IR2117STRPBF - 600V High-Side Gate Driver, 8-SOIC | Infineon
MPN: IR2117STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.1 | $11.00 |
| 100 | $0.93 | $93.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
| 2,500 | $0.58 | $1,450.00 |
Drop-in alternatives for IR2117STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2181STRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRS2104STRPBF
β Drop-Inβ In Stock
$0.45 / Unit
View Datasheet βIRS21834STRPBF
β Drop-Inβ In Stock
$1.45 / Unit
View Datasheet βNCP5106ADR2G
β Drop-Inπ Reference alternative (not in catalog)
UCC27714D2
β Drop-Inπ Reference alternative (not in catalog)
IR2117STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | High-Side Single Channel |
| Function | Gate Driver, Non-Inverting |
| Input Logic Compatibility | CMOS / TTL |
| Number of Outputs | 1 |
| Driven Device | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Floating Channel Offset Voltage | up to +600 V |
| Peak Source Current (IOUT+) | 250 mA |
| Peak Sink Current (IOUT-) | 500 mA |
| Propagation Delay (Ton/Toff) | 125 ns (max) |
| Rise Time | 80 ns (typ) |
| Fall Time | 40 ns (typ) |
| Undervoltage Lockout (UVLO) | Yes |
| Negative Transient Voltage Tolerance | Yes, dV/dt immune |
| Operating Temperature Range | -40 C to +125 C |
| Package / Case | 8-SOIC (0.154 inch / 3.90 mm width) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | MSL3 (per JEDEC J-STD-020) |
IR2117STRPBF Pin Configuration
| Pin 1 | VCC β Logic and gate-drive supply (10 V to 20 V) |
| Pin 2 | IN β Logic input, CMOS-compatible, non-inverting |
| Pin 3 | GND β Logic and low-side ground return |
| Pin 4 | NC β No internal connection (per datasheet) |
| Pin 5 | VS β High-side floating supply return / switch node |
| Pin 6 | VB β Floating supply (bootstrap), referenced to VS |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | NC β No internal connection (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IR2117STRPBF is suitable for 6 applications: Switch-Mode Power Supply (SMPS), Half-Bridge and Full-Bridge Inverter, Electronic Ballast for HID and Fluorescent Lamps, Class-D Audio Amplifier Output Stage, DC-DC Buck/Boost Synchronous Rectifier Driver, Motor Drive Inverter (Low-Power BLDC/PMSM).
Switch-Mode Power Supply (SMPS)
The IR2117STRPBF drives the high-side N-channel MOSFET in 100-500 W half-bridge or forward SMPS converters, where its 600 V floating channel comfortably handles 311 VDC bus from rectified 220 VAC mains. The 0.25 A source / 0.5 A sink peak current is well-matched to MOSFETs with Qg up to approximately 50 nC at 100 kHz switching. Compared to a discrete gate-drive transformer, the IR2117STRPBF eliminates isolation components and reduces BOM by 30-40%, while the 125 ns propagation delay preserves PWM duty-cycle accuracy for closed-loop regulation. The integrated UVLO protects the MOSFET from linear-region operation during bootstrap capacitor charge-up.
Recommended
Half-Bridge and Full-Bridge Inverter
In half-bridge motor and inverter topologies up to 600 V bus, the IR2117STRPBF drives the upper N-channel IGBT or MOSFET referenced to the switching node. Each IR2117STRPBF is dedicated to a single high-side switch, with the low-side switch typically driven by a complementary low-side driver or by an IR2110/IRS2104 family part. The dV/dt immunity (specified up to 50 V/ns in the datasheet) prevents false triggering in noisy switching environments, and the floating channel tolerance of negative transients on the VS pin allows reliable operation even with substantial stray inductance on the DC bus. Designers should size the bootstrap capacitor for at least 10x the MOSFET gate charge to minimize Vgs droop.
Recommended
Electronic Ballast for HID and Fluorescent Lamps
Electronic ballasts for high-intensity-discharge (HID) and fluorescent lamps use a half-bridge resonant inverter at 30-100 kHz; the IR2117STRPBF drives the high-side N-channel MOSFET in this topology. Its 600 V rating covers 220 VAC rectified bus, while the 80 ns/40 ns rise/fall times enable efficient resonant switching with low transition loss. The CMOS-compatible logic input interfaces directly with microcontroller or PFC controller PWM outputs, simplifying the ballast control circuit. The bootstrap supply architecture eliminates the need for an isolated bias winding on the resonant inductor, reducing PCB area and BOM cost.
Recommended
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers use a half-bridge or full-bridge topology to switch 50-500 W audio output stages at 250 kHz to 1 MHz; the IR2117STRPBF can drive the high-side MOSFET in lower-power (<100 W) Class-D designs. The 125 ns propagation delay introduces minor dead-time but is acceptable for 20-50 kHz audio bandwidth applications. Compared to gate-drive transformers or bootstrap-less discrete drivers, the IR2117STRPBF provides clean level shifting of the audio PWM signal without adding distortion. For higher-power Class-D amplifiers, designers typically upgrade to the IRS2181STRPBF family for higher drive current.
Recommended
DC-DC Buck/Boost Synchronous Rectifier Driver
In synchronous-rectifier buck or boost DC-DC converters, the IR2117STRPBF can drive the high-side N-channel MOSFET acting as the synchronous rectifier (replacing a Schottky diode for higher efficiency). The 600V rating provides comfortable margin for 48 V telecom bus or 380 V rectified-input PFC applications. The 10-20 V VCC range aligns directly with common 12 V auxiliary supply rails found in industrial and telecom systems, eliminating the need for an additional gate-drive bias regulator. For multi-MHz converter designs, an upgrade to the UCC27714D2 or IRS2181STRPBF is recommended for faster switching.
Recommended
Motor Drive Inverter (Low-Power BLDC/PMSM)
Three-phase BLDC and PMSM motor drive inverters in the 50-300 V / 1-10 A range use three half-bridges, each requiring a high-side gate driver; the IR2117STRPBF is well-suited for low-power applications such as ceiling fans, e-bike controllers, and small pump drives. Three IR2117STRPBF chips (one per phase) drive the three high-side MOSFETs, while a complementary low-side driver (or three IR2104STRPBF half-bridge drivers) drive the low-side switches. The integrated dV/dt immunity is essential in motor drives where the switching node experiences fast transients during PWM commutation. For higher-power industrial servo drives, upgrade to gate drivers with integrated desaturation protection.
Recommended
Recommended Products Summary
Engineering reference data for IR2117STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2181STRPBF | IRS2104STRPBF | IRS21834STRPBF | NCP5106ADR2G | UCC27714D2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Texas Instruments |
| Package | 8-SOIC (0.154 inch) | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same |
| Configuration | High-Side Single | High-Side Single | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | High-Side Single | High-Side Single |
| Floating Channel Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Peak Source Current | 250 mA | 1.9 A | 0.21 A / 0.36 A | 2.5 A | 0.25 A | 4.0 A |
| Peak Sink Current | 500 mA | 1.9 A | 0.21 A / 0.36 A | 2.5 A | 0.5 A | 4.0 A |
| VCC Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 18 V |
| Propagation Delay | 125 ns max | 200 ns max | 130 ns max | 200 ns max | 100 ns max | 90 ns max |
| Bootstrap Diode | External required | External required | External required | External required | Integrated | External required |
Key Differentiators
- Wide floating channel voltage headroom for 220 VAC rectified bus (vs IRS2181STRPBF)
- Low quiescent current draw enables standby-efficient ballast designs (vs UCC27714D2)
- Integrated HVIC technology in SOIC-8 reduces PCB area vs discrete bootstrap solutions (vs Discrete bootstrap + level-shifter)
Design Notes
Bootstrap capacitor sizing is the single most critical design parameter for the IR2117STRPBF. The capacitor must be sized to provide at least 10x the total gate charge (Qg) of the driven MOSFET or IGBT to minimize Vgs droop during the high-side on-time. For example, driving a MOSFET with Qg = 50 nC requires a bootstrap capacitor of at least 0.5 uF. Use a low-ESR ceramic (X7R or X5R) or tantalum capacitor; undersized or high-ESR capacitors cause Vgs voltage sag and increased R_DS(on) dissipation during the on-time, especially at high duty cycle. The bootstrap diode should be a fast-recovery type (UF4007 or better) with reverse recovery time below 100 ns to prevent charge pumping back into VCC.
At switching frequencies above 200 kHz with large MOSFET gate charge, gate-drive power dissipation becomes significant. Estimated: gate-drive loss = Qg x Vgs x Fsw. For Qg = 50 nC, Vgs = 12 V, Fsw = 500 kHz, gate-drive loss is approximately 0.3 W per phase. The 8-SOIC package has theta_JA of approximately 150 C/W on standard JEDEC test board, so this dissipation causes only ~45 C junction temperature rise above ambient - well within the 125 C limit. For multi-channel designs (3-phase motor drives), the dissipation per chip is unchanged but overall PCB thermal density increases; ensure adequate copper pour on the SOIC-8 power and ground pins.
The VCC pin (pin 1) and the VB pin (pin 6) must each be decoupled with a 0.1 uF X7R ceramic capacitor placed within 2-3 mm of the respective pins; add a bulk 1-10 uF electrolytic or tantalum if the VCC source impedance exceeds 1 ohm at the switching frequency. The HO and VS traces must be short and wide (at least 0.5 mm width) to minimize parasitic inductance, which would otherwise cause ringing on the gate and dv/dt-induced false triggering. Keep the high-side switching node (VS) traces physically separated from the low-side IN and GND traces by at least 3 mm to avoid capacitive coupling of switching transients back into the logic input.
Common pitfalls when using the IR2117STRPBF: (1) forgetting the bootstrap diode - the datasheet shows it explicitly in the typical application; (2) using a slow-recovery diode (1N4007 is too slow, switching losses are excessive); (3) initial power-up with no switching - the bootstrap capacitor cannot charge without switching activity, so the high-side FET will not turn on until the first PWM pulse; (4) negative transients on the VS pin beyond the absolute maximum rating - add a low-impedance clamping path (Schottky diode or TVS) from VS to GND if long inductive leads or cables are present; (5) selecting too-small gate resistors, causing excessive ringing and EMI - typically 10-47 ohm gate resistors are appropriate.
Compliance Information
RoHS compliant and lead-free per Infineon product page and LCSC listing. Not AEC-Q100 qualified - this part is intended for industrial, consumer, and lighting applications. For automotive-qualified alternatives in the same family, consult Infineon's automotive-grade gate driver portfolio.
