IR2117PBF - 600V High-Side Gate Driver IC | Infineon
MPN: IR2117PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.75 | $17.50 |
| 100 | $1.52 | $152.00 |
| 500 | $1.35 | $675.00 |
| 1,000 | $1.18 | $1,180.00 |
IR2117PBF Overview
A high-side gate driver is a specialized integrated circuit that level-shifts a low-voltage logic control signal (typically 3.3 V or 5 V) up to the much higher source voltage of a high-side power switch (often 200 V to 600 V). High-side drivers sit at the top of the power management hierarchy, beneath gate drivers and above MOSFET/IGBT discrete semiconductors, allowing low-voltage microcontrollers and DSPs to safely control high-voltage power stages in switching converters, motor drives, and class-D amplifiers.
Key specifications include a gate drive supply range of 10 V to 20 V, 200 ns typical propagation delay, 130 ns rise time, and 65 ns fall time. The device features CMOS Schmitt-triggered logic inputs with internal pull-down, undervoltage lockout (UVLO) for safe startup, and dV/dt immunity for reliable operation in noisy switching environments. These parameters make the IR2117PBF well-suited for SMPS half-bridge and high-side switch topologies.
The IR2117PBF uses a monolithic HVIC process that integrates level-shifting logic and the high-side output buffer stage on a single die. This architecture minimizes propagation delay mismatch and reduces external component count, while the latch-immune CMOS construction provides robustness against negative voltage transients on the floating supply pin that commonly occur in inductive load switching.
Typical applications include switched-mode power supplies (SMPS), half-bridge DC-DC converters, motor drive inverters, electronic ballasts for fluorescent and LED lighting, and high-side switch drivers in industrial automation. The wide 600 V floating channel rating makes it especially useful in 230 V / 400 V AC-line applications where ample voltage headroom is needed for inductive kick-back.
When designing with the IR2117PBF, pay careful attention to bootstrap capacitor sizing: the capacitor must supply sufficient charge to keep the high-side supply rail above the UVLO threshold during the worst-case on-time of the switching cycle. Use a fast-recovery bootstrap diode and a small ceramic bypass capacitor placed close to the Vb and Vs pins to minimize switching noise coupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer datasheet, making it a one-stop reference for engineers evaluating the IR2117PBF for new designs and second-source qualification.
Drop-in alternatives for IR2117PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2118PBF
β Drop-Inπ Reference alternative (not in catalog)
IR2117PBF Maximum Ratings & Electrical Characteristics
| Driver Type | High-Side, Single Channel |
| Configuration | Non-Inverting |
| Number of Drivers | 1 |
| Maximum Offset (Floating) Voltage | 600 V |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Source Output Current | 250 mA |
| Sink Output Current | 500 mA |
| Propagation Delay (typ) | 200 ns |
| Rise Time (typ) | 130 ns |
| Fall Time (typ) | 65 ns |
| Logic Input Compatibility | CMOS / LSTTL (Schmitt-triggered with pull-down) |
| Undervoltage Lockout (UVLO) | Yes |
| dV/dt Immunity | Yes (latch-immune CMOS) |
| Operating Temperature Range | -40C to +125C |
| Package | 8-Pin PDIP (Through-Hole) |
| Mounting Type | Through-Hole |
| RoHS Status | Compliant (PBF suffix) |
| Lead-Free | Yes |
IR2117PBF Pin Configuration
| Pin 1 | Vcc β Logic and low-side supply voltage (10 V to 20 V) |
| Pin 2 | IN β Logic input (CMOS Schmitt-triggered, non-inverting) |
| Pin 3 | GND β Logic and low-side ground |
| Pin 4 | NC β No connection (per datasheet) |
| Pin 5 | Vs β High-side floating supply return |
| Pin 6 | Vb β High-side floating supply (bootstrap) |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | NC β No connection (per datasheet) |
Typical Applications
IR2117PBF is suitable for 6 applications: Switched-Mode Power Supplies (SMPS), Motor Drive Inverters, Electronic Ballasts (Fluorescent / HID / LED), Class-D Audio Amplifiers, Solar Inverters (String / Micro), Industrial Welding and Induction Heaters.
Switched-Mode Power Supplies (SMPS)
The IR2117PBF drives the high-side N-channel MOSFET in half-bridge and full-bridge SMPS topologies used in telecom and server power supplies. Its 600 V floating channel rating covers 400 V rectified bus voltages with 50% margin, while 250 mA source / 500 mA sink currents enable switching frequencies up to 200 kHz with typical MOSFET gate charges. The 200 ns propagation delay supports tight control loop timing in voltage-mode and current-mode PWM controllers, and the UVLO function prevents catastrophic half-bridge shoot-through during startup transients. Place a 0.1-1 uF X7R ceramic bootstrap capacitor and a UF4007 fast-recovery diode as shown in the Infineon datasheet's typical application.
Recommended
Motor Drive Inverters
In 3-phase inverter stages for BLDC and PMSM motors, the IR2117PBF drives each high-side IGBT/MOSFET switching leg at voltages up to 600 V. The latch-immune CMOS process survives the dV/dt transients (often >5 kV/us) generated by motor winding inductance during PWM commutation, and the -40C to +125C operating range supports under-hood industrial environments. The 500 mA sink current rapidly discharges IGBT gate capacitance for clean turn-off and reduced switching loss. For 3-phase designs, three IR2117PBF ICs plus three low-side gate drivers replace a single 3-phase driver IC, gaining per-leg fault isolation but requiring more PCB area than SOIC-packaged modern alternatives.
Recommended
Electronic Ballasts (Fluorescent / HID / LED)
Electronic ballasts for fluorescent lamps and high-intensity discharge (HID) lighting use the IR2117PBF to drive the high-side MOSFET in resonant half-bridge inverter stages operating at 30-100 kHz. The 600 V rating covers 230 V AC rectified bus with ample margin, and the floating channel supports bootstrap operation that simplifies the half-bridge gate drive supply. The non-inverting CMOS logic input interfaces directly with microcontroller or dedicated ballast controller ICs. The 130 ns rise and 65 ns fall times minimize crossover losses in the half-bridge, improving ballast efficiency by 1-3% compared to slower discrete driver designs.
Recommended
Class-D Audio Amplifiers
Class-D audio amplifiers use the IR2117PBF to drive high-side N-channel MOSFETs in the output half-bridge switching at 250-500 kHz PWM. The 200 ns propagation delay contributes negligible distortion at audio frequencies (20 Hz - 20 kHz), and the 600 V floating channel provides substantial headroom for the +/-25-50 V supply rails typical of automotive and prosumer amplifiers. The 500 mA sink current is well-matched to typical audio MOSFET gate charges of 30-80 nC, enabling clean switching edges that reduce EMI. The non-inverting CMOS input accepts PWM signals directly from common class-D controller ICs without additional level shifting.
Recommended
Solar Inverters (String / Micro)
In string solar inverters converting 600-1000 V DC photovoltaic arrays to AC grid power, the IR2117PBF drives the high-side IGBT or SiC MOSFET in the H-bridge inverter leg. The 600 V floating channel rating covers 400 V DC bus systems used in residential solar, and the latch-immune construction handles the harsh dV/dt environment of grid-tie switching. The device's UVLO protects the high-side switch from partially-on states during low-voltage ride-through events mandated by grid codes. The 8-pin PDIP package supports hand-repair and prototyping commonly used in solar product development labs.
Recommended
Industrial Welding and Induction Heaters
The IR2117PBF drives high-side IGBTs in industrial welding inverters and induction heating resonant tanks operating at 20-100 kHz with DC bus voltages up to 600 V. Its wide Vcc range (10-20 V) accommodates IGBT gate drive requirements at high temperatures, and the -40C to +125C operating range supports the harsh thermal environment of enclosed industrial cabinets. The robust HVIC process tolerates the large voltage transients common in welding arcs and induction coil switching, where dV/dt can exceed 10 kV/us. The through-hole PDIP package provides mechanical robustness preferred in industrial equipment where vibration and thermal cycling stress surface-mount solder joints.
Recommended
Recommended Products Summary
Engineering reference data for IR2117PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2118PBF | IR2109SPBF | IR2304SPBF | IRS21867STRPBF | IR2128SPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-PDIP (Through-Hole) | 8-PDIP (Through-Hole) | 8-SOIC (SMT) | 8-SOIC (SMT) | 8-SOIC (SMT) | 8-SOIC (SMT) |
| Driver Configuration | Single High-Side, Non-Inverting | Single High-Side, Inverting | Half-Bridge (High+Low) | Half-Bridge with Shutdown | Half-Bridge with Integrated Bootstrap Diode | Single High-Side with Current Limit |
| Maximum Floating Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Gate Drive Supply (Vcc) | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 12 V to 20 V |
| Source / Sink Current | 250 mA / 500 mA | 250 mA / 500 mA | 290 mA / 600 mA | 290 mA / 600 mA | 290 mA / 600 mA | 250 mA / 500 mA |
| Propagation Delay (typ) | 200 ns | 200 ns | 220 ns | 220 ns | 180 ns | 200 ns |
| UVLO Protection | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Single high-side only, simplest pinout in IR21xx family (vs IR2109SPBF / IR2304SPBF)
- Non-inverting logic input matches standard PWM controller outputs (vs IR2118PBF)
- Through-hole PDIP package for hand-repair and prototyping (vs IR2117S (SOIC-8 surface-mount))
Design Notes
Bootstrap capacitor sizing is critical for reliable high-side drive. Use a 0.1 uF to 1 uF X7R ceramic capacitor rated to at least 25 V placed as close as physically possible to the Vb and Vs pins. The capacitor must recharge from Vcc through a fast-recovery diode (UF4007 or better) during each low-side on-time. Estimated: at 100 kHz with 50% duty cycle and 1 nC gate charge, a 0.47 uF cap gives roughly 2.1 V droop, leaving 7.9 V margin above the 8.2 V typical UVLO threshold - adequate for most designs.
Minimize the trace area of the high-side switching loop (HO to gate, Vs return) to reduce parasitic inductance that causes ringing and possible dv/dt-induced latch-up. Keep the bootstrap diode and capacitor leads short and place them within 5 mm of the Vb/Vs pins. Use a ground plane on the bottom layer to provide a low-impedance return for the gate drive current. The 8-pin PDIP package has long leads that can help with thermal dissipation but increase parasitic inductance - consider the IR2117S in SOIC-8 for high-frequency designs above 200 kHz.
Do not exceed the 600 V absolute maximum rating on the floating channel (Vs to GND) - this is the most common cause of IR2117 failure in motor drive applications. Add a transient voltage suppressor (TVS) or RC snubber from Vs to GND if the bus voltage can overshoot above 500 V under fault conditions. Never operate the device with Vcc below 10 V - the internal logic and gate drive buffers will not have sufficient headroom and the output stage may partially conduct, causing shoot-through. The input pin IN is internally pulled down - leave it open only if the controller guarantees a defined low during reset.
Compliance Information
RoHS compliant per PBF suffix designation. Lead-free finish. Not AEC-Q100 qualified - this is an industrial/consumer grade driver. Halogen-free status not stated in the public datasheet.
