MT40A512M16TB-062E:J vs H5AN8G6NDJR-XNC Perbandingan
Perbandingan bersamaan detil MT40A512M16TB-062E:J dari Micron Technology dan H5AN8G6NDJR-XNC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | MT40A512M16TB-062E:J | H5AN8G6NDJR-XNC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $55,68 |
| Tipe Memori | SDRAM - DDR4 | DDR4 SDRAM |
| Ukuran Memori | 8Gbit (512M x 16) | 8 Gb |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | — |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Paket | 96-FBGA (7.5x13.5 mm) | FBGA-96 (13x7.5 mm) |
| Rentang Suhu Kerja | 0°C to 95°C | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Tipe Mounting | Surface Mount | — |
| Memory Organization | — | 512M x16 |
| Laju Data | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Bebas Halogen | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |