field-Effect Transistor (HV7 process) | — |
| Drain-Source Voltage (VDS) Rated | 65 V minimum | — |
| Drain-Source Voltage (Test Condition) | 28 V typical operating | — |
| Continuous Drain Current | 1.5 A | — |
| Operating Frequency Range | 1.6 GHz to 1.66 GHz | — |
| Test Frequency | 1.6 GHz | — |
| Power Gain | 19.7 dB | 17.5 dB (typical at 2.14 GHz) |
| Output Power (Pout) | 32 W | — |
| Configuration | Single (SINGLE) | Single, push-pull final stage |
| Paket / Kas | NI-780S (ceramic, metal-sealed cofired, surface mount) | — |
| Montaj Türü | Surface Mount / bolt-down flange | Flange / bolt-down with ceramic body |
| Case Connection | SOURCE (flange tied to source) | — |
| Channel Temperature (Tch max) | [DATA_NEEDED: maximum channel temperature] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| RoHS Durumu | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Lead / Terminal Finish | [DATA_NEEDED: lead finish / plating] | — |
| MSL Seviyesi | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Paket | — | NI-780S (NI-780 HS variant) |
| Lead Configuration | — | High-source-leads (HS) variant |
| Operating Mode | — | Class AB / Doherty |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |