MT40A512M8RH-075E:B vs K4A4G085WD-BCRC Perbandingan
Perbandingan bersamaan detil MT40A512M8RH-075E:B dari Micron Technology dan K4A4G085WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT40A512M8RH-075E:B | K4A4G085WD-BCRC |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Laju Data | 2666 MT/s (DDR4-2666) | 2400 Mb/s (PC2400) |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Tipe Antarmuka | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| Tegangan Referensi | On-die internal adjustable VREFDQ generation | — |
| Paket | 78-FBGA (9 x 10.5 mm), TFBGA | FBGA-78 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range (standard grade)] | — |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | [DATA_NEEDED: Refresh specification] |
| Speed Grade Suffix | -075E | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Memory Density | — | 4 Gbit |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 78 |
| Antarmuka | — | Parallel |
| Access Mode | — | Multi-bank page burst |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |
| Level MSL | — | [DATA_NEEDED: MSL Level] |