IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA1 Comparison
Detailed side-by-side comparison of IPD35N10S3L26ATMA2 by Infineon and IPD70N10S312ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA2 β ActiveSpecification Comparison
| Parameter | IPD35N10S3L26ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS-T | OptiMOS-T Power-Transistor |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A | 70 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm | β |
| Power Dissipation (Ptot, Tc) | 71 W | β |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: gate threshold typical/range] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Pin Count | 3 (Drain, Source, Gate + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | Trench MOSFET (OptiMOS-T) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (up to 260 Β°C peak reflow) |
| Part Number | β | IPD70N10S312ATMA1 |
| FET Type | β | N-Channel, Enhancement Mode |
| Pulsed Drain Current (IDM) | β | 180 A |
| Power Dissipation (PD, Tc) | β | 125 W |
| On-State Resistance (RDS(on)) | β | 11.1 mΞ© @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | β | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | β | 65 nC @ 10 V |
| Operating Temperature (TJ) | β | -55 Β°C to +175 Β°C |
| Avalanche Tested | β | 100 % (per datasheet) |
| RoHS Compliance | β | Green product, RoHS compliant |