MRFG35010AR5 vs MRFG35010NT1 比較

詳細並排比較 MRFG35010AR5 由 NXP Semiconductors 與 MRFG35010NT1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRFG35010AR5 MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 ✓ 啟用中
NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete

規格比較

參數 MRFG35010AR5 MRFG35010NT1
品牌 NXP Semiconductors NXP Semiconductors
類別 Transistors MOSFETs
生命週期狀態 啟用中 Obsolete
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
電晶體類型 pHEMT GaAs RF Power FET (N-Channel) GaAs pHEMT RF Power FET
Frequency 3.55 GHz (typical), 3.4-3.8 GHz band —
Drain Voltage (Vds) Rated 15 V —
Drain Current Rating 2.9 A (pulsed) —
Quiescent Drain Current (Idq) 140 mA —
Output Power (Pout) 1 W (CW) —
Power Gain 10 dB (typical at 3.55 GHz) —
Technology GaAs pseudomorphic HEMT —
封裝 NI-360HF (ceramic flange, surface mount) —
安裝類型 Surface Mount (with bolted heatsink) Chassis-mount / flange-bolt
Operating Mode Class AB (typical RF PA) —
Configuration Single N-channel die Unmatched, common source
RoHS 狀態 [DATA_NEEDED: rohs status] [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: MSL rating] —
Part Number — MRFG35010NT1
Drain-Source Voltage Rating (Vds) — 15 V
Continuous Drain Current Rating — 2.9 A
Operating Frequency — 3.55 GHz
Frequency Range — 1.8 GHz to 3.6 GHz
Test Voltage — 12 V
Test Current (quiescent) — 180 mA
Associated Power Gain — 10 dB at 3.55 GHz
Output Power — 9 W at 3.55 GHz
Class of Operation — Class AB linear
封裝 / 外殼 — PLD-1.5 flanged ceramic
Supplier Device Package — PLD-1.5
Lead Free Status — Lead free (per datasheet)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價