SSM3K35CT-L3F vs SSM3K35CT Perbandingan

Perbandingan bersamaan detil SSM3K35CT-L3F dari Toshiba dan SSM3K35CT dari Toshiba. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum SSM3K35CT-L3F SSM3K35CT
Merek Toshiba Toshiba
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (V(DSS)) 20 V —
Gate-Source Voltage (V(GSS)) ±10 V (per datasheet, [DATA_NEEDED: exact value]) —
Continuous Drain Current (I(D)) 0.18 A (180 mA) —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS = 2.5 V] —
Power Dissipation (P_D) 500 mW (Ta) / [DATA_NEEDED: Ta condition] —
Paket SOT-883 (CST3), 3 pins SOT-883 (CST3), 3-pin leadless
Package Size 1.0 mm x 0.6 mm, max height 0.5 mm —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja [DATA_NEEDED: junction/storage temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Lead-Free Yes (L3F suffix) Yes
Status RoHS Compliant Compliant
Tape and Reel 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) —
Manufacturer Toshiba Electronic Devices & Storage Corporation —
MOSFET Mode — Enhancement
Drain-Source Breakdown Voltage (V(BR)DSS) — 20 V
Continuous Drain Current (ID) — 0.18 A
Drain-Source On-Resistance (RDS(on)) — 3.0 Ω at VGS = 4 V
Gate Threshold Voltage (Vth) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max gate-source voltage]
Power Dissipation (PD) — 100 mW (Ta)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Package Outline Code — CST3 (Toshiba internal), 2-1J1B
Level MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Application Category — High-Speed Switching / Analog Switches

Spek dan Sumber

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