IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA1 比較
詳細な並列比較: IPD35N10S3L26ATMA2 メーカー: Infineon および IPD70N10S312ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD35N10S3L26ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.05 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS-T | OptiMOS-T Power-Transistor |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A | 70 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm | — |
| Power Dissipation (Ptot, Tc) | 71 W | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: gate threshold typical/range] | — |
| 動作温度範囲 | [DATA_NEEDED: Tj min/max] | — |
| パッケージ | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| ピン数 | 3 (Drain, Source, Gate + tab) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | Trench MOSFET (OptiMOS-T) | — |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | MSL1 (up to 260 °C peak reflow) |
| Part Number | — | IPD70N10S312ATMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | — | 65 nC @ 10 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |