MT41K256M16 vs K4B4G1646E-BYMA Perbandingan
Perbandingan bersamaan detil MT41K256M16 dari Micron Technology dan K4B4G1646E-BYMA dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT41K256M16 | K4B4G1646E-BYMA |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14,32 |
| Tipe Memori | DDR3L SDRAM (1.35V) | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35 V (1.5V-compatible mode supported) | — |
| Banks | 8 | — |
| Paket | 96-ball FBGA | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Speed Grade Options | -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options] | — |
| Antarmuka | Parallel, source-synchronous DDR | — |
| On-Die Termination | Yes (ODT) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range for the full MPN suffix] | 0°C to +95°C |
| Refresh | 8K refresh cycles / 64 ms | — |
| CAS Latency Options | [DATA_NEEDED: CL options for the full MPN suffix] | — |
| Die Revision | Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs | — |
| Status RoHS | Compliant | — |
| ECCN | EAR99 | — |
| Lead Free | Yes (per DigiKey product listing) | — |
| Density | — | 4 Gb |
| Tegangan Pemuat | — | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | — | 933 MHz |
| Laju Data | — | 1866 Mbps/pin |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | [DATA_NEEDED: Burst Length] |
| Jumlah Pin | — | 96 |