MT40A512M16TB-062E:J vs H5AN8G6NDJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16TB-062E:J sa pamamagitan ng Micron Technology at H5AN8G6NDJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M16TB-062E:J | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $55.68 |
| Uri ng Memory | SDRAM - DDR4 | DDR4 SDRAM |
| Laki ng Memory | 8Gbit (512M x 16) | 8 Gb |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | — |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Packhaging | 96-FBGA (7.5x13.5 mm) | FBGA-96 (13x7.5 mm) |
| Hanay ng Temperature na Operasyon | 0°C to 95°C | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Uri ng Pagpapasok | Surface Mount | — |
| Memory Organization | — | 512M x16 |
| Rate ng Data | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Wala sa Halogen | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |