MRF8S21200HSR6 vs MRF7S19120NR1 Perbandingan
Perbandingan bersamaan detil MRF8S21200HSR6 dari NXP Semiconductors dan MRF7S19120NR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF8S21200HSR6 | MRF7S19120NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V | — |
| Power Gain | 18.1 dB | — |
| Test Voltage | 28 V | — |
| Test Current (Quiescent) | 1.4 A | — |
| Minimum Breakdown Voltage (Drain-Source) | 65 V | — |
| Maximum Junction Temperature | 225 C | — |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) | — |
| Application Class | Class AB, Class C (cellular base station modulation) | — |
| Peak Reflow Temperature | 260 C | — |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements | — |
| Lead Free Status | Lead Free | Lead Free per datasheet |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Target Modulation | W-CDMA, LTE, TD-LTE | W-CDMA, CDMA, multi-carrier GSM |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (Avg, W-CDMA) | — | 36 W |
| Drain-Source Voltage (Vds max) | — | 65 V (rated) |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 1.2 A |
| Power Gain (typ) | — | 18 dB at 1.99 GHz |
| Operating Class | — | Class AB, Class C |
| Paket | — | TO-270 WB-4 (overmolded plastic, 4-lead) |
| Gaya Mounting | — | Surface Mount / Flange Mount |
| Jumlah Pin | — | 5 (per Freescale/NXP datasheet) |
| Application | — | CDMA / W-CDMA base station final-stage PA |