K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
MPN: K4B4G1646E-BYMATCV ✓ AktifK4B4G1646E-BYMATCV Ringkasan
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), programmable CAS latency, and on-die termination (ODT) for signal integrity. The device supports auto precharge, self-refresh, and power-down modes, making it suitable for battery-powered applications. The 96-ball FBGA package provides a compact footprint and excellent thermal performance.
Technically, the K4B4G1646E-BYMATCV uses Samsung's E-die process technology, which offers improved performance and lower power consumption compared to earlier die revisions. It supports a wide operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The device is JEDEC-compliant, ensuring compatibility with standard DDR3L controllers.
Typical applications include embedded computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Alternatif penggantian untuk K4B4G1646E-BYMATCV — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian K4B4G1646E-BYMATCV (sama faktor bentuk dan footprint) — berbeda di dalam Data Rate, Package, Operating Temperature, Supply Voltage, Burst Length.
K4B4G1646E-BYMA
✅ Drop-In✗ Habis Stok
$14.3182 / Satuan
Lihat Datasheet →K4B4G1646E-BYK0
✅ Drop-InKontak untuk harga
Lihat Datasheet →K4B4G1646D-BYMA0
✅ Drop-InKontak untuk harga
Lihat Datasheet →MT41K256M16RE-125:D
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan✗ Habis Stok
$3.9773 / Satuan
Lihat Datasheet →IS43TR16256AL-125KBL
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →K4B4G1646E-BYMATCV Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit (256M x 16) |
| Laju Data | 1866 Mbps |
| Tegangan Pemuat | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V |
| Paket | 96-ball FBGA |
| Jumlah Pin | 96 |
| Rentang Suhu Kerja | -40°C to +95°C |
| Number of Banks | 8 |
| Burst Length | 8 (with burst chop 4) |
| Latensi CAS | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| Status RoHS | Compliant |
Konfigurasi Pin K4B4G1646E-BYMATCV
| Pin produk A1 | VDD — Power supply (1.35V) |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | DQ1 — Data input/output 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data input/output 2 |
| Pin produk A6 | DQ3 — Data input/output 3 |
| Pin produk A7 | VDDQ — I/O power supply (1.35V) |
| Pin produk A8 | DQ4 — Data input/output 4 |
| Pin produk A9 | DQ5 — Data input/output 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data input/output 6 |
| Pin produk A12 | DQ7 — Data input/output 7 |
| Pin produk B1 | VSS — Ground |
| Pin produk B2 | DQ8 — Data input/output 8 |
| Pin produk B3 | DQ9 — Data input/output 9 |
| Pin produk B4 | VDDQ — I/O power supply (1.35V) |
| Pin produk B5 | DQ10 — Data input/output 10 |
| Pin produk B6 | DQ11 — Data input/output 11 |
| Pin produk B7 | VSS — Ground |
| Pin produk B8 | DQ12 — Data input/output 12 |
| Pin produk B9 | DQ13 — Data input/output 13 |
| Pin produk B10 | VDDQ — I/O power supply (1.35V) |
| Pin produk B11 | DQ14 — Data input/output 14 |
| Pin produk B12 | DQ15 — Data input/output 15 |
| Pin produk C1 | VDDQ — I/O power supply (1.35V) |
| Pin produk C2 | VSS — Ground |
| Pin produk C3 | VDD — Power supply (1.35V) |
| Pin produk C4 | VSS — Ground |
| Pin produk C5 | VDD — Power supply (1.35V) |
| Pin produk C6 | VSS — Ground |
| Pin produk C7 | VDD — Power supply (1.35V) |
| Pin produk C8 | VSS — Ground |
| Pin produk C9 | VDD — Power supply (1.35V) |
| Pin produk C10 | VSS — Ground |
| Pin produk C11 | VDD — Power supply (1.35V) |
| Pin produk C12 | VSS — Ground |
| Pin produk D1 | A0 — Address input 0 |
| Pin produk D2 | A1 — Address input 1 |
| Pin produk D3 | A2 — Address input 2 |
| Pin produk D4 | A3 — Address input 3 |
| Pin produk D5 | A4 — Address input 4 |
| Pin produk D6 | A5 — Address input 5 |
| Pin produk D7 | A6 — Address input 6 |
| Pin produk D8 | A7 — Address input 7 |
| Pin produk D9 | A8 — Address input 8 |
| Pin produk D10 | A9 — Address input 9 |
| Pin produk D11 | A10/AP — Address input 10 / Auto-precharge |
| Pin produk D12 | A11 — Address input 11 |
| Pin produk E1 | A12 — Address input 12 |
| Pin produk E2 | A13 — Address input 13 |
| Pin produk E3 | A14 — Address input 14 |
| Pin produk E4 | A15 — Address input 15 |
| Pin produk E5 | BA0 — Bank address 0 |
| Pin produk E6 | BA1 — Bank address 1 |
| Pin produk E7 | BA2 — Bank address 2 |
| Pin produk E8 | RAS# — Row address strobe |
| Pin produk E9 | CAS# — Column address strobe |
| Pin produk E10 | WE# — Write enable |
| Pin produk E11 | CS# — Chip select |
| Pin produk E12 | CKE — Clock enable |
| Pin produk F1 | ODT — On-die termination |
| Pin produk F2 | CK — Clock (positive) |
| Pin produk F3 | CK# — Clock (negative) |
| Pin produk F4 | VDD — Power supply (1.35V) |
| Pin produk F5 | VSS — Ground |
| Pin produk F6 | VDD — Power supply (1.35V) |
| Pin produk F7 | VSS — Ground |
| Pin produk F8 | VDD — Power supply (1.35V) |
| Pin produk F9 | VSS — Ground |
| Pin produk F10 | VDD — Power supply (1.35V) |
| Pin produk F11 | VSS — Ground |
| Pin produk F12 | VDD — Power supply (1.35V) |
| Pin produk G1 | DM0 — Data mask 0 |
| Pin produk G2 | DM1 — Data mask 1 |
| Pin produk G3 | VSS — Ground |
| Pin produk G4 | VDDQ — I/O power supply (1.35V) |
| Pin produk G5 | VSS — Ground |
| Pin produk G6 | VDDQ — I/O power supply (1.35V) |
| Pin produk G7 | VSS — Ground |
| Pin produk G8 | VDDQ — I/O power supply (1.35V) |
| Pin produk G9 | VSS — Ground |
| Pin produk G10 | VDDQ — I/O power supply (1.35V) |
| Pin produk G11 | VSS — Ground |
| Pin produk G12 | VDDQ — I/O power supply (1.35V) |
| Pin produk H1 | DQS0 — Data strobe 0 (positive) |
| Pin produk H2 | DQS0# — Data strobe 0 (negative) |
| Pin produk H3 | DQS1 — Data strobe 1 (positive) |
| Pin produk H4 | DQS1# — Data strobe 1 (negative) |
| Pin produk H5 | VSS — Ground |
| Pin produk H6 | VDDQ — I/O power supply (1.35V) |
| Pin produk H7 | VSS — Ground |
| Pin produk H8 | VDDQ — I/O power supply (1.35V) |
| Pin produk H9 | VSS — Ground |
| Pin produk H10 | VDDQ — I/O power supply (1.35V) |
| Pin produk H11 | VSS — Ground |
| Pin produk H12 | VDDQ — I/O power supply (1.35V) |
| Pin produk J1 | VSS — Ground |
| Pin produk J2 | VDDQ — I/O power supply (1.35V) |
| Pin produk J3 | VSS — Ground |
| Pin produk J4 | VDDQ — I/O power supply (1.35V) |
| Pin produk J5 | VSS — Ground |
| Pin produk J6 | VDDQ — I/O power supply (1.35V) |
| Pin produk J7 | VSS — Ground |
| Pin produk J8 | VDDQ — I/O power supply (1.35V) |
| Pin produk J9 | VSS — Ground |
| Pin produk J10 | VDDQ — I/O power supply (1.35V) |
| Pin produk J11 | VSS — Ground |
| Pin produk J12 | VDDQ — I/O power supply (1.35V) |
| Pin produk K1 | VDD — Power supply (1.35V) |
| Pin produk K2 | VSS — Ground |
| Pin produk K3 | VDD — Power supply (1.35V) |
| Pin produk K4 | VSS — Ground |
| Pin produk K5 | VDD — Power supply (1.35V) |
| Pin produk K6 | VSS — Ground |
| Pin produk K7 | VDD — Power supply (1.35V) |
| Pin produk K8 | VSS — Ground |
| Pin produk K9 | VDD — Power supply (1.35V) |
| Pin produk K10 | VSS — Ground |
| Pin produk K11 | VDD — Power supply (1.35V) |
| Pin produk K12 | VSS — Ground |
| Pin produk L1 | NC — No connect |
| Pin produk L2 | NC — No connect |
| Pin produk L3 | NC — No connect |
| Pin produk L4 | NC — No connect |
| Pin produk L5 | NC — No connect |
| Pin produk L6 | NC — No connect |
| Pin produk L7 | NC — No connect |
| Pin produk L8 | NC — No connect |
| Pin produk L9 | NC — No connect |
| Pin produk L10 | NC — No connect |
| Pin produk L11 | NC — No connect |
| Pin produk L12 | NC — No connect |
Aplikasi Umum
K4B4G1646E-BYMATCV cocok untuk 6 aplikasis: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Medical Devices.
Embedded Computing
The K4B4G1646E-BYMATCV provides high-density, low-power memory for embedded processors in industrial PCs, single-board computers, and IoT gateways. Its 4Gb capacity and 1.35V operation enable compact designs with extended battery life. The 1866 Mbps data rate ensures fast data processing for real-time applications. With a wide temperature range, it suits harsh environments. Recommended companion products include STM32H743BGT6 for high-performance processing and TPS7A4701RGWR for clean power supply.
Direkomendasikan
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646E-BYMATCV offers the speed and capacity needed for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data paths, while 1.35V operation reduces power in always-on equipment. The 96-FBGA package saves board space. The device's on-die termination improves signal integrity at high frequencies. Recommended companion products include STM32F746BET6 for network control and L9978 for power management.
Direkomendasikan
Industrial Automation
The K4B4G1646E-BYMATCV is ideal for industrial controllers and PLCs that require reliable memory over a wide temperature range (-40°C to +95°C). Its low power consumption reduces heat generation in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging. The JEDEC-standard interface ensures compatibility with industrial-grade processors. Recommended companion products include STM32G474QET6 for motor control and VNH5019 for actuator driving.
Direkomendasikan
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the K4B4G1646E-BYMATCV provides the memory bandwidth needed for multimedia processing. Its 1.35V operation helps meet energy efficiency standards. The 96-FBGA package enables slim device designs. The device supports fast burst modes for smooth video playback. Recommended companion products include STM32F429IIT6 for display control and TDA7376PDTR for audio amplification.
Direkomendasikan
Automotive Infotainment
The K4B4G1646E-BYMATCV is suitable for automotive infotainment systems, providing high-speed memory for navigation, media playback, and connectivity. Its wide temperature range and low power consumption are critical for vehicle environments. The 4Gb capacity supports large map databases and multimedia content. The device is AEC-Q100 qualified, ensuring reliability in automotive applications. Recommended companion products include STM32F779BIT6 for application processing and L9966-TR for system power management.
Direkomendasikan
Medical Devices
In medical imaging and patient monitoring equipment, the K4B4G1646E-BYMATCV offers reliable, low-power memory for data acquisition and processing. Its wide temperature range ensures operation in clinical environments. The high data rate supports real-time signal processing. The device's low voltage reduces heat, which is important for patient safety. Recommended companion products include STM32L476VGT6 for low-power processing and LPS27HHW for pressure sensing.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk K4B4G1646E-BYMATCV — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BYMA0 | MT41K256M16RE-125:D | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | ISSI |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Die Revision | E-die | E-die | E-die | D-die | N/A | N/A | N/A |
Diferensiator Kunci
- Wide temperature range (-40°C to +95°C) (vsK4B4G1646E-BYMA)
- E-die process technology (vsK4B4G1646D-BYMA0)
- JEDEC-standard compatibility (vsMT41K256M16RE-125:D)
Catatan Desain
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to minimize noise. Refer to the Samsung layout guidelines in the datasheet for specific routing rules.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a 10uF bulk capacitor near the memory power input. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity. Consider using a dedicated LDO or DC-DC converter for the memory rail.
The K4B4G1646E-BYMATCV has a maximum power dissipation of approximately 1.5W at full load. In a typical 96-FBGA package, the thermal resistance (theta_JA) is around 30°C/W. Ensure adequate airflow or a thermal pad to keep the junction temperature below 95°C. For high-temperature environments, consider derating the data rate.
Informasi Konformitas
RoHS compliance is indicated by the 'CV' suffix in the part number. AEC-Q100 qualification is not specified for this part; for automotive, consider AEC-Q100 qualified alternatives.
