MT40A512M16JY-075E vs H5AN8G6NAFR-RDC Perbandingan
Perbandingan bersamaan detil MT40A512M16JY-075E dari Micron Technology dan H5AN8G6NAFR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A512M16JY-075E | H5AN8G6NAFR-RDC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Laju Data | 2666 MT/s | — |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Antarmuka | Parallel | DDR4 (JEDEC-standard) |
| Paket | 96-FBGA (8x14) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Status RoHS | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Fitur | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Memory Density | — | 8 Gb |
| Tegangan Pemuat | — | 1.2 V |
| Access Mode | — | Multi Bank Page Burst |
| Package Code | — | TFBGA |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing) |
| Technology | — | CMOS |
| Speed Grade | — | -RDC (see datasheet for bin timing) |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Max Clock Rate | — | [DATA_NEEDED: max clock rate for -RDC bin] |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |