MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
N.º da peça: MT41K256M16RE-125:D ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $6.55 | $6,55 |
| 10 | $5.9 | $59,00 |
| 100 | $5.24 | $524,00 |
| 500 | $4.72 | $2.360,00 |
| 1.000 | $4.19 | $4.190,00 |
MT41K256M16RE-125:D Visão geral
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3 and is widely used in servers, laptops, and embedded systems.
Key features include a 4Gb density, 256Mx16 organization, 1.35V supply voltage, and a CAS latency of 11 (CL11) at 1600 MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The FBGA-96 package offers excellent thermal and electrical performance, making it suitable for space-constrained designs.
Technically, the MT41K256M16RE-125:D uses Micron's advanced DRAM process technology, providing high reliability and low leakage. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity. The 1.35V operation reduces I/O power, and the 96-ball FBGA package with a 0.8mm ball pitch ensures good signal integrity.
Typical applications include DDR3L memory modules for servers, networking equipment, industrial PCs, and embedded systems. It is also used in consumer electronics like set-top boxes and routers. The low voltage and high density make it ideal for power-sensitive designs.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.
Alternativas drop-in para MT41K256M16RE-125:D — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MT41K256M16RE-125:D (mesmo formato e footprint) — diferindo em Package, CAS Latency, Data Rate, Memory Size, Operating Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT41K256M16RE-15E:D
✅ Drop-In✓ Em estoque
$7.2 / unidade
Ver ficha técnica →MT41K256M16HA-125:E
✅ Drop-In✓ Em estoque
$3.1 / unidade
Ver ficha técnica →MT41K256M16TG-125
✅ Drop-In✓ Em estoque
$7.2 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →IS43TR16256A-125KBLA2
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
K4B4G1646D-BYH9
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.3 / unidade
Ver ficha técnica →H5TC4G63CFR-PBL
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.5 / unidade
Ver ficha técnica →NT5CB256M16CP-EK
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$5.9 / unidade
Ver ficha técnica →MT41K256M16RE-125:D Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gb |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.35 V |
| Taxa de dados | 1600 MT/s |
| Latência CAS | 11 |
| Encapsulamento | FBGA-96 (9x14 mm) |
| Temperatura de operação | 0C to +95C (TC) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Auto-Refresh | Yes |
| Self-Refresh | Yes |
| Ball Pitch | 0.8 mm |
Configuração de pinos do MT41K256M16RE-125:D
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply (1.35V) |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VDDQ — I/O power supply (1.35V) |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VSSQ — I/O ground |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VDDQ — I/O power supply (1.35V) |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VSSQ — I/O ground |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
Aplicações típicas
MT41K256M16RE-125:D é adequado para 6 aplicaçãos: Server Memory Modules, Networking Equipment, Industrial PCs, Consumer Electronics, Embedded Systems, Data Storage Systems.
Server Memory Modules
The MT41K256M16RE-125:D is ideal for server memory modules (DIMMs) where high density and low power are critical. Its 4Gb density and 1.35V operation reduce power consumption in data centers, while the 1600 MT/s data rate provides sufficient bandwidth for server workloads. The FBGA-96 package allows for compact module designs, and the device's on-die termination improves signal integrity in multi-rank configurations.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16RE-125:D provides high-speed packet buffering and routing table storage. Its 1600 MT/s data rate ensures low latency for data forwarding, while the 1.35V supply reduces power dissipation in always-on network devices. The device's self-refresh mode helps maintain data integrity during idle periods, and the FBGA-96 package fits well on dense PCB layouts.
Recomendado
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The MT41K256M16RE-125:D operates over a temperature range of 0C to +95C, making it suitable for industrial applications. Its low 1.35V operation reduces heat generation, and the FBGA-96 package provides robust solder joints. The device's auto-refresh and self-refresh features ensure data retention in power-cycled systems.
Recomendado
Consumer Electronics
In consumer electronics like set-top boxes and smart TVs, the MT41K256M16RE-125:D offers a balance of performance and power efficiency. Its 4Gb density supports high-definition video streaming and multitasking, while the 1.35V supply extends battery life in portable devices. The FBGA-96 package is compact, enabling slim device designs. The device's low power consumption also reduces heat, improving reliability.
Recomendado
Embedded Systems
Embedded systems, such as those in automotive infotainment and medical devices, benefit from the MT41K256M16RE-125:D's low power and high density. The 1.35V operation is ideal for battery-powered devices, and the 1600 MT/s data rate supports real-time processing. The FBGA-96 package is suitable for space-constrained PCBs, and the device's temperature range covers most embedded environments. Its self-refresh mode is crucial for low-power standby states.
Recomendado
Data Storage Systems
In data storage systems like SSDs and NAS devices, the MT41K256M16RE-125:D is used for caching and buffering. Its high density (4Gb) allows for large cache sizes, improving read/write performance. The 1.35V supply reduces power consumption in storage arrays, and the 1600 MT/s data rate ensures fast data transfer. The FBGA-96 package is compatible with standard PCB assembly processes, and the device's reliability is critical for 24/7 operation.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT41K256M16RE-125:D — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT41K256M16RE-15E:D | MT41K256M16HA-125:E | IS43TR16256A-125KBLA2 |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Micron | Micron | Micron | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | 1333 MT/s | 1600 MT/s | 1600 MT/s |
| CAS Latency | 11 | 9 | 11 | 11 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- Lower voltage operation (1.35V) compared to standard DDR3 (vs MT41K256M16TG-125)
- Higher data rate (1600 MT/s) than the -15E variant (vs MT41K256M16RE-15E:D)
- Same package and pinout as other Micron 4Gb DDR3L parts (vs MT41K256M16HA-125:E)
Notas de projeto
Ensure a stable 1.35V supply with low ripple. Use a dedicated voltage regulator for VDD and VDDQ, and place 0.1uF and 1uF decoupling capacitors close to each power pin. The VREF should be generated from a precision divider and bypassed with 0.1uF capacitor.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines. Keep trace lengths matched within 50 mils for each byte lane. Use ground planes to minimize noise and ensure proper signal integrity.
The FBGA-96 package has a thermal resistance of approximately 20C/W. For high-temperature environments, ensure adequate airflow or a heatsink. The maximum operating temperature is 95C, so calculate the power dissipation and verify the junction temperature stays within limits.
Informações de conformidade
RoHS compliant and lead-free per datasheet. Other compliance details not specified in the provided data.
