MRFG35010AR5 vs MRFG35010NT1 Perbandingan
Perbandingan bersamaan detil MRFG35010AR5 dari NXP Semiconductors dan MRFG35010NT1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRFG35010AR5 | MRFG35010NT1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | MOSFETs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Tipe Transistor | pHEMT GaAs RF Power FET (N-Channel) | GaAs pHEMT RF Power FET |
| Frequency | 3.55 GHz (typical), 3.4-3.8 GHz band | — |
| Drain Voltage (Vds) Rated | 15 V | — |
| Drain Current Rating | 2.9 A (pulsed) | — |
| Quiescent Drain Current (Idq) | 140 mA | — |
| Output Power (Pout) | 1 W (CW) | — |
| Power Gain | 10 dB (typical at 3.55 GHz) | — |
| Technology | GaAs pseudomorphic HEMT | — |
| Paket | NI-360HF (ceramic flange, surface mount) | — |
| Tipe Mounting | Surface Mount (with bolted heatsink) | Chassis-mount / flange-bolt |
| Operating Mode | Class AB (typical RF PA) | — |
| Configuration | Single N-channel die | Unmatched, common source |
| Status RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Frequency Range | — | 1.8 GHz to 3.6 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Class of Operation | — | Class AB linear |
| Paket / Case | — | PLD-1.5 flanged ceramic |
| Supplier Device Package | — | PLD-1.5 |
| Lead Free Status | — | Lead free (per datasheet) |