IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA1 对比
详细并排对比 IPD35N10S3L26ATMA2 出自 Infineon 和 IPD70N10S312ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD35N10S3L26ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS-T | OptiMOS-T Power-Transistor |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A | 70 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm | — |
| Power Dissipation (Ptot, Tc) | 71 W | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: gate threshold typical/range] | — |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | — |
| 封装 | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| 引脚数量 | 3 (Drain, Source, Gate + tab) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | Trench MOSFET (OptiMOS-T) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | MSL1 (up to 260 °C peak reflow) |
| Part Number | — | IPD70N10S312ATMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | — | 65 nC @ 10 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |