MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MPN: MT41K256M16RE-125:D ✓ نشطMT41K256M16RE-125:D نظرة عامة
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3 and is widely used in servers, laptops, and embedded systems.
Key features include a 4Gb density, 256Mx16 organization, 1.35V supply voltage, and a CAS latency of 11 (CL11) at 1600 MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The FBGA-96 package offers excellent thermal and electrical performance, making it suitable for space-constrained designs.
Technically, the MT41K256M16RE-125:D uses Micron's advanced DRAM process technology, providing high reliability and low leakage. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity. The 1.35V operation reduces I/O power, and the 96-ball FBGA package with a 0.8mm ball pitch ensures good signal integrity.
Typical applications include DDR3L memory modules for servers, networking equipment, industrial PCs, and embedded systems. It is also used in consumer electronics like set-top boxes and routers. The low voltage and high density make it ideal for power-sensitive designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.
بدائل مباشرة لـ MT41K256M16RE-125:D — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع MT41K256M16RE-125:D (نفس عامل الشكل والبصمة) — يختلف في Package, CAS Latency, Data Rate, Memory Size, Operating Temperature.
MT41K256M16RE-15E:D
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125:E
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16TG-125
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16256A-125KBLA2
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
K4B4G1646D-BYH9
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63CFR-PBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CB256M16CP-EK
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16RE-125:D الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gb |
| التنظيم | 256M x 16 |
| جهد التغذية | 1.35 V |
| معدل البيانات | 1600 MT/s |
| زمن الوصول CAS | 11 |
| العلبة | FBGA-96 (9x14 mm) |
| درجة حرارة التشغيل | 0C to +95C (TC) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Auto-Refresh | Yes |
| Self-Refresh | Yes |
| Ball Pitch | 0.8 mm |
تكوين أطراف MT41K256M16RE-125:D
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDD — Power supply (1.35V) |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VDDQ — I/O power supply (1.35V) |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VSSQ — I/O ground |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VDDQ — I/O power supply (1.35V) |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VSSQ — I/O ground |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
التطبيقات النموذجية
MT41K256M16RE-125:D مناسب لـ 6 التطبيقs: Server Memory Modules, Networking Equipment, Industrial PCs, Consumer Electronics, Embedded Systems, Data Storage Systems.
Server Memory Modules
The MT41K256M16RE-125:D is ideal for server memory modules (DIMMs) where high density and low power are critical. Its 4Gb density and 1.35V operation reduce power consumption in data centers, while the 1600 MT/s data rate provides sufficient bandwidth for server workloads. The FBGA-96 package allows for compact module designs, and the device's on-die termination improves signal integrity in multi-rank configurations.
موصى به
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16RE-125:D provides high-speed packet buffering and routing table storage. Its 1600 MT/s data rate ensures low latency for data forwarding, while the 1.35V supply reduces power dissipation in always-on network devices. The device's self-refresh mode helps maintain data integrity during idle periods, and the FBGA-96 package fits well on dense PCB layouts.
موصى به
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The MT41K256M16RE-125:D operates over a temperature range of 0C to +95C, making it suitable for industrial applications. Its low 1.35V operation reduces heat generation, and the FBGA-96 package provides robust solder joints. The device's auto-refresh and self-refresh features ensure data retention in power-cycled systems.
موصى به
Consumer Electronics
In consumer electronics like set-top boxes and smart TVs, the MT41K256M16RE-125:D offers a balance of performance and power efficiency. Its 4Gb density supports high-definition video streaming and multitasking, while the 1.35V supply extends battery life in portable devices. The FBGA-96 package is compact, enabling slim device designs. The device's low power consumption also reduces heat, improving reliability.
موصى به
Embedded Systems
Embedded systems, such as those in automotive infotainment and medical devices, benefit from the MT41K256M16RE-125:D's low power and high density. The 1.35V operation is ideal for battery-powered devices, and the 1600 MT/s data rate supports real-time processing. The FBGA-96 package is suitable for space-constrained PCBs, and the device's temperature range covers most embedded environments. Its self-refresh mode is crucial for low-power standby states.
موصى به
Data Storage Systems
In data storage systems like SSDs and NAS devices, the MT41K256M16RE-125:D is used for caching and buffering. Its high density (4Gb) allows for large cache sizes, improving read/write performance. The 1.35V supply reduces power consumption in storage arrays, and the 1600 MT/s data rate ensures fast data transfer. The FBGA-96 package is compatible with standard PCB assembly processes, and the device's reliability is critical for 24/7 operation.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ MT41K256M16RE-125:D — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | MT41K256M16RE-15E:D | MT41K256M16HA-125:E | IS43TR16256A-125KBLA2 |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Micron | Micron | Micron | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | 1333 MT/s | 1600 MT/s | 1600 MT/s |
| CAS Latency | 11 | 9 | 11 | 11 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- Lower voltage operation (1.35V) compared to standard DDR3 (مقابلMT41K256M16TG-125)
- Higher data rate (1600 MT/s) than the -15E variant (مقابلMT41K256M16RE-15E:D)
- Same package and pinout as other Micron 4Gb DDR3L parts (مقابلMT41K256M16HA-125:E)
ملاحظات التصميم
Ensure a stable 1.35V supply with low ripple. Use a dedicated voltage regulator for VDD and VDDQ, and place 0.1uF and 1uF decoupling capacitors close to each power pin. The VREF should be generated from a precision divider and bypassed with 0.1uF capacitor.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines. Keep trace lengths matched within 50 mils for each byte lane. Use ground planes to minimize noise and ensure proper signal integrity.
The FBGA-96 package has a thermal resistance of approximately 20C/W. For high-temperature environments, ensure adequate airflow or a heatsink. The maximum operating temperature is 95C, so calculate the power dissipation and verify the junction temperature stays within limits.
معلومات الامتثال
RoHS compliant and lead-free per datasheet. Other compliance details not specified in the provided data.
