IR2117SPBF - 600V High-Side Gate Driver IC, 8-SOIC | Infineon
部品番号: IR2117SPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.78 | $178.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.21 | $1,210.00 |
IR2117SPBF 概要
A high-side gate driver IC is a specialized interface between low-voltage control logic (microcontroller, DSP, or PWM controller) and a power MOSFET or IGBT whose source/emitter is floating and switching between ground and the high-voltage bus. It translates a low-current logic signal into the high-current gate charge pulses required to switch a power transistor in nanoseconds, while providing the level-shifting and isolation needed to drive a transistor whose reference terminal is at the high-voltage rail. In the system hierarchy, the IR2117SPBF sits between the digital controller (PWM IC) and the power stage (MOSFET/IGBT), a critical link in any half-bridge, full-bridge, or push-pull power converter.
Key features of the IR2117SPBF include gate drive supply range from 10 V to 20 V, undervoltage lockout (UVLO) for safe startup, CMOS Schmitt-triggered inputs with internal pull-down, and dV/dt immunity. The floating channel tolerates negative transient voltages, enabling reliable operation in hard-switched inductive applications. The non-inverting single-input logic interface simplifies microcontroller connections, while the matched propagation delays help preserve switching symmetry in high-frequency designs.
Architecturally, the IR2117SPBF integrates a level-shifter, high-voltage bootstrap diode structure, and a high-pulse-current output buffer stage designed for minimum cross-conduction. The asymmetric source/sink rating (0.25 A source, 0.5 A sink) accelerates turn-off to minimize switching losses, which is particularly valuable in motor drive and SMPS applications where turn-off losses dominate.
Typical applications include high-side switch driving in motor control (small BLDC fans, pumps), switch-mode power supplies (SMPS) with synchronous rectification, half-bridge and full-bridge converters, electronic ballasts for lighting, and solenoid/relay drivers. The 600 V rating comfortably supports 240 V AC and 400 V DC bus systems.
When designing with the IR2117SPBF, pay close attention to the bootstrap capacitor sizing - insufficient capacitance causes excessive ripple on the floating supply and can trigger UVLO under heavy loads. Place the bootstrap diode and capacitor as close to the IC pins as possible to minimize parasitic inductance, and always respect the maximum VBS of 20 V.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: IR2117SPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IR2117SPBF （同一形状・フットプリント） — 相違点: Configuration, Package, RoHS Status, Driver Type, Fall Time.
クイック比較ツール — 並列比較する代替部品を選択:
IR2117STRPBF
✅ ドロップイン✓ 在庫あり
$0.58 / 個
データシートを見る →IR2118SPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IR2109SPBF
✅ ドロップイン✓ 在庫あり
$1.05 / 個
データシートを見る →IR2128SPBF
✅ ドロップイン✓ 在庫あり
$1.62 / 個
データシートを見る →NCP5106BDR2G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IR2117SPBF 最大定格＆電気的特性
| Configuration | Single high-side driver |
| Driver Type | High-side gate driver (non-inverting) |
| Number of Drivers | 1 |
| Maximum Offset (Bootstrap) Voltage | 600 V |
| Output Current (Source, typ.) | 0.25 A |
| Output Current (Sink, typ.) | 0.5 A |
| Gate Drive Supply Voltage (VBS) | 10 V to 20 V |
| Input Type | CMOS Schmitt-triggered with internal pull-down |
| Logic Input Polarity | Non-inverting |
| Undervoltage Lockout (UVLO) | Yes |
| Bootstrap Operation | Yes (floating channel) |
| dV/dt Immunity | Yes |
| Negative Transient Tolerance | Yes |
| パッケージ | 8-SOIC (SOIC-8) |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +125C |
| RoHS ステータス | Compliant (PbF suffix) |
| Lead Finish | Lead-free (PbF) |
| Family | IR2117 / IR2118 series |
IR2117SPBF ピン構成
| ピン 1 | VCC — Logic supply voltage (low-side) |
| ピン 2 | IN — Logic input (non-inverting, CMOS Schmitt-triggered with pull-down) |
| ピン 3 | GND — Logic ground (low-side return) |
| ピン 4 | NC — Not connected (no internal connection) |
| ピン 5 | VS — Floating supply return (high-side reference) |
| ピン 6 | VB — Bootstrap supply voltage (high-side floating rail) |
| ピン 7 | HO — High-side gate driver output |
| ピン 8 | NC — Not connected (no internal connection) |
主な用途
IR2117SPBF の用途: 6 件s: High-Side Switch for 240V AC Industrial Loads, Switch-Mode Power Supply (SMPS) Synchronous Rectifier Driver, Brushless DC (BLDC) Motor Drive - High-Side PWM, Electronic Ballast for HID / Fluorescent Lighting, Solenoid and Relay Coil Driver (24V / 48V Industrial), Solar Inverter - DC Side Disconnect Switch.
High-Side Switch for 240V AC Industrial Loads
The IR2117SPBF's 600 V maximum offset voltage directly supports 240 V AC line-powered industrial loads (e.g., solenoids, relays, motor windings) where the load sits between the line and ground. With 0.25 A source / 0.5 A sink output, the IR2117SPBF can switch most IGBTs and MOSFETs in the 5 A to 30 A class within 100-200 ns, keeping switching losses low. Place a 1 uF bootstrap capacitor between VB and VS, with a high-speed diode from VCC to VB, and the IR2117SPBF will reliably level-shift the logic signal to drive an N-channel MOSFET in the high side. Compared with a low-side switch, the high-side topology eliminates ground-referenced load return paths and enables true load-disconnect for safety-critical applications. The asymmetric sink rating accelerates turn-off to minimize shoot-through risk in half-bridge follow-on stages.
おすすめ
Switch-Mode Power Supply (SMPS) Synchronous Rectifier Driver
In isolated and non-isolated SMPS topologies such as flyback, forward, and active-clamp converters, the IR2117SPBF drives the synchronous rectifier MOSFET on the high side of the secondary winding, eliminating the diode drop and improving efficiency by 2-5%. The 600 V rating covers universal-input (85-265 VAC) designs after the input PFC stage, while the 10-20 V VBS range supports standard 12 V gate-drive rails. Bootstrap operation allows the IR2117SPBF to operate from a single low-side supply with just one external diode and capacitor, simplifying the BOM. Compared to a pulse transformer, the IR2117SPBF solution offers tighter timing control and lower cost. Ensure the bootstrap capacitor is sized for at least 10x the MOSFET gate charge to avoid VBS droop during the longest on-time.
おすすめ
Brushless DC (BLDC) Motor Drive - High-Side PWM
The IR2117SPBF is well-suited to drive the high-side FET in a BLDC motor drive where each phase requires individual high-side PWM control. With 0.5 A sink current, the IR2117SPBF achieves fast turn-off, which reduces deadtime and improves torque ripple at high PWM frequencies. The 600 V rating supports 230 VAC three-phase input after rectification, common in industrial pumps, fans, and small EV traction drives. Combined with a complementary low-side driver (e.g., a gate-driver array or discrete NPN/PNP), the IR2117SPBF enables a complete three-phase inverter using three drivers and six MOSFETs. For lower-voltage battery applications (12-48 V), the IR2117SPBF is over-specified but still functional, with the wide VBS range ensuring compatibility with 10 V gate-drive designs.
おすすめ
Electronic Ballast for HID / Fluorescent Lighting
In electronic ballasts for fluorescent and HID lamps, the IR2117SPBF drives the high-side switch of the resonant half-bridge inverter that produces the high-frequency AC current required to strike and sustain the lamp arc. The IR2117SPBF's dV/dt immunity is critical here because the half-bridge switching node transitions at high dV/dt (typically 1-5 V/ns) - without this immunity, the driver could latch up. The floating channel tolerates the negative transients that occur during lamp strike, when the resonant tank produces voltage spikes beyond the DC bus. Bootstrap operation means only one supply rail is needed, simplifying the ballast's power supply design. Compared to a pulse transformer, the IR2117SPBF solution provides faster switching and better dimming response.
おすすめ
Solenoid and Relay Coil Driver (24V / 48V Industrial)
The IR2117SPBF drives the high-side switch controlling a 24 V or 48 V solenoid or relay coil, where the load sits between the supply rail and ground. With 0.25 A source / 0.5 A sink capability, it can switch most small to medium MOSFETs and IGBTs directly, supporting coils up to several amperes. The IR2117SPBF's CMOS Schmitt-triggered input with internal pull-down eliminates the need for an external pull-down resistor, simplifying PCB layout and reducing BOM count. The 600 V rating provides massive design margin for 24/48 V systems, ensuring long-term reliability against inductive transients. For PWM-proportional control of solenoid force or relay release timing, the IR2117SPBF responds within tens of nanoseconds, enabling precision control loops in hydraulic and pneumatic systems.
おすすめ
Solar Inverter - DC Side Disconnect Switch
In photovoltaic (PV) solar inverters, the IR2117SPBF can drive the high-side DC disconnect switch that isolates the PV string from the inverter input for maintenance or fault conditions. The 600 V rating comfortably covers the 600 V max Voc of a typical residential PV string, and the asymmetric source/sink ratings provide fast turn-off for safety-critical disconnect events. Bootstrap operation simplifies the auxiliary supply design, requiring only one low-side rail. Combined with a low-side driver, the IR2117SPBF can also drive the synchronous boost PFC switch on the high side. Compared with electromechanical DC contactors, the IR2117SPBF + MOSFET solution offers silent operation, faster disconnect times (<1 us vs 10-50 ms), and unlimited cycle life.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IR2117SPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IR2117PBF | IR2117STRPBF | IR2118SPBF | IR2109SPBF | IR2128SPBF | NCP5106BDR2G |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | 8-SOIC (SOIC-8) | PDIP-8 (through-hole) | 8-SOIC (T&R) - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Driver Configuration | Single high-side | Single high-side | Single high-side | Single high-side | Half-bridge (H+L) | Single high-side w/ current limit | Single high-side |
| Maximum Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 500 V | 600 V |
| Output Current (Source / Sink) | 0.25 A / 0.5 A | 0.25 A / 0.5 A | 0.25 A / 0.5 A | 0.25 A / 0.5 A | 0.2 A / 0.35 A | 0.25 A / 0.5 A | 0.25 A / 0.5 A |
| Logic Input Polarity | Non-inverting | Non-inverting | Non-inverting | Inverting | Non-inverting (HIN/LIN) | Non-inverting | Non-inverting |
| Gate Drive Supply (VBS) | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 18 V | 10 V to 20 V |
| Undervoltage Lockout | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 100) | $1.78 | $1.85 | $1.78 | $1.95 | $1.65 | $2.20 | $1.55 |
主な差別化要因
- 600V rating - among the highest for single-channel high-side drivers in SOIC-8 （vs NCP5106BDR2G)
- Asymmetric source/sink rating (0.25A / 0.5A) optimized for fast turn-off （vs IR2109SPBF)
- Single-input non-inverting logic interface simplifies MCU connection （vs IR2118SPBF)
設計ノート
Bootstrap capacitor sizing is the most critical design parameter for the IR2117SPBF. The bootstrap cap must supply the gate charge of the high-side MOSFET plus the quiescent current of the level shifter for the duration of the longest high-side on-time. A practical starting point is CBOOT >= 10 x QG(MOSFET) at minimum, with a 1 uF ceramic (X7R) being typical for MOSFETs up to 50 nC of gate charge. Insufficient capacitance causes VBS droop below the UVLO threshold, leading to intermittent shutdown of the high-side output and potentially catastrophic shoot-through in half-bridge topologies.
Place the bootstrap diode (ultra-fast recovery, trr < 50 ns) and the bootstrap capacitor as close as possible to pins 6 (VB) and 5 (VS) of the IR2117SPBF. The high-side gate drive loop area should be minimized to keep parasitic inductance low - this loop is the source of VBS ringing that can damage the IC. A 0.1 uF ceramic bypass cap from VCC to GND (pin 1 to pin 3) should be placed within 5 mm of the package. Use wide copper pours for VCC, GND, VB, and VS to minimize voltage drops during switching transients.
Do not exceed the maximum VBS voltage of 20 V absolute maximum; a 15 V zener clamp from VB to VS is recommended for protection against transients. The IR2117SPBF cannot drive a continuous high-side on indefinitely because the bootstrap cap eventually discharges through the VBS quiescent current - the IC is intended for PWM operation with duty cycles below 99%. For 100% high-side duty cycle applications, add a separate charge pump or isolated DC-DC supply for the bootstrap rail. Also note that initial power-up requires at least one low-side cycle to charge the bootstrap cap before the high-side output can switch.
Estimated: at maximum switching frequency (typical 500 kHz for small MOSFETs), the IR2117SPBF's quiescent current of ~1-2 mA plus gate charge losses produce package dissipation of approximately 100-300 mW. The 8-SOIC package has theta_JA of approximately 150 C/W on a 1 oz 2-layer board with minimal copper, giving a junction temperature rise of 15-45 C above ambient - acceptable for industrial -40 C to +125 C operation without special thermal management. For continuous high-frequency operation above 1 MHz, consider the larger 8-PDIP version (IR2117PBF) which has lower thermal resistance.
コンプライアンス情報
PbF suffix indicates lead-free / RoHS-compliant construction. Not AEC-Q100 qualified (industrial-grade only). For automotive applications, consider the AUIR2117 variant.
