MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MPN： MT41K256M16RE-125:D ✓ 啟用中MT41K256M16RE-125:D 概覽
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3 and is widely used in servers, laptops, and embedded systems.
Key features include a 4Gb density, 256Mx16 organization, 1.35V supply voltage, and a CAS latency of 11 (CL11) at 1600 MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The FBGA-96 package offers excellent thermal and electrical performance, making it suitable for space-constrained designs.
Technically, the MT41K256M16RE-125:D uses Micron's advanced DRAM process technology, providing high reliability and low leakage. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity. The 1.35V operation reduces I/O power, and the 96-ball FBGA package with a 0.8mm ball pitch ensures good signal integrity.
Typical applications include DDR3L memory modules for servers, networking equipment, industrial PCs, and embedded systems. It is also used in consumer electronics like set-top boxes and routers. The low voltage and high density make it ideal for power-sensitive designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.
直接替換替代品，適用於 MT41K256M16RE-125:D — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT41K256M16RE-125:D （相同外形與佔位） — 差異在於 Package, CAS Latency, Data Rate, Memory Size, Operating Temperature.
MT41K256M16RE-15E:D
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-125:E
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16TG-125
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-125
✅ 直接替換✗ 缺貨
$6.3636 / 單位
查看資料表 →IS43TR16256A-125KBLA2
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
K4B4G1646D-BYH9
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5TC4G63CFR-PBL
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →NT5CB256M16CP-EK
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT41K256M16RE-125:D 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gb |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V |
| 資料速率 | 1600 MT/s |
| CAS 延遲 | 11 |
| 封裝 | FBGA-96 (9x14 mm) |
| 工作溫度 | 0C to +95C (TC) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Auto-Refresh | Yes |
| Self-Refresh | Yes |
| Ball Pitch | 0.8 mm |
MT41K256M16RE-125:D 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDD — Power supply (1.35V) |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VDDQ — I/O power supply (1.35V) |
| 腳位 B2 | DQ8 — Data input/output 8 |
| 腳位 B3 | DQ9 — Data input/output 9 |
| 腳位 B4 | VSSQ — I/O ground |
| 腳位 B5 | DQ10 — Data input/output 10 |
| 腳位 B6 | DQ11 — Data input/output 11 |
| 腳位 B7 | VDDQ — I/O power supply (1.35V) |
| 腳位 B8 | DQ12 — Data input/output 12 |
| 腳位 B9 | DQ13 — Data input/output 13 |
| 腳位 B10 | VSSQ — I/O ground |
| 腳位 B11 | DQ14 — Data input/output 14 |
| 腳位 B12 | DQ15 — Data input/output 15 |
典型應用
MT41K256M16RE-125:D 適用於 6 應用s: Server Memory Modules, Networking Equipment, Industrial PCs, Consumer Electronics, Embedded Systems, Data Storage Systems.
Server Memory Modules
The MT41K256M16RE-125:D is ideal for server memory modules (DIMMs) where high density and low power are critical. Its 4Gb density and 1.35V operation reduce power consumption in data centers, while the 1600 MT/s data rate provides sufficient bandwidth for server workloads. The FBGA-96 package allows for compact module designs, and the device's on-die termination improves signal integrity in multi-rank configurations.
推薦
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16RE-125:D provides high-speed packet buffering and routing table storage. Its 1600 MT/s data rate ensures low latency for data forwarding, while the 1.35V supply reduces power dissipation in always-on network devices. The device's self-refresh mode helps maintain data integrity during idle periods, and the FBGA-96 package fits well on dense PCB layouts.
推薦
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The MT41K256M16RE-125:D operates over a temperature range of 0C to +95C, making it suitable for industrial applications. Its low 1.35V operation reduces heat generation, and the FBGA-96 package provides robust solder joints. The device's auto-refresh and self-refresh features ensure data retention in power-cycled systems.
推薦
Consumer Electronics
In consumer electronics like set-top boxes and smart TVs, the MT41K256M16RE-125:D offers a balance of performance and power efficiency. Its 4Gb density supports high-definition video streaming and multitasking, while the 1.35V supply extends battery life in portable devices. The FBGA-96 package is compact, enabling slim device designs. The device's low power consumption also reduces heat, improving reliability.
推薦
Embedded Systems
Embedded systems, such as those in automotive infotainment and medical devices, benefit from the MT41K256M16RE-125:D's low power and high density. The 1.35V operation is ideal for battery-powered devices, and the 1600 MT/s data rate supports real-time processing. The FBGA-96 package is suitable for space-constrained PCBs, and the device's temperature range covers most embedded environments. Its self-refresh mode is crucial for low-power standby states.
推薦
Data Storage Systems
In data storage systems like SSDs and NAS devices, the MT41K256M16RE-125:D is used for caching and buffering. Its high density (4Gb) allows for large cache sizes, improving read/write performance. The 1.35V supply reduces power consumption in storage arrays, and the 1600 MT/s data rate ensures fast data transfer. The FBGA-96 package is compatible with standard PCB assembly processes, and the device's reliability is critical for 24/7 operation.
推薦
推薦產品摘要
工程參考資料，適用於 MT41K256M16RE-125:D — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT41K256M16RE-15E:D | MT41K256M16HA-125:E | IS43TR16256A-125KBLA2 |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Micron | Micron | Micron | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | 1333 MT/s | 1600 MT/s | 1600 MT/s |
| CAS Latency | 11 | 9 | 11 | 11 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Lower voltage operation (1.35V) compared to standard DDR3 (對比MT41K256M16TG-125)
- Higher data rate (1600 MT/s) than the -15E variant (對比MT41K256M16RE-15E:D)
- Same package and pinout as other Micron 4Gb DDR3L parts (對比MT41K256M16HA-125:E)
設計說明
Ensure a stable 1.35V supply with low ripple. Use a dedicated voltage regulator for VDD and VDDQ, and place 0.1uF and 1uF decoupling capacitors close to each power pin. The VREF should be generated from a precision divider and bypassed with 0.1uF capacitor.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines. Keep trace lengths matched within 50 mils for each byte lane. Use ground planes to minimize noise and ensure proper signal integrity.
The FBGA-96 package has a thermal resistance of approximately 20C/W. For high-temperature environments, ensure adequate airflow or a heatsink. The maximum operating temperature is 95C, so calculate the power dissipation and verify the junction temperature stays within limits.
合規資訊
RoHS compliant and lead-free per datasheet. Other compliance details not specified in the provided data.
