Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

MPN: IRFR540ZTRLPBF ✓ Active
In Stock Ships in 1-3 business days
100 V Vdss 35 A Id 28.5 mΩ max at VGS=10V Rds(on) TO-252AA (DPAK) surface mount Package
From $0.82 USD / Unit
MOQ: 1 |
Price updated: 2026-09-15
Volume Pricing
Qty Unit Price Extended
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.28 $128.00
500 $1.05 $525.00
1,000 $0.92 $920.00
2,500 $0.82 $2,050.00
ℹ️ All prices are in USD

IRFR540ZTRLPBF Overview

The Infineon IRFR540ZTRLPBF is a 100 V, 35 A N-channel power MOSFET built on the company's proprietary IR MOSFET™ advanced process technology, housed in a surface-mount TO-252AA (DPAK) package and supplied on a 13-inch tape-and-reel with 800-piece leader and trailer (TR-L suffix). It is qualified to AEC-Q101 for automotive applications, making it suitable for harsh-environment designs. The device integrates a HEXFET® power stage with extremely low on-resistance per silicon area.

Key specifications include a maximum drain-source voltage (VDS) of 100 V, continuous drain current (ID) of 35 A at TC, pulsed drain current of 110 A, and static drain-source on-resistance (RDS(on)) of 28.5 mΩ maximum at VGS = 10 V. The gate charge (Qg) is rated at 39 nC typical. Maximum power dissipation is 91 W at TC, and the operating junction temperature range is -55 °C to +175 °C, exceeding the standard 150 °C industrial limit.

The IRFR540ZTRLPBF uses Infineon's advanced planar process technology, optimized for low conduction loss and high repetitive avalanche ruggedness. The 100 V BVDSS rating combined with the 28.5 mΩ on-resistance places this part in the sweet spot for 48 V automotive and industrial switching applications, where it competes directly with similarly rated parts from STMicroelectronics, onsemi, and Vishay.

Typical applications include DC-DC converters in automotive ECU power stages, motor drive half-bridges, solenoid and relay drivers, synchronous rectifiers in isolated telecom DC-DC bricks, and high-current hot-swap controllers. The TO-252AA (DPAK) footprint with an exposed drain tab allows efficient PCB-side heat spreading.

When designing with this MOSFET, ensure the gate drive swings fully to 10 V for the lowest RDS(on). A gate-source pull-down resistor (10 kΩ minimum) prevents unwanted turn-on during supply transitions. For switching applications above 50 kHz, prioritize minimizing gate-loop and power-loop PCB inductance.

This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical design notes that go beyond the manufacturer datasheet to help engineers select and source this part efficiently.

Drop-in alternatives for IRFR540ZTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IRFR540ZTRLPBF (same form factor and footprint) — differing in Technology, Package, Operating Junction Temperature.

Infineon
Technology: HEXFET (IR MOSFET)
Package: TO-252AA (DPAK)
Operating Junction Temperature: -55C to +175C
Compare with IRFR540ZTRLPBF →
Infineon
Technology: IR MOSFET
Compare with IRFR540ZTRLPBF →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IRFR540ZTRPBF

✅ Drop-In
Infineon
📦 TO-252AA (DPAK)
N-Channel MOSFET · 100 V · 35 A (at Tc) · 28.5 mOhm at Vgs=10V · 39 nC · 91 W (at Tc)

✓ In Stock

$0.32 / Unit

View Datasheet →

IRFR540ZPBF

✅ Drop-In
📦 TO-252AA (DPAK)
same die, basic lead-free DPAK tape-and-reel without long leader/trailer; identical electrical specs

📋 Reference alternative (not in catalog)

IRFU540ZPBF

✅ Drop-In
📦 TO-251AA (IPAK)
same die in through-hole IPAK variant; pin-out and electrical specs identical, footprint differs (THT vs SMD)

📋 Reference alternative (not in catalog)

AUIRFR540Z

✅ Drop-In
📦 TO-252AA (DPAK)
automotive-grade (AU prefix) variant in same DPAK; identical 100 V/35 A/28.5 mΩ die, AEC-Q101 qualified

📋 Reference alternative (not in catalog)

IRFR3710ZTRPBF

✅ Drop-In
Infineon
📦 TO-252AA (DPAK)
N-Channel · 100 V · 56 A · ±20 V · 18 mOhm

✓ In Stock

$0.42 / Unit

View Datasheet →

IRFR4510

✅ Drop-In
📦 TO-252AA (DPAK)
similar Infineon N-channel in DPAK; 100 V BVDSS, lower current rating (~30 A); pin-compatible footprint

📋 Reference alternative (not in catalog)

STD30N10F7

✅ Drop-In
📦 TO-252AA (DPAK)
100 V STripFET N-channel in same DPAK; ID 30 A (-14% vs 35 A), lower RDS(on); pin-compatible DPAK footprint

📋 Reference alternative (not in catalog)

IRFR540ZTRLPBF Maximum Ratings & Electrical Characteristics

FET Type N-Channel
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at TC 35 A
Pulsed Drain Current (IDM) 110 A
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V
Total Gate Charge (Qg) 39 nC
Power Dissipation (PD) at TC 91 W
Operating Junction Temperature -55 °C to +175 °C
Technology IR MOSFET™ / HEXFET®
Package TO-252AA (DPAK) surface mount
Mounting Type Surface Mount
Pin Count 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 qualified
Lead-Free / RoHS Yes (PBF suffix)
Packaging Tape & Reel (TR-L), 800-piece leader/trailer

IRFR540ZTRLPBF Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 Gate — Gate drive input; logic-level or standard 10V VGS drive
Pin 2 Drain — Drain connection (also electrically bonded to the metal tab/backside)
Pin 3 Source — Source connection; typically tied to circuit ground
Pin TAB Drain (Tab) — Exposed metal tab electrically connected to Drain; solder to PCB copper pour for thermal dissipation

Safe Operating Area

DC Continuous Operation

Typical Applications

IRFR540ZTRLPBF is suitable for 7 applications: 48 V Automotive ECU Power Stages, Synchronous Rectifier in Telecom DC-DC, Motor Drive Half-Bridges, Solenoid and Relay Driver Switches, Hot-Swap and Load Switch Controllers, LED Lighting Driver Switches, Battery Management and Protection Switches.

🚗

48 V Automotive ECU Power Stages

The IRFR540ZTRLPBF's 100 V BVDSS, 35 A continuous ID rating, and AEC-Q101 qualification make it a strong fit for 48 V automotive ECU power conversion stages where MOSFETs must handle repetitive load transients from actuators, pumps, and DC-DC converters. Its 28.5 mΩ max RDS(on) at VGS = 10 V keeps conduction losses under 12 W at 20 A, manageable with a 1 sq-inch copper pour. The TO-252AA (DPAK) tab is soldered to a thermal land on the PCB, providing theta_JA around 50 °C/W for typical 4-layer FR4 layouts. Compared with lower-voltage 40 V parts, the 100 V rating offers comfortable headroom for 48 V load-dump transients up to 65 V, eliminating the need for additional TVS protection in many designs.

🌐

Synchronous Rectifier in Telecom DC-DC

In 48 V-input isolated telecom DC-DC bricks, the IRFR540ZTRLPBF serves as a low-side synchronous rectifier thanks to its 28.5 mΩ RDS(on), 39 nC Qg, and 100 V BVDSS. The 100 V rating provides margin above 72 V telecom rail transients while the 91 W power dissipation rating handles high secondary-side currents without thermal derating. The DPAK package supports reflow assembly and tab soldering for low thermal resistance. For high-frequency (>200 kHz) designs, the IRFR540ZTRLPBF's Qg of 39 nC is acceptable but switching losses dominate; designers should evaluate lower-Qg parts such as the IRFH5015TRPBF for MHz operation.

🏭

Motor Drive Half-Bridges

The IRFR540ZTRLPBF is well-suited to low-side switches in 24 V brushed DC motor half-bridges and H-bridges for industrial automation. Its 35 A continuous current rating supports motors up to roughly 500 W mechanical output, and the 110 A pulsed rating handles motor stall transients for the typical 100 ms duration specified by motor manufacturers. The 28.5 mΩ RDS(on) keeps I²R conduction losses low, while the TO-252AA package can be heatsink-attached for continuous high-current operation. The AEC-Q101 qualification provides reliability margin in industrial environments with thermal cycling and vibration.

Solenoid and Relay Driver Switches

For switching inductive loads such as 24 V solenoids, relays, and contactors, the IRFR540ZTRLPBF provides the ruggedness of the IR MOSFET™ process with avalanche-rated single-pulse energy capability. The 100 V BVDSS comfortably absorbs flyback voltage spikes from typical 24 V solenoids (VCLAMP up to 60 V with TVS or 80 V with snubber), while the 35 A ID supports high inrush currents from DC solenoids and relay coils. The TO-252AA (DPAK) package enables compact PCB designs. Designers should add a gate-source pull-down resistor (10 kΩ) to prevent unwanted turn-on during supply transients, especially in automotive load-dump scenarios.

🖥️

Hot-Swap and Load Switch Controllers

The IRFR540ZTRLPBF serves as the main pass-element in -48 V telecom hot-swap controllers and 24 V/48 V load switches. Its 100 V BVDSS, 28.5 mΩ RDS(on), and 35 A ID rating allow continuous load currents up to 25 A with proper PCB thermal design, while its repetitive avalanche rating handles the inrush transients when bulk capacitors charge. The DPAK package provides sufficient thermal mass for sub-second fault conditions. Compared with integrated hot-swap ICs, a discrete MOSFET solution using the IRFR540ZTRLPBF offers flexibility for higher current or higher voltage applications.

💡

LED Lighting Driver Switches

In high-brightness LED lighting drivers and architectural lighting controllers, the IRFR540ZTRLPBF functions as a PWM switching element for buck and boost converters driving 1-5 A LED strings. Its low RDS(on) of 28.5 mΩ minimizes conduction losses at typical LED currents of 1-3 A, while the 100 V rating provides headroom for 48 V LED strings with inductive transients. The DPAK package simplifies thermal management with tab-soldered copper pours. For applications requiring analog dimming, the device's low gate threshold allows direct MCU PWM drive with 3.3 V logic-level translation via small-signal driver stages.

🔋

Battery Management and Protection Switches

In battery management systems (BMS) for 24 V or 36 V battery packs and e-mobility applications, the IRFR540ZTRLPBF operates as a low-side disconnect switch or active balancing element. The 100 V BVDSS handles the maximum stack voltage with margin, while the 35 A continuous ID supports high discharge currents in power tools and e-bike applications. AEC-Q101 qualification makes it suitable for automotive-grade battery systems. The low RDS(on) of 28.5 mΩ ensures low power dissipation during continuous discharge, extending battery runtime. For higher-side switching, a P-channel variant or charge-pump driver is preferred.

What is the drain-source voltage rating of IRFR540ZTRLPBF?
The IRFR540ZTRLPBF has a maximum drain-source voltage (VDS) of 100 V. According to the Infineon product page for the IRFR540Z family, this BVDSS rating makes the device well-suited for 48 V automotive electrical systems, 24 V industrial rails, and telecom brick converters that operate up to roughly 72 V nominal. Designers should apply standard 80% derating for reliable operation.
What is the maximum continuous drain current of IRFR540ZTRLPBF?
The IRFR540ZTRLPBF delivers 35 A continuous drain current (ID) when measured at case temperature TC = 25 °C, and the pulsed drain current (IDM) is 110 A for a typical pulsed duration. Real PCB designs must derate against silicon junction temperature; per Infineon's safe operating area, expect approximately 17-20 A continuous at TA = 70 °C with a 1 sq inch copper pour.
What package does IRFR540ZTRLPBF use?
The IRFR540ZTRLPBF is supplied in a TO-252AA (DPAK) surface-mount package with three leads (gate, drain, source) plus an exposed drain tab. According to DigiKey's listing, the package is optimized for surface-mount power applications and shares the standard DPAK land pattern used by most 100 V-class N-channel MOSFETs in this power range.
Where can I buy IRFR540ZTRLPBF online and what is the price?
As of 2026-09-15, the IRFR540ZTRLPBF is in stock at DigiKey (1-piece pricing approximately USD 1.85, bulk discounts to USD 0.92 at 1,000 pieces), Mouser, Octopart-listed distributors, and TrustedParts aggregated channels. Stock is generally available with same-day shipping from major authorized distributors; lead time on allocation typically remains under 6 weeks.
What is the lead time for IRFR540ZTRLPBF?
As of 2026-09-15, the IRFR540ZTRLPBF shows active stock across at least seven authorized distributors listed on Octopart. Lead time from major catalog distributors such as DigiKey and Mouser is typically same-day to 2 weeks for volumes under 5,000 pieces. Direct factory orders through Infineon should be quoted; expect 10-14 weeks for high-volume production schedules.
Is IRFR540ZTRLPBF in stock right now?
Yes, as of 2026-09-15 the IRFR540ZTRLPBF is in stock at DigiKey and other major authorized distributors. Octopart lists seven distributors with active inventory. For high-volume production needs, Infineon's factory-direct channel is also available with longer lead times. Always verify real-time stock at the time of order placement.
What is the RDS(on) of IRFR540ZTRLPBF?
The IRFR540ZTRLPBF has a maximum static drain-source on-resistance (RDS(on)) of 28.5 mΩ at VGS = 10 V, ID = 35 A, TJ = 25 °C. This low RDS(on) translates directly to lower conduction losses - at 20 A continuous load, dissipation is roughly 11.4 W. Mouser's listing confirms this 28.5 mΩ figure as the headline specification.
IRFR540ZTRLPBF vs STD30N10F7 - which is better for 48 V automotive loads?
Both parts target 100 V-class N-channel applications in DPAK packaging. The IRFR540ZTRLPBF (Infineon) offers 100 V BVDSS, 35 A continuous, 28.5 mΩ RDS(on), AEC-Q101 automotive qualification, and IR MOSFET™ technology. The STD30N10F7 (STMicroelectronics) offers 100 V, 30 A, and STripFET™ technology with lower Qg for faster switching. For 48 V automotive ECU power stages where AEC-Q101 qualification is required, the Infineon IRFR540ZTRLPBF is the better fit.
IRFR540ZTRLPBF vs IRFR540ZPBF - what is the difference?
The IRFR540ZTRLPBF is the tape-and-reel-packaged variant with an 800-piece leader and trailer (TR-L suffix), optimized for high-volume surface-mount production. The IRFR540ZPBF is the basic lead-free version, also in tape-and-reel but without the long leader/trailer. Both parts share identical silicon, die, and electrical specifications - only the reel format differs. Per the FindIC cross-reference page, they are functionally interchangeable.
When should I choose IRFR540ZTRLPBF over IRFR3710Z?
Choose the IRFR540ZTRLPBF when you need a 100 V BVDSS, 35 A-rated N-channel MOSFET with AEC-Q101 qualification and 28.5 mΩ RDS(on) for 48 V automotive or industrial switching applications. The IRFR3710Z is a 100 V part but rated lower current (~30 A typical) and is generally recommended as a substitute only when IRFR540Z is unavailable - both share the DPAK footprint.
What is the best drop-in replacement for IRFR540ZTRLPBF?
The best drop-in replacement is the Infineon IRFR540ZTRPBF (standard tape-and-reel format) - same die, same DPAK package, identical electrical specifications, and same AEC-Q101 qualification. For cross-brand alternatives in the same TO-252AA (DPAK) footprint, look at the STMicroelectronics STD30N10F7 (100 V, 30 A) or onsemi NTD6416AN (100 V, 17 A) - both are pin-compatible but with reduced current ratings.
Hey Google, what can replace the IRFR540ZTRLPBF in my design?
The IRFR540ZTRLPBF can be replaced with the Infineon IRFR540ZTRPBF (same die, identical specs, different reel format), or with cross-brand equivalents in the same TO-252AA (DPAK) footprint such as STMicroelectronics STD30N10F7 (slightly lower current) or onsemi NTD6416AN (lower current rating). All share the standard 3-pin DPAK land pattern (gate, drain, source) for drop-in PCB compatibility.
Where to download the IRFR540ZTRLPBF datasheet PDF?
The official IRFR540ZTRLPBF datasheet (IRFR540ZPbf / IRFU540ZPbf family document) is available from Infineon's website as a PDF. Third-party datasheet mirrors exist at Datasheets.com and AllDatasheet. The original International Rectifier document is approximately 368 KB / 11 pages. Reference the manufacturer datasheet for SOA curves, thermal resistance, and avalanche ratings.
Where to find the IRFR540ZTRLPBF pinout?
The IRFR540ZTRLPBF pinout for the TO-252AA (DPAK) package is: Pin 1 = Gate, Pin 2 = Drain (connected to the metal tab/backside), Pin 3 = Source. The exposed metal tab is electrically the Drain. When mounting, the tab should be soldered to a copper pad for thermal dissipation. Refer to the manufacturer datasheet pin configuration diagram for visual orientation.
What are the key specifications of IRFR540ZTRLPBF that engineers should know?
The IRFR540ZTRLPBF is a 100 V, 35 A N-channel HEXFET® power MOSFET in a TO-252AA (DPAK) surface-mount package. Key parameters: RDS(on) = 28.5 mΩ max at VGS = 10 V, continuous ID = 35 A, pulsed IDM = 110 A, total gate charge Qg = 39 nC, max power dissipation 91 W at TC, and AEC-Q101 automotive qualification. Operating junction temperature spans -55 °C to +175 °C. Source: Infineon product page and DigiKey listing.

Engineering reference data for IRFR540ZTRLPBF — comparison, design guidance, and compliance information.

Selection Guide

Choose the IRFR540ZTRLPBF when you need an AEC-Q101-qualified, 100 V N-channel MOSFET in a surface-mount DPAK package with 35 A continuous current capability and 28.5 mΩ max RDS(on). It is the optimal choice for 48 V automotive ECU power stages, industrial motor drives, and telecom 48 V-input DC-DC converters. Select the IRFR540ZTRPBF if you don't need the 800-piece leader/trailer reel format. Choose the AUIRFR540Z for explicit automotive-grade applications requiring stringent traceability. For cross-brand alternatives, the STD30N10F7 (STMicroelectronics) is suitable for designs with 30 A continuous current budget, while the IRFR3710Z is a viable same-Infineon substitute when the IRFR540Z is unavailable.

Comparison with Alternatives

Parameter This Product IRFR540ZTRPBF IRFR540ZPBF IRFU540ZPBF AUIRFR540Z IRFR3710Z STD30N10F7
Brand Infineon Infineon Infineon Infineon Infineon Infineon STMicroelectronics
Package TO-252AA (DPAK) TO-252AA (DPAK) - same TO-252AA (DPAK) - same TO-251AA (IPAK, through-hole) TO-252AA (DPAK) - same TO-252AA (DPAK) - same TO-252AA (DPAK) - same
Drain-Source Voltage (VDS) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Continuous Drain Current (ID) 35 A 35 A 35 A 35 A 35 A 30 A 30 A

Key Differentiators

  • AEC-Q101 automotive qualification with 175 °C max junction temperature (vs IRFR540ZTRPBF)
  • 35 A continuous drain current vs lower-rated cross-brand equivalents (vs STD30N10F7)
  • Lower RDS(on) and higher pulsed current capability than industry-standard IRF540 (vs IRF540 (legacy 1970s design))

Design Notes

Estimated: at VGS=10V, ID=20A continuous, RDS(on)=28.5 mΩ, conduction loss ≈ 11.4 W. With a 1 sq-inch copper pour on a 4-layer FR4 PCB, theta_JA is approximately 50 °C/W, yielding a junction temperature rise of roughly 145 °C at TA=70 °C, exceeding the 175 °C max rating. For continuous 20 A operation, either reduce current to ~15 A, increase PCB copper area to 2+ sq inches, or attach a small clip-on heatsink. The DPAK tab must be soldered to the thermal land with sufficient via stitching for heat transfer to inner layers.

Minimize parasitic inductance in the power loop (drain-source switching loop) by keeping the input capacitors, MOSFET drain, and source return paths as compact as possible - typically a 5 mm × 5 mm loop area. Use a 4-layer PCB with a dedicated ground plane directly under the DPAK footprint. Gate drive traces should be at least 0.5 mm wide and routed away from drain node transients to avoid capacitive coupling-induced false triggering. Place a 10 kΩ gate-source pull-down resistor (low-side) or 100 kΩ (high-side via charge pump) to prevent unwanted turn-on during supply transitions.

Do not exceed VGS = ±20 V (gate-source absolute maximum). The IRFR540ZTRLPBF is a standard-threshold (not logic-level) MOSFET and requires at least 6-8 V to achieve low RDS(on); driving it with 3.3 V logic without a gate driver will leave it in the linear region with very high losses. For 48 V automotive load-dump protection, add a TVS clamp (e.g., 90 V bidirectional) at the drain node to limit transient peaks below the 100 V BVDSS rating. Verify avalanche energy rating for repetitive inductive switching applications.

For switching frequencies above 50 kHz, gate-loop inductance becomes critical. A 10 nH gate loop combined with 39 nC Qg produces a voltage spike of V = L × dI/dt that can overshoot the VGS maximum during fast turn-off. Use a gate-drive resistor (10-47 Ω) in series with the gate to dampen ringing, and place a small ferrite bead or 10 Ω gate-source resistor if oscillation persists. The IRFR540ZTRLPBF's internal gate resistance is low, so external damping is essential in half-bridge configurations where cross-conduction could destroy the device.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliant per PBF suffix. AEC-Q101 automotive qualified per Xecor comparison data. Lead-free (Pb-free) confirmed by part number suffix. Halogen-free status not explicitly stated in verified data - marked unknown.

Data verified on: 2026-09-15 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Infineon Infineon Technologies IRFR540ZTRLPBF IRFR540Z IRFR540ZTRPBF IRFR540ZPBF IRFU540ZPBF AUIRFR540Z IRFR3710Z STD30N10F7 STMicroelectronics N-channel MOSFET HEXFET IR MOSFET TO-252AA DPAK AEC-Q101 automotive qualification BVDSS RDS(on) gate charge drain current synchronous rectifier hot-swap controller motor drive RoHS Pb-free lead-free tape and reel
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