MRFG35010NT1 vs MRFG35010AR5 Perbandingan
Perbandingan bersamaan detil MRFG35010NT1 dari NXP Semiconductors dan MRFG35010AR5 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRFG35010NT1 | MRFG35010AR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | Transistors |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFG35010NT1 | — |
| Tipe Transistor | GaAs pHEMT RF Power FET | pHEMT GaAs RF Power FET (N-Channel) |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | — |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | Single N-channel die |
| Class of Operation | Class AB linear | — |
| Paket / Case | PLD-1.5 flanged ceramic | — |
| Supplier Device Package | PLD-1.5 | — |
| Tipe Mounting | Chassis-mount / flange-bolt | Surface Mount (with bolted heatsink) |
| Lead Free Status | Lead free (per datasheet) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| Frequency | — | 3.55 GHz (typical), 3.4-3.8 GHz band |
| Drain Voltage (Vds) Rated | — | 15 V |
| Drain Current Rating | — | 2.9 A (pulsed) |
| Quiescent Drain Current (Idq) | — | 140 mA |
| Output Power (Pout) | — | 1 W (CW) |
| Power Gain | — | 10 dB (typical at 3.55 GHz) |
| Technology | — | GaAs pseudomorphic HEMT |
| Paket | — | NI-360HF (ceramic flange, surface mount) |
| Operating Mode | — | Class AB (typical RF PA) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |