2EDL5023U2DXTMA1 - 120V Boot, 3A Half-Bridge Gate Driver | Infineon
部品番号: 2EDL5023U2DXTMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.85 | $185.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.4 | $1,400.00 |
2EDL5023U2DXTMA1 概要
A gate driver IC is a power management semiconductor that sits between a low-power control circuit (such as a microcontroller or PWM controller) and the power MOSFETs, IGBTs, or GaN switches in a switching power converter. By providing high peak current and level-shifting the control signal to the high-side switch referenced to the switching node (SW), gate drivers allow low-voltage controllers to operate power devices stacked in half-bridge or full-bridge topologies. The 2EDL5023U2DXTMA1 belongs to the half-bridge driver category within the broader gate-driver hierarchy: half-bridge driver > gate driver > power management IC > semiconductor.
Key features of the 2EDL5023U2DXTMA1 include 120 V bootstrap voltage rating supporting high-side operation up to 100 V bus rails, integrated bootstrap diode architecture (U2 family), under-voltage lockout (UVLO) on VDD, 3 A typical peak gate drive capability, and matched propagation delay between the high-side and low-side channels to prevent duty-cycle distortion. The PG-TSNP-12-5 package provides a small footprint suitable for space-constrained PCB designs, while the exposed pad supports thermal dissipation of internal driver losses.
The device uses Infineon's proven high-voltage level-shifter technology with integrated bootstrap diode, eliminating the need for an external bootstrap diode in most applications. The EN pin allows external shutdown for low quiescent current standby, important for battery-powered and energy-conscious designs. TTL-compatible inputs allow direct interfacing with 3.3 V or 5 V microcontrollers without level translation.
Typical applications include driving the high-side and low-side MOSFETs in buck, boost, and half-bridge DC-DC converters, motor driver half-bridges up to 100 V bus, Class-D audio amplifier output stages, and primary-side driven switch-mode power supplies. The 3 A peak current and 120 V bootstrap rating make this part particularly suited for higher-power synchronous rectification stages.
When designing with the 2EDL5023U2DXTMA1, ensure that the bootstrap capacitor value is sized for the gate charge requirement and switching frequency of the driven MOSFET, with a 100 nF to 1 uF ceramic typically sufficient. Place the driver close to the driven power switches to minimize gate-loop inductance and avoid ground bounce by using a low-impedance VSS return. A TVS or snubber on the switching node may be required in motor-drive applications with high dV/dt.
This page synthesizes distributor pricing, parametric comparison, and design notes that complement the Infineon datasheet to accelerate component selection and PCB implementation.
ドロップイン代替品: 2EDL5023U2DXTMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 2EDL5023U2DXTMA1 （同一形状・フットプリント） — 相違点: Package, Isolation Type, Product Type, Number of Channels, Driver Configuration.
クイック比較ツール — 並列比較する代替部品を選択:
2EDL5023U2D
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2EDL6014ACG2DXTMA1
✅ ドロップイン✓ 在庫あり
$1.18 / 個
データシートを見る →2EDN7434RXTMA1
✅ ドロップイン✓ 在庫あり
$0.34 / 個
データシートを見る →2EDL8124GXUMA1
✅ ドロップイン✓ 在庫あり
$0.98 / 個
データシートを見る →2EDL5023U2DXTMA1 最大定格＆電気的特性
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Driver Type | Non-Inverting |
| 出力数 | 2 |
| Bootstrap Voltage Rating | 120 V |
| Peak Gate Drive Current | 3 A (typical sink/source) |
| Number of Channels | 1 (Half-Bridge) |
| Input Logic | TTL-compatible |
| Input Voltage (VDD) | 5 V (gate drive supply) |
| Enable Pin (EN) | Active-High (logic high or left open enables) |
| PWM Inputs | HI (high-side), LI (low-side) |
| Ground Return | VSS |
| パッケージ | PG-TSNP-12-5 |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +125C (typical industrial range) |
| RoHS ステータス | Compliant |
| Tape and Reel Packaging | Yes |
2EDL5023U2DXTMA1 ピン構成
| ピン 1 | SW — Switching node (high-side source / low-side drain reference) |
| ピン 2 | HB — High-side bootstrap supply (floating supply for high-side driver) |
| ピン 3 | NC — Not connected (per datasheet) |
| ピン 4 | NC — Not connected (per datasheet) |
| ピン 5 | NC — Not connected (per datasheet) |
| ピン 6 | NC — Not connected (per datasheet) |
| ピン 7 | NC — Not connected (per datasheet) |
| ピン 8 | EN — Enable input (logic high or left-open enables; logic low disables) |
| ピン 9 | HI — High-side PWM input (TTL-compatible) |
| ピン 10 | LI — Low-side PWM input (TTL-compatible) |
| ピン 11 | VDD — 5 V gate drive supply |
| ピン 12 | VSS — Ground return |
主な用途
2EDL5023U2DXTMA1 の用途: 6 件s: Synchronous Buck DC-DC Converter, Half-Bridge Motor Driver, Class-D Audio Amplifier Output Stage, Primary-Side Switch-Mode Power Supply (SMPS), Solar Micro-Inverter MPPT Stage, Telecom 48V Point-of-Load (POL) Converter.
Synchronous Buck DC-DC Converter
The 2EDL5023U2DXTMA1 drives the high-side and low-side MOSFETs in a synchronous buck converter, where its 120 V bootstrap rating supports input rails up to 100 V and its 3 A peak current enables fast switching of mid-current MOSFETs. According to the Infineon datasheet, the matched propagation delay between HI and LI channels prevents duty-cycle distortion at high switching frequencies. Compared to discrete bootstrap designs, the integrated bootstrap diode eliminates one external component and reduces PCB area. The 5 V VDD supply is typically derived from a small auxiliary linear regulator.
おすすめ
Half-Bridge Motor Driver
The 2EDL5023U2DXTMA1 drives one half-bridge leg of a brushless DC (BLDC) or permanent-magnet synchronous motor (PMSM) inverter up to 100 V bus. According to the Infineon datasheet, the 3 A peak gate current and 120 V bootstrap rating cover small industrial pumps, fans, e-bike traction, and 48 V mild-hybrid auxiliary drives. The EN pin enables external fault-driven shutdown. A snubber or TVS on the switching node is recommended to clamp inductive voltage spikes above the bootstrap rating.
おすすめ
Class-D Audio Amplifier Output Stage
In Class-D audio amplifiers, the 2EDL5023U2DXTMA1 drives the complementary half-bridge output MOSFETs that switch at audio frequencies (20 Hz to 500 kHz PWM). According to the Infineon datasheet, the matched propagation delay preserves audio fidelity by preventing DC offset on the output filter, and the 3 A drive capability supports the fast edges needed for high-efficiency switching of low-Qg MOSFETs. The TTL-compatible HI/LI inputs accept audio-modulated PWM directly from a digital modulator IC.
おすすめ
Primary-Side Switch-Mode Power Supply (SMPS)
The 2EDL5023U2DXTMA1 drives the primary-side high-side and low-side MOSFETs in isolated half-bridge or push-pull SMPS topologies, where its 120 V bootstrap rating covers 48 V telecom and industrial bus rails. According to the Infineon datasheet, the integrated bootstrap diode simplifies PCB layout and the EN pin enables synchronized startup with the controller. Typical applications include 48 V to 12 V intermediate bus converters, telecom secondary-side rectifiers, and industrial DIN-rail power supplies.
おすすめ
Solar Micro-Inverter MPPT Stage
In solar micro-inverters and MPPT charge controllers, the 2EDL5023U2DXTMA1 drives the half-bridge power stage that converts PV panel output to battery or grid voltage. According to the Infineon datasheet, the 120 V bootstrap rating handles up to 100 V open-circuit panel strings, and the 3 A drive current supports mid-power MOSFETs (under 200 nC total gate charge). The EN pin enables low-power shutdown during night-time standby, critical for solar energy harvesting efficiency.
おすすめ
Telecom 48V Point-of-Load (POL) Converter
The 2EDL5023U2DXTMA1 drives the synchronous rectifier stage in 48 V telecom intermediate bus converters (IBC) stepping down to 12 V or 5 V POL rails. According to the Infineon datasheet, the 120 V bootstrap supports 48 V nominal with full transient margin, and the 3 A drive enables switching frequencies above 200 kHz for compact magnetics. The TTL-compatible inputs accept digital PWM from a digital controller or DSP, supporting adaptive voltage scaling for energy-efficient telecom infrastructure.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2EDL5023U2DXTMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 2EDL5023U2D | 2EDL6014ACG2DXTMA1 | 2EDN7434RXTMA1 | 2EDL8124GXUMA1 | IRS2004STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Package | PG-TSNP-12-5 | PG-TSNP-12-5 (same) | PG-TSNP-12-5 (same) | PG-TSNP-12-5 (same) | PG-TSNP-12-5 (same) | SOIC-8 (different) |
| Topology | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Dual Low-Side | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) |
| Bootstrap Voltage Rating | 120 V | 120 V | 600 V | N/A (low-side only) | 120 V | 200 V |
| Peak Gate Drive Current | 3 A | 3 A | 4 A | 4 A | 5 A | 0.6 A |
| Gate Drive Supply (VDD) | 5 V | 5 V | 5 V | 5 V | 5 V | 10-20 V |
| Enable Pin | Yes (active-high) | Yes (active-high) | Yes (active-high) | Yes (active-high) | Yes (active-high) | Yes (active-high) |
| Integrated Bootstrap Diode | Yes | Yes | Yes | N/A | Yes | No |
| Logic Compatibility | TTL | TTL | TTL | TTL | TTL | CMOS/TTL |
主な差別化要因
- 120 V bootstrap with integrated bootstrap diode （vs IRS2004STRPBF)
- 3 A peak gate drive current in compact PG-TSNP-12-5 （vs 2EDN7434RXTMA1)
- 120 V bootstrap optimized for 48-100 V bus applications （vs 2EDL6014ACG2DXTMA1)
設計ノート
The bootstrap capacitor (CBOOT) on pin HB must be sized to hold sufficient charge for one full switching cycle. Estimated: for Qg_total of 50 nC and switching frequency 100 kHz, CBOOT >= Qg_total / dV ~= 50nC / 0.1V = 0.5 uF minimum. According to the Infineon datasheet, 100 nF to 1 uF X7R ceramic is typical; ensure the bootstrap diode refreshes CBOOT within the low-side on-time. Add a small ceramic bypass (10-100 nF) on VDD close to the IC.
Place the 2EDL5023U2DXTMA1 within 5-10 mm of the power MOSFETs it drives to minimize gate-loop inductance. Use a wide, short gate trace and a ground return path directly to the VSS pin, avoiding sharing the ground return with high-current switching loops. According to the Infineon datasheet, the exposed thermal pad must be soldered to a copper pour to provide adequate thermal dissipation of internal driver losses.
Do not exceed the 120 V bootstrap voltage rating on pin HB - even brief overvoltage transients from inductive load switching can permanently damage the high-side level-shifter. According to the Infineon datasheet, add a TVS diode or RC snubber on the switching node (pin SW) to clamp transients. Also ensure the EN pin is not left floating if not used; tie it to VDD through a 10 kohm resistor if a controller does not drive it directly.
コンプライアンス情報
Standard grade part per Infineon datasheet. Not AEC-Q100 qualified - for automotive applications, consult Infineon for AEC-Q100 qualified variants of the 2EDL family. RoHS and REACH compliant.
