STL140N4F7AG vs IRFH7084TRPBF Perbandingan

Perbandingan bersamaan detil STL140N4F7AG dari STMicroelectronics dan IRFH7084TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

STMicroelectronics
STL140N4F7AG STL140N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics

STL140N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics

STL140N4F7AG ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum STL140N4F7AG IRFH7084TRPBF
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 140 A —
On-State Resistance (RDS(on)) 3.2 mOhm @ VGS=10V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V (min) —
Total Gate Charge (Qg) 60 nC —
Input Capacitance (Ciss) 4500 pF —
Output Capacitance (Coss) 800 pF —
Reverse Transfer Capacitance (Crss) 150 pF —
Power Dissipation (PD) 150 W —
Rentang Suhu Kerja -55°C to +175°C -55°C to +175°C (TJ)
Paket PowerFLAT 5x6 8-PQFN 5x6 mm (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
AEC-Q101 Qualified Yes —
RoHS Compliant Yes —
FET Type — N-Channel
Technology — StrongIRFET™ (trench MOSFET)
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
Level MSL — 1
Status RoHS — Compliant
Bebas Halogen — Compliant
RthJC max — 0.96 °C/W (per datasheet)

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