MT40A512M16JY-075E vs H5AN8G6NAFR-RDC 比較
詳細並排比較 MT40A512M16JY-075E 由 Micron Technology 與 H5AN8G6NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M16JY-075E | H5AN8G6NAFR-RDC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s | — |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| 介面 | Parallel | DDR4 (JEDEC-standard) |
| 封裝 | 96-FBGA (8x14) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| RoHS 狀態 | Compliant | Compliant (Lead-Free & Halogen-Free) |
| 功能特色 | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Memory Density | — | 8 Gb |
| 供應電壓 | — | 1.2 V |
| Access Mode | — | Multi Bank Page Burst |
| Package Code | — | TFBGA |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing) |
| Technology | — | CMOS |
| Speed Grade | — | -RDC (see datasheet for bin timing) |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Max Clock Rate | — | [DATA_NEEDED: max clock rate for -RDC bin] |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |