IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon
部品番号: IRFR540ZTRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 2,500 | $0.82 | $2,050.00 |
IRFR540ZTRLPBF 概要
Key specifications include a maximum drain-source voltage (VDS) of 100 V, continuous drain current (ID) of 35 A at TC, pulsed drain current of 110 A, and static drain-source on-resistance (RDS(on)) of 28.5 mΩ maximum at VGS = 10 V. The gate charge (Qg) is rated at 39 nC typical. Maximum power dissipation is 91 W at TC, and the operating junction temperature range is -55 °C to +175 °C, exceeding the standard 150 °C industrial limit.
The IRFR540ZTRLPBF uses Infineon's advanced planar process technology, optimized for low conduction loss and high repetitive avalanche ruggedness. The 100 V BVDSS rating combined with the 28.5 mΩ on-resistance places this part in the sweet spot for 48 V automotive and industrial switching applications, where it competes directly with similarly rated parts from STMicroelectronics, onsemi, and Vishay.
Typical applications include DC-DC converters in automotive ECU power stages, motor drive half-bridges, solenoid and relay drivers, synchronous rectifiers in isolated telecom DC-DC bricks, and high-current hot-swap controllers. The TO-252AA (DPAK) footprint with an exposed drain tab allows efficient PCB-side heat spreading.
When designing with this MOSFET, ensure the gate drive swings fully to 10 V for the lowest RDS(on). A gate-source pull-down resistor (10 kΩ minimum) prevents unwanted turn-on during supply transitions. For switching applications above 50 kHz, prioritize minimizing gate-loop and power-loop PCB inductance.
This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical design notes that go beyond the manufacturer datasheet to help engineers select and source this part efficiently.
ドロップイン代替品: IRFR540ZTRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFR540ZTRLPBF （同一形状・フットプリント） — 相違点: Technology, Package, Operating Junction Temperature.
クイック比較ツール — 並列比較する代替部品を選択:
IRFR540ZTRPBF
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IRFR540ZPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFU540ZPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
AUIRFR540Z
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR3710ZTRPBF
✅ ドロップイン✓ 在庫あり
$0.42 / 個
データシートを見る →IRFR4510
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STD30N10F7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR540ZTRLPBF 最大定格＆電気的特性
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC | 35 A |
| Pulsed Drain Current (IDM) | 110 A |
| Static Drain-Source On-Resistance (RDS(on)) | 28.5 mΩ max at VGS=10V |
| Total Gate Charge (Qg) | 39 nC |
| Power Dissipation (PD) at TC | 91 W |
| 動作接合温度 | -55 °C to +175 °C |
| Technology | IR MOSFET™ / HEXFET® |
| パッケージ | TO-252AA (DPAK) surface mount |
| 実装タイプ | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 qualified |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Packaging | Tape & Reel (TR-L), 800-piece leader/trailer |
IRFR540ZTRLPBF ピン構成
| ピン 1 | Gate — Gate drive input; logic-level or standard 10V VGS drive |
| ピン 2 | Drain — Drain connection (also electrically bonded to the metal tab/backside) |
| ピン 3 | Source — Source connection; typically tied to circuit ground |
| ピン TAB | Drain (Tab) — Exposed metal tab electrically connected to Drain; solder to PCB copper pour for thermal dissipation |
安全動作領域
主な用途
IRFR540ZTRLPBF の用途: 7 件s: 48 V Automotive ECU Power Stages, Synchronous Rectifier in Telecom DC-DC, Motor Drive Half-Bridges, Solenoid and Relay Driver Switches, Hot-Swap and Load Switch Controllers, LED Lighting Driver Switches, Battery Management and Protection Switches.
48 V Automotive ECU Power Stages
The IRFR540ZTRLPBF's 100 V BVDSS, 35 A continuous ID rating, and AEC-Q101 qualification make it a strong fit for 48 V automotive ECU power conversion stages where MOSFETs must handle repetitive load transients from actuators, pumps, and DC-DC converters. Its 28.5 mΩ max RDS(on) at VGS = 10 V keeps conduction losses under 12 W at 20 A, manageable with a 1 sq-inch copper pour. The TO-252AA (DPAK) tab is soldered to a thermal land on the PCB, providing theta_JA around 50 °C/W for typical 4-layer FR4 layouts. Compared with lower-voltage 40 V parts, the 100 V rating offers comfortable headroom for 48 V load-dump transients up to 65 V, eliminating the need for additional TVS protection in many designs.
おすすめ
Synchronous Rectifier in Telecom DC-DC
In 48 V-input isolated telecom DC-DC bricks, the IRFR540ZTRLPBF serves as a low-side synchronous rectifier thanks to its 28.5 mΩ RDS(on), 39 nC Qg, and 100 V BVDSS. The 100 V rating provides margin above 72 V telecom rail transients while the 91 W power dissipation rating handles high secondary-side currents without thermal derating. The DPAK package supports reflow assembly and tab soldering for low thermal resistance. For high-frequency (>200 kHz) designs, the IRFR540ZTRLPBF's Qg of 39 nC is acceptable but switching losses dominate; designers should evaluate lower-Qg parts such as the IRFH5015TRPBF for MHz operation.
おすすめ
Motor Drive Half-Bridges
The IRFR540ZTRLPBF is well-suited to low-side switches in 24 V brushed DC motor half-bridges and H-bridges for industrial automation. Its 35 A continuous current rating supports motors up to roughly 500 W mechanical output, and the 110 A pulsed rating handles motor stall transients for the typical 100 ms duration specified by motor manufacturers. The 28.5 mΩ RDS(on) keeps I²R conduction losses low, while the TO-252AA package can be heatsink-attached for continuous high-current operation. The AEC-Q101 qualification provides reliability margin in industrial environments with thermal cycling and vibration.
おすすめ
Solenoid and Relay Driver Switches
For switching inductive loads such as 24 V solenoids, relays, and contactors, the IRFR540ZTRLPBF provides the ruggedness of the IR MOSFET™ process with avalanche-rated single-pulse energy capability. The 100 V BVDSS comfortably absorbs flyback voltage spikes from typical 24 V solenoids (VCLAMP up to 60 V with TVS or 80 V with snubber), while the 35 A ID supports high inrush currents from DC solenoids and relay coils. The TO-252AA (DPAK) package enables compact PCB designs. Designers should add a gate-source pull-down resistor (10 kΩ) to prevent unwanted turn-on during supply transients, especially in automotive load-dump scenarios.
おすすめ
Hot-Swap and Load Switch Controllers
The IRFR540ZTRLPBF serves as the main pass-element in -48 V telecom hot-swap controllers and 24 V/48 V load switches. Its 100 V BVDSS, 28.5 mΩ RDS(on), and 35 A ID rating allow continuous load currents up to 25 A with proper PCB thermal design, while its repetitive avalanche rating handles the inrush transients when bulk capacitors charge. The DPAK package provides sufficient thermal mass for sub-second fault conditions. Compared with integrated hot-swap ICs, a discrete MOSFET solution using the IRFR540ZTRLPBF offers flexibility for higher current or higher voltage applications.
おすすめ
LED Lighting Driver Switches
In high-brightness LED lighting drivers and architectural lighting controllers, the IRFR540ZTRLPBF functions as a PWM switching element for buck and boost converters driving 1-5 A LED strings. Its low RDS(on) of 28.5 mΩ minimizes conduction losses at typical LED currents of 1-3 A, while the 100 V rating provides headroom for 48 V LED strings with inductive transients. The DPAK package simplifies thermal management with tab-soldered copper pours. For applications requiring analog dimming, the device's low gate threshold allows direct MCU PWM drive with 3.3 V logic-level translation via small-signal driver stages.
おすすめ
Battery Management and Protection Switches
In battery management systems (BMS) for 24 V or 36 V battery packs and e-mobility applications, the IRFR540ZTRLPBF operates as a low-side disconnect switch or active balancing element. The 100 V BVDSS handles the maximum stack voltage with margin, while the 35 A continuous ID supports high discharge currents in power tools and e-bike applications. AEC-Q101 qualification makes it suitable for automotive-grade battery systems. The low RDS(on) of 28.5 mΩ ensures low power dissipation during continuous discharge, extending battery runtime. For higher-side switching, a P-channel variant or charge-pump driver is preferred.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFR540ZTRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFR540ZTRPBF | IRFR540ZPBF | IRFU540ZPBF | AUIRFR540Z | IRFR3710Z | STD30N10F7 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK, through-hole) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 35 A | 35 A | 35 A | 35 A | 35 A | 30 A | 30 A |
主な差別化要因
- AEC-Q101 automotive qualification with 175 °C max junction temperature （vs IRFR540ZTRPBF)
- 35 A continuous drain current vs lower-rated cross-brand equivalents （vs STD30N10F7)
- Lower RDS(on) and higher pulsed current capability than industry-standard IRF540 （vs IRF540 (legacy 1970s design))
設計ノート
Estimated: at VGS=10V, ID=20A continuous, RDS(on)=28.5 mΩ, conduction loss ≈ 11.4 W. With a 1 sq-inch copper pour on a 4-layer FR4 PCB, theta_JA is approximately 50 °C/W, yielding a junction temperature rise of roughly 145 °C at TA=70 °C, exceeding the 175 °C max rating. For continuous 20 A operation, either reduce current to ~15 A, increase PCB copper area to 2+ sq inches, or attach a small clip-on heatsink. The DPAK tab must be soldered to the thermal land with sufficient via stitching for heat transfer to inner layers.
Minimize parasitic inductance in the power loop (drain-source switching loop) by keeping the input capacitors, MOSFET drain, and source return paths as compact as possible - typically a 5 mm × 5 mm loop area. Use a 4-layer PCB with a dedicated ground plane directly under the DPAK footprint. Gate drive traces should be at least 0.5 mm wide and routed away from drain node transients to avoid capacitive coupling-induced false triggering. Place a 10 kΩ gate-source pull-down resistor (low-side) or 100 kΩ (high-side via charge pump) to prevent unwanted turn-on during supply transitions.
Do not exceed VGS = ±20 V (gate-source absolute maximum). The IRFR540ZTRLPBF is a standard-threshold (not logic-level) MOSFET and requires at least 6-8 V to achieve low RDS(on); driving it with 3.3 V logic without a gate driver will leave it in the linear region with very high losses. For 48 V automotive load-dump protection, add a TVS clamp (e.g., 90 V bidirectional) at the drain node to limit transient peaks below the 100 V BVDSS rating. Verify avalanche energy rating for repetitive inductive switching applications.
For switching frequencies above 50 kHz, gate-loop inductance becomes critical. A 10 nH gate loop combined with 39 nC Qg produces a voltage spike of V = L × dI/dt that can overshoot the VGS maximum during fast turn-off. Use a gate-drive resistor (10-47 Ω) in series with the gate to dampen ringing, and place a small ferrite bead or 10 Ω gate-source resistor if oscillation persists. The IRFR540ZTRLPBF's internal gate resistance is low, so external damping is essential in half-bridge configurations where cross-conduction could destroy the device.
コンプライアンス情報
RoHS compliant per PBF suffix. AEC-Q101 automotive qualified per Xecor comparison data. Lead-free (Pb-free) confirmed by part number suffix. Halogen-free status not explicitly stated in verified data - marked unknown.
