BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
部品番号: BSC035N04LSGATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 5,000 | $0.48 | $2,400.00 |
BSC035N04LSGATMA1 概要
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate electrical energy. The N-channel variant conducts when a positive gate-source voltage is applied, and the 40 V class sits in the sweet spot for low-voltage, high-current systems: 12 V and 24 V rails, USB Power Delivery, motor drives, and synchronous rectification in switched-mode power supplies. Within the power MOSFET family, low-voltage trench MOSFETs like this one sit below 100 V MOSFETs and far below IGBTs, and they dominate wherever switching frequency, RDS(on), and thermal performance matter more than blocking voltage.
Key features include 3.5 mΩ maximum RDS(on) at VGS=10 V, 100 A continuous drain current at case temperature, 2.5 W power dissipation at TA=25°C rising to 69 W at Tc=25°C, and an operating junction temperature range of -55°C to +150°C. The PG-TDSON-8-1 package with exposed drain pad keeps the junction-to-case thermal resistance low, which is critical because the device can dissipate tens of watts in synchronous rectification or hot-swap roles.
The device uses Infineon's third-generation OptiMOS trench process, which integrates a Schottky-like monolithically integrated body diode option on later variants and offers very low gate charge (Qg) for fast switching. The result is a part that delivers high efficiency at high switching frequencies in SMPS, BLDC motor drives, and battery protection circuits. Typical gate threshold is around 1.7 V, with the device fully enhanced at 10 V VGS.
Typical applications include synchronous rectification in 12 V DC-DC buck converters, hot-swap and OR-ing controllers on 24 V industrial backplanes, eFuse and battery protection in 4S-8S lithium packs, BLDC motor drive low-side switches, and USB PD load switches. The PG-TDSON-8-1 footprint is widely accepted by Infineon's reference designs and most third-party power-conversion evaluation boards.
When designing with the BSC035N04LSGATMA1, ensure the gate drive swings to 10 V for full enhancement, place the gate resistor close to the IC to control ringing, and provide sufficient copper area on the drain pad for thermal dissipation. Because of its low RDS(on), this part is preferred where conduction losses dominate; if switching losses dominate at very high frequencies, consider Infineon's newer OptiMOS 5 40 V family instead. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: BSC035N04LSGATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: BSC035N04LSGATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Series.
クイック比較ツール — 並列比較する代替部品を選択:
BSC059N04LSGATMA1
✅ ドロップイン✓ 在庫あり
$0.39 / 個
データシートを見る →BSC042N04NSG
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC038N04NSG
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NTMFS4841N
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SiRA52DP
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC035N04LSGATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | 21 A |
| RDS(on) Max at VGS=10V | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | 69 W |
| 動作接合温度 | -55°C to +150°C |
| 実装タイプ | Surface Mount |
| パッケージ | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
BSC035N04LSGATMA1 ピン構成
| ピン 1 | Gate (G) — Gate drive input; apply 10 V for full enhancement |
| ピン 2 | Source (S) — Source connection |
| ピン 3 | Source (S) — Source connection |
| ピン 4 | Source (S) — Source connection |
| ピン 5 | Source (S) — Source connection |
| ピン 6 | Source (S) — Source connection |
| ピン 7 | Source (S) — Source connection |
| ピン 8 | Drain (D) — Drain connection; also electrically tied to exposed pad |
| ピン EP | Exposed Pad (Drain) — Drain connection - primary thermal dissipation path, must be soldered to PCB copper |
安全動作領域 (SOA) - BSC035N04LSGATMA1
主な用途
BSC035N04LSGATMA1 の用途: 6 件s: 12V Synchronous Rectification in DC-DC Buck Converters, 24V Industrial Hot-Swap and OR-ing Controllers, Battery Protection in Multi-Cell Lithium Packs (4S-8S), BLDC Motor Drive Low-Side Switch, USB Power Delivery (PD) Load Switch, eFuse and Solid-State Circuit Breaker.
12V Synchronous Rectification in DC-DC Buck Converters
The BSC035N04LSGATMA1 excels as the low-side synchronous rectifier in 12 V buck converters powering servers, GPUs, and telecom bricks. Its 3.5 mΩ RDS(on) at VGS=10 V keeps conduction loss under 1% at 25 A output, while the OptiMOS 3 gate-charge profile allows 500 kHz switching with acceptable crossover loss. Placed on the ground-referenced low-side with 10 V gate drive from a bootstrap or dedicated charge pump, it outperforms older 5 mΩ parts by 1-2 percentage points in efficiency. Unlike a Schottky diode, the synchronous MOSFET eliminates reverse-recovery loss but requires careful dead-time control to avoid shoot-through at the switching node.
おすすめ
24V Industrial Hot-Swap and OR-ing Controllers
In 24 V industrial backplanes, the BSC035N04LSGATMA1 serves as the main pass MOSFET in hot-swap and OR-ing circuits where inrush current and back-feed prevention are critical. Its 40 V VDS rating provides 16 V of margin above a 24 V nominal rail, comfortably handling transients and load-dump events. The 100 A continuous rating supports high-power compute and storage shelves, while 3.5 mΩ RDS(on) keeps voltage drop under 70 mV at 20 A. A dedicated hot-swap controller monitors VDS for current-limit foldback, and the PG-TDSON-8-1 exposed pad dissipates fault-mode heat directly into the chassis copper.
おすすめ
Battery Protection in Multi-Cell Lithium Packs (4S-8S)
For 4S to 8S lithium battery packs (14.4 V to 33.6 V nominal), the BSC035N04LSGATMA1 sits within the safe operating area as the charge/discharge MOSFET or secondary protection switch. Its 40 V VDS handles a fully charged 8S pack plus transient overshoot, and the 100 A continuous rating supports high-discharge e-mobility and power-tool packs. The 3.5 mΩ RDS(on) reduces heat generation during 30 A continuous discharge, allowing compact PCB layouts without bulky heatsinks. Compared to dual-MOSFET back-to-back configurations, single MOSFETs with a battery monitor IC simplify the BOM and reduce conduction path resistance by 50%.
おすすめ
BLDC Motor Drive Low-Side Switch
In 12 V to 24 V BLDC motor drives for e-bikes, drones, and power tools, the BSC035N04LSGATMA1 functions as the low-side switch in a three-phase inverter leg. At 3.5 mΩ RDS(on) and 100 A continuous, it handles peak motor currents of 60-80 A without thermal runaway. The OptiMOS 3 process provides a robust body diode with acceptable reverse-recovery for trapezoidal commutation, though for sinusoidal FOC drives below 20 kHz, an external Schottky anti-parallel diode is recommended. The PG-TDSON-8-1 footprint is compatible with most gate-driver reference designs.
おすすめ
USB Power Delivery (PD) Load Switch
The BSC035N04LSGATMA1 works as the high-current load switch in 100 W USB PD 3.1 EPR sinks and sources, where 28 V/36 V/40 V negotiation profiles are supported. Its 40 V VDS rating covers the 28 V PD profile plus margin, while 3.5 mΩ RDS(on) at 5 A keeps voltage drop below 18 mV - critical for tight PD voltage tolerance. The PG-TDSON-8-1 footprint allows PCB placement directly behind the USB-C connector for shortest current loop. Pairing with a dedicated USB PD controller enables programmable current limit and OVP/UVP protection.
おすすめ
eFuse and Solid-State Circuit Breaker
The BSC035N04LSGATMA1 acts as the main pass element in solid-state circuit breakers and eFuse modules for 12 V and 24 V distribution in automotive and industrial systems. Its 100 A continuous rating supports high-current distribution, while 3.5 mΩ RDS(on) maintains efficiency during normal operation. Under fault conditions, the controller detects an overcurrent event and turns off the gate within microseconds - far faster than mechanical breakers. The 40 V VDS handles inductive kickback from motors and solenoids. AEC-Q100 grade variants are available from Infineon for automotive-grade designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: BSC035N04LSGATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | BSC059N04LSGATMA1 | BSC042N04NSG | BSC038N04NSG | NTMFS4841N | SiRA52DP |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | SO-8FL - same footprint family | PowerPAK SO-8 - same footprint family |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID at Tc=25°C) | 100 A | 85 A | 100 A | 100 A | 89 A | 60 A |
| RDS(on) Max at VGS=10V | 3.5 mΩ | 5.9 mΩ (+69%) | 4.2 mΩ (+20%) | 3.8 mΩ (+9%) | 4.5 mΩ (+29%) | 5.0 mΩ (+43%) |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | onsemi Trench | Vishay TrenchFET Gen IV |
| Power Dissipation at Tc=25°C | 69 W | 63 W | 69 W | 69 W | 53 W | 50 W |
| Approx. Unit Price (qty 1000, USD) | $0.61 | $0.55 | $0.68 | $0.72 | $0.58 | $0.65 |
主な差別化要因
- Lowest RDS(on) in its OptiMOS 3 40 V class （vs BSC059N04LSGATMA1)
- Mature, widely-stocked OptiMOS 3 process （vs BSC042N04NSG (OptiMOS 5))
- Higher continuous current rating than cross-brand alternatives （vs NTMFS4841N (onsemi))
設計ノート
Estimated thermal analysis: at 30 A continuous drain current with 3.5 mΩ RDS(on), the BSC035N04LSGATMA1 dissipates about 3.15 W. Using a 1 square inch 2 oz copper pour on the drain pad, theta_JA is approximately 50 C/W, giving a junction temperature rise of 158°C above ambient - exceeding the 150°C maximum. Therefore, at currents above 25 A, use a 4+ square inch copper pour, a dedicated thermal via array, or attach a small heatsink to keep Tj under 125°C. Always verify with the datasheet's thermal impedance curves for your specific PCB layout.
Place the gate resistor (typically 10-47 Ω) within 5 mm of the gate pin to dampen parasitic oscillation caused by the gate-source capacitance and source-lead inductance. Keep the high-current drain loop area minimal by routing drain and source planes on adjacent layers. The PG-TDSON-8-1 exposed pad must be soldered to a copper pour with at least 4 thermal vias (0.3 mm diameter) connecting to inner plane layers for effective heat extraction.
Do not exceed VGS of ±20 V absolute maximum, even briefly during gate-driver transients - the thin gate oxide can be permanently damaged. Ensure the gate drive voltage reaches at least 10 V for full enhancement; driving at 5 V (logic level) dramatically increases RDS(on) and conduction loss. For switching applications above 100 kHz, add a small external Schottky anti-parallel diode to prevent body-diode reverse-recovery losses from degrading efficiency.
コンプライアンス情報
RoHS compliant per Infineon product page; lead-free finish indicated by ATMA1 suffix; standard industrial grade (not AEC-Q100 qualified - Infineon offers separate automotive-grade variants for that purpose).
