MOSFET
제품 (1294)
CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD
The Cambridge GaN Devices CGD65A055SH2 is a 650 V, 55 mΩ enhancement-mode GaN-on-silicon power transistor from the ICeGaN® H2 family, integrating ICeGaN® gate technology, integrated current-sense, and NL³ (no-leakage, low-loss) circuitry in a 16-DFN (8x8) surface-mount package. It delivers a continuous drain current of 27 A at 25 °C, gate charge of 4 nC at VGS = 12 V, and switching speeds an order of magnitude faster than silicon MOSFETs at the same R_DS(on). A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power semiconductor that exploits the high electron mobility and high critical electric field of GaN to deliver lower on-resistance per unit area, lower switching losses, and higher switching frequencies than equivalent silicon MOSFETs. The CGD65A055SH2 belongs to the discrete semiconductors > MOSFETs category and is increasingly used as a silicon-MOSFET replacement in switched-mode power conversion. Key features include a 650 V drain-source breakdown rating, integrated current sensing that eliminates external sense resistors, an embedded NL³ circuit that suppresses unwanted turn-on and reduces parasitic-induced losses, and an ICeGaN® interface that provides a clean, well-defined gate drive behavior despite GaN's normally-on heritage. The 16-DFN (8x8) package offers an exposed thermal pad for low junction-to-PCB thermal resistance and is fully compatible with surface-mount reflow assembly. Technically, the device uses a GaN-on-silicon epi structure with a normally-off cascode-style gate arrangement, achieving clean threshold behavior near 1-2 V typical with a recommended drive level of VGS = 12 V. The integrated current-sense pin mirrors a portion of drain current to an external resistor for cycle-by-cycle or average-current control, simplifying implementation of OCP/OCM without the cost, footprint, or noise penalty of a discrete shunt. Typical applications include AC-DC totem-pole PFC stages in EV chargers, server SMPS primary-side switches, industrial motor drives, Class-D audio amplifiers, photovoltaic micro-inverters, and USB-PD adapters above 100 W. Where efficiency and power density are paramount, the CGD65A055SH2's combination of low R_DS(on), low Qg, and integrated features removes several passive components from the BOM. When designing with this part, gate-drive discipline is critical: use a clean 12 V supply with low impedance and tight dv/dt control to avoid unwanted Miller-induced turn-on. Pair the CGD65A055SH2 with a properly sized thermal copper pour to take advantage of the low RDS(on) at high currents, and always reference the manufacturer layout guidelines for source-inductance minimization. This page synthesizes distributor pricing, drop-in alternatives, and practical GaN-specific design notes not found in the manufacturer datasheet, giving power engineers a single source for selection, sourcing, and application guidance.
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
The Cambridge GaN Devices CGD65A130S2 is a 650V, 130 mΩ enhancement-mode GaN-on-silicon power transistor housed in a DFN-16 (8×8 mm) surface-mount package. It is engineered to deliver high current capability, high breakdown voltage, and high switching frequency for demanding power-conversion applications where silicon MOSFETs are increasingly limited by their switching-loss floor. What is a GaN HEMT? A Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a wide-bandgap power device in which a two-dimensional electron gas (2DEG) is formed at the AlGaN/GaN heterojunction. Compared to silicon MOSFETs, GaN HEMTs offer higher electron mobility, lower output capacitance, zero reverse-recovery charge, and roughly an order-of-magnitude lower gate charge, enabling much smaller and more efficient switched-mode power supplies. Within the power-semiconductor hierarchy, GaN HEMTs sit between traditional silicon MOSFETs and emerging SiC MOSFETs, and they belong to the wider class of wide-bandgap (WBG) semiconductors. The CGD65A130S2 features CGD's proprietary ICeGaN™ gate technology, which delivers a robust gate structure tolerant to wide gate-drive swings (typically up to ±20 V on the gate) and is compatible with virtually all standard gate drivers and controller ICs. Designers can therefore drop this part into existing silicon-MOSFET footprints without redesigning the gate-drive circuitry. The device integrates current-sense and Miller-clamp (NL³) functionality that simplifies protection design in half-bridge and full-bridge topologies. Designed for high-frequency operation up to several hundred kHz with minimal switching loss, the CGD65A130S2 enables substantial reductions in magnetics size, output-capacitor count, and heatsink mass in AC-DC, DC-DC, and PFC converters. The 650V rating provides generous derating margin when fed from 400V PFC rails typical of universal-input offline converters, and the low gate charge and zero Qrr translate directly into higher efficiency at elevated switching frequencies. Typical applications include totem-pole bridgeless PFC front ends for server and telecom SMPS, high-frequency LLC and hard-switched half-bridge converters in industrial PSUs, EV on-board chargers (OBCs) and DC-DC stages, Class-D audio amplifiers, and compact USB-PD chargers and adapters. Designers targeting >200 kHz operation benefit most from the CGD65A130S2's low charge figures. When designing with this part, ensure the gate-drive negative rail stays within the ICeGaN datasheet absolute maximums and respect the exposed-pad PCB-layout recommendations to keep the channel-to-ambient thermal resistance (RθJA) low enough for continuous high-current operation. This page synthesizes distributor pricing, drop-in alternative recommendations, and practical design notes not found in the Cambridge GaN Devices datasheet alone — combining first-party manufacturer specifications with curated engineering guidance for accelerated design-in.
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
The Cambridge GaN Devices CGD65A130SH2 is an enhancement-mode GaN-on-silicon power transistor rated at 650 V drain-to-source voltage and 12 A continuous drain current, with a typical on-resistance of 55 mΩ, housed in a 16-pin DFN (8x8 mm) surface-mount package with exposed thermal pad. The device uses CGD's proprietary ICeGaN® gate technology, which provides a 5 V gate-threshold compatibility window so that the part can be driven directly by virtually any standard Si MOSFET gate driver or controller without negative bias or special gate-driver circuitry. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor that uses an AlGaN/GaN heterostructure to form a two-dimensional electron gas (2DEG) channel. Compared with silicon MOSFETs, GaN HEMTs offer dramatically lower output capacitance, near-zero reverse-recovery charge, and switching speeds in the MHz range, making them suited for high-frequency, high-density power conversion. The CGD65A130SH2 sits in the power-management hierarchy as a discrete GaN switch used as the main power element in high-frequency switched-mode power supplies (SMPS), motor drives, and photovoltaic inverters. Key features of the CGD65A130SH2 include 650 V drain-source breakdown, 55 mΩ typical R_DS(on), ICeGaN® compatibility with standard 5 V gate drivers, integrated current-sense (CS) pin, and the NL³ (Non-Linear Loss Limiting) circuit that maintains low drive losses even at very high switching frequencies. The wide gate-threshold window and built-in current sensing simplify layout by reducing the need for external shunt resistors and isolated gate-drive bias supplies. Typical application circuits include 65 W to 500 W USB-PD chargers, totem-pole PFC (power factor correction) front ends for server and telecom rectifiers, half-bridge LLC and quasi-resonant converters for high-density AC/DC adapters, photovoltaic micro-inverters, and motor-drive half-bridges. The integrated current-sense output also enables cycle-by-cycle current limiting and over-current protection without an external shunt. This page synthesises distributor pricing, distributor stock, drop-in alternatives analysis, and CGD reference-design guidance that complement the manufacturer datasheet. When designing with CGD65A130SH2, ensure the gate-driver pull-up meets the ICeGaN® gate-charging requirements and that the PCB returns have low inductance to control ringing in the MHz switching range. The 16-DFN exposed pad must be soldered to a sufficient copper pour to keep R_DS(on) stable and junction temperature within rated limits.
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
The Cambridge GaN Devices CGD65B130S2 is an enhancement-mode GaN-on-silicon power transistor that exploits the unique material properties of gallium nitride to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications. The part is rated at 650 V drain-source voltage, 130 mΩ on-resistance (typical), with 12 A continuous drain current capability, housed in an 8-pin DFN 5x6 mm surface-mount package with an exposed thermal pad. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor that uses an AlGaN/GaN heterostructure to form a high-mobility two-dimensional electron gas (2DEG) channel. Compared to silicon MOSFETs, GaN HEMTs offer 10x higher breakdown field strength, lower on-resistance per unit area, zero reverse-recovery charge (Qrr), and sub-nanosecond switching capability. The CGD65B130S2 belongs to the discrete GaN FET category within the broader power semiconductor hierarchy: GaN HEMT → wide-bandgap transistor → power transistor → discrete semiconductor. Key features include CGD's proprietary ICeGaN™ gate technology that allows the device to be driven directly by virtually any standard gate driver or controller IC without negative bias or external protection circuits. The transistor delivers sub-nanosecond rise/fall times, eliminating the need for gate-drive transformers in many designs. The DFN 5x6 package provides an ultra-low thermal resistance path via the exposed pad, supporting sustained high-current operation. Zero Qrr enables hard-switched half-bridge topologies without the reverse-recovery losses that plague silicon MOSFETs. The architecture combines a normally-off enhancement-mode GaN-on-Si stack with integrated ESD protection and a robust gate clamp, simplifying inverter and PFC design. Compared to equivalent 650V silicon MOSFETs, the CGD65B130S2 reduces switching losses by approximately 50-70 percent, enabling higher switching frequencies (500 kHz to 1 MHz) and smaller magnetics. The device is suitable as a drop-in upgrade path for designers seeking efficiency gains over legacy superjunction MOSFETs. Typical applications include 65W to 500W AC-DC power supplies, totem-pole PFC circuits, LLC and QR flyback converters for USB-PD adapters, photovoltaic microinverters, audio amplifiers, and synchronous rectification in telecom / server PSUs. The high frequency capability is especially valuable in compact USB-PD 3.1 chargers where power density is paramount. When designing with this device, ensure the gate drive swings between 0 V and 10-12 V with minimal overshoot, and keep the high-current power loop (DC+ → high-side FET → low-side FET → DC-) as tight as physically possible to minimize parasitic inductance. Use a Kelvin source connection when available to keep the gate-drive loop separate from the high-current path. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not typically found in the manufacturer datasheet alone.
CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN
The Cambridge GaN Devices CGD65B130SH2 is an enhancement-mode N-channel GaN-on-silicon power transistor rated at 650 V with 12 A continuous drain current, housed in a surface-mount 8-DFN (5x6 mm) package. The datasheet names a 650 V drain-to-source breakdown with on-resistance of 55 mΩ typical (182 mΩ max RDS(on) at 900 mA / 12 V per secondary listing), giving it the figure of merit of synchronous and resistive losses that GaN HEMTs are prized for. Integration includes the ICeGaN® gate driver interface, NL³ non-linear circuit protection, and on-chip current sensing. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor whose two-dimensional electron gas (2DEG) channel delivers far higher switching speed, lower gate charge, and lower on-resistance per area than silicon MOSFETs of the same voltage class. The CGD65B130SH2 belongs to the power semiconductor family, sitting in the power management hierarchy between low-voltage logic MOSFETs (sub-200V) and high-voltage SiC MOSFETs (typically >900V). It is engineered as a normally-off enhancement-mode device for easy drop-in replacement of silicon superjunction MOSFETs in 400 V and 500 V bus designs. Per the manufacturer datasheet, the CGD65B130SH2 specifies 12 A continuous drain current at 25°C, total gate charge Qg = 1.9 nC, gate threshold voltage of 2.2 V to 4.2 V, and RDS(on) range of 130 to 350 mΩ across drive and temperature conditions. The 650 V rating provides substantial derating margin for universal-input PFC stages operating from rectified 230 VAC mains, where bus voltages reach 400 V. The 8-DFN (5x6) package with bottom-side cooling pad supports high-density surface-mount reflow and reduces parasitic source inductance, which is critical for clean switching at >100 kHz. The architecture exploits GaN's high critical electric field and 2DEG channel mobility to achieve low conduction and switching losses simultaneously, enabling hard-switched topologies such as totem-pole PFC and LLC converters to operate at multi-hundred-kHz frequencies without the thermal penalties imposed by silicon superjunction MOSFETs. The integrated current-sense and NL³ protection circuits reduce external component count in motor-drive and synchronous-rectification applications. Typical applications include AC-DC and DC-DC converters, totem-pole bridgeless PFC front ends, server and telecom switched-mode power supplies, photovoltaic micro-inverters and string inverters, on-board chargers for electric vehicles, motor drives, and class-D audio amplifiers. When designing with this part, confirm gate-drive voltage of 12 V is available and place the gate drive loop return directly under the source connection. Decouple the gate-driver supply locally and follow Cambridge GaN Devices' reference layout for the 8-DFN (5x6) footprint. This page consolidates distributor pricing, drop-in alternatives, and application guidance beyond what the manufacturer datasheet alone provides, helping engineers shorten their selection cycle for 650 V GaN power stages.
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
The Cambridge GaN Devices CGD65B240SH2 is an enhancement-mode GaN-on-silicon power transistor rated at 650 V drain-source breakdown with 55 mΩ on-resistance, packaged in an 8-pin DFN (5x6 mm) surface-mount package with exposed thermal pad. A GaN HEMT (Gallium-Nitride High-Electron-Mobility Transistor) is a wide-bandgap power transistor that exploits a two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterojunction to deliver much higher switching speeds, lower conduction losses, and smaller dead-time than silicon MOSFETs of equivalent breakdown class. Within the wider power-semiconductor taxonomy, this part sits in the GaN transistor family, which itself belongs to the discrete-semiconductor -> wide-bandgap power-device -> high-electron-mobility transistor branch. CGD's proprietary ICeGaN® gate-injection technology sits on top of this material advantage and gives the part a 0-20 V gate-drive window compatible with virtually all standard gate-driver and PWM-controller ICs - no negative rail required. Key features of the CGD65B240SH2 include: an integrated current-sense (CS) output that removes the need for an external shunt resistor, a built-in non-linear loss-less circuit (NL³) that absorbs the otherwise-hard-snubber loss path, 7 A continuous drain current, and a Kelvin source pin for clean gate-drive return. The 8-DFN (5x6) package provides a low thermal-resistance path and is suitable for high-frequency SMPS, adapters, and PFC front-ends where every milliwatt of switching loss matters. From an architectural standpoint, the part uses CGD's ICeGaN® monolithically-integrated gate structure to enable direct drive from 12 V logic-level controllers and from legacy 6 V-10 V Si-MOSFET drivers without level-shift hardware. The current-sense pin delivers a voltage proportional to drain current with typical bandwidth in the MHz range, enabling cycle-by-cycle over-current protection in digital and analog controllers. Typical applications include 65 W quasi-resonant flyback USB-PD adapters, totem-pole bridgeless PFC stages, single-stage active-clamp flybacks for monitors and notebooks, server auxiliary supplies, and industrial SMPS where 200 kHz - 500 kHz hard-switching topologies benefit from GaN's figure-of-merit (FOM = R_DS(on) × Q_G). According to Würth Elektronik's reference design, this part is used in a 65 W quasi-resonant flyback converter platform. When designing with this part, pay particular attention to PCB layout: keep the high-current power-loop area below 1 cm² and place the gate-drive return directly to the Kelvin source pin - using the power source instead can cause gate-oscillation at dV/dt above 50 V/ns. The integrated NL³ circuit must still see the correct drain-sense pad routing described in the manufacturer datasheet. This page synthesizes drop-in alternatives, distributor stock, and engineering guidance beyond the raw manufacturer datasheet.
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
The Cambridge GaN Devices CGD65C025SP2 is a 650 V, 25 mΩ enhancement-mode GaN-on-Si power transistor housed in a surface-mount wettable-flank BHDFN-9-1 package. It is rated for 60 A continuous drain current and leverages CGD's proprietary ICeGaN® gate technology for normally-off operation without the need for a negative gate drive rail. The wide 650 V drain-source breakdown rating and low on-resistance make it suitable for high-frequency, high-density power conversion stages where silicon MOSFETs and IGBTs leave significant efficiency on the table. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor that uses a two-dimensional electron gas channel formed at an AlGaN/GaN heterojunction to deliver far higher switching speeds and lower specific on-resistance than equivalently rated silicon MOSFETs. Within the broader power semiconductor hierarchy, the GaN HEMT sits alongside Si MOSFETs, SiC MOSFETs, and IGBTs as the high-frequency, high-efficiency option for sub-kilowatt to several-kilowatt switched-mode power supplies, motor drives, and photovoltaic inverters. Key features highlighted in the Cambridge GaN Devices preliminary datasheet include 650 V drain-source breakdown, a typical R_DS(on) of 25 mΩ, 60 A continuous drain current capability, a wettable-flank BHDFN-9-1 surface-mount package for optical-inspection-friendly assembly, and fast turn-on characteristics that enable high-frequency operation and easy paralleling of multiple devices for higher current. The normally-off ICeGaN gate removes the negative-bias supply typically required by cascode or depletion-mode GaN implementations, simplifying gate-driver design. Typical applications span telecom and server AC-DC and DC-DC converters, USB-PD and high-density laptop adapters, on-board chargers for electric vehicles, photovoltaic micro-inverters and string inverters, motor-drive front-end PFC stages, and Class-D audio amplifiers. The combination of 650 V rating and 25 mΩ R_DS(on) also makes this part attractive for 400 V bus architectures in EV traction inverters and energy-storage systems. When designing with the CGD65C025SP2, prioritize keeping the power loop inductance below the datasheet-recommended budget by minimizing the source-return copper area between the device and the DC-link capacitance, and follow the manufacturer's recommended gate-drive voltage window for ICeGaN to avoid overdrive. This preliminary datasheet page synthesizes distributor availability data, drop-in alternatives, and PCB design considerations drawn together for engineers evaluating GaN for high-density power conversion.
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
The Cambridge GaN Devices CGD65C055SP2 is a 650 V, 27 A enhancement-mode GaN-on-Si power HEMT housed in a 9-pin bottom-side-cooled wettable-flank BHDFN-9-1 package. It is built on CGD's proprietary ICeGaN gate technology, which delivers a 3 V threshold voltage, genuine 0 V turn-off, and a broad 9-20 V gate-drive voltage range. The device is designed for high-current, high-frequency switching where silicon MOSFETs run out of headroom, with a 55 mΩ on-resistance rating. A GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) is a wide-bandgap semiconductor switch in the discrete-semiconductor hierarchy: GaN HEMT -> power transistor -> discrete semiconductor. Compared with silicon MOSFETs, GaN HEMTs offer much lower gate charge, zero reverse-recovery charge, and an order-of-magnitude lower switching loss, enabling higher switching frequencies (hundreds of kHz to MHz) without the efficiency penalty seen in Si. Cambridge GaN Devices (CGD) specialises in normally-off, enhancement-mode GaN with a robust gate interface that does not require a negative rail to keep the device off. Key differentiating features include an integrated Miller clamp that suppresses false turn-on during fast transients, a wettable-flank BHDFN package for optical-inspection-friendly solder joints, and a thermal pad on the bottom side for direct PCB cooling. The 55 mΩ R_ds(on) at room temperature keeps conduction loss competitive with 600-650 V Si MOSFETs of similar die area, while the lower Qrr and Q_oss translate directly into reduced reverse-conduction loss in hard-switched half-bridges and totem-pole PFC stages. Typical applications include telecom and server SMPS, on-board chargers for EVs, solar inverters, totem-pole PFC front stages, motor drives, and Class-D audio amplifiers. The 650 V rating provides ample margin over 400 V PFC rails (European rectified mains) and 380 V nominal solar-bus voltages. When designing with this part, place a tight gate-drive loop (gate driver to gate-return) within 5 mm to minimise parasitic inductance that could otherwise cause Miller-induced dv/dt failures. Use a 0 V off-state gate bias for ICeGaN parts to leverage the genuine zero-volt turn-off specified in the datasheet, and consult the CGD application note on dead-time optimisation for half-bridges. This page synthesises distributor pricing, drop-in alternative recommendations, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for the CGD65C055SP2.
CMUDM8004 - 30V 450mA P-Ch SOT-523 MOSFET | Central Semiconductor
The Central Semiconductor CMUDM8004 is a surface mount P-channel enhancement-mode silicon MOSFET rated for 30 V drain-source voltage, 450 mA continuous drain current, and 250 mW power dissipation, housed in the compact SOT-523 (SC-75 style) package. It is manufactured using the P-channel DMOS process and is designed for high-speed pulsed amplifier and driver applications. A MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor switch and amplifier element that sits at the heart of modern power management. Within the component hierarchy, the CMUDM8004 belongs to the discrete small-signal MOSFET family: transistor -> field-effect transistor (FET) -> MOSFET -> P-channel enhancement-mode small-signal MOSFET. Enhancement-mode P-channel devices turn on when the gate is driven below the source, which simplifies high-side switch topologies. Key features of the CMUDM8004 include low on-state resistance (low rDS(on)), a low threshold voltage that makes the device logic-level compatible, halogen-free construction by design, and a very small SOT-523 surface mount footprint for dense PCB layouts. The datasheet also identifies a complementary N-channel MOSFET, the CMUDM7004, enabling push-pull and half-bridge style driver stages from a matched pair. Technically, the DMOS process provides a short, vertical channel structure that yields fast switching transitions, low gate charge behavior for a small-signal part, and stable threshold characteristics. The P-channel polarity allows direct high-side switching without a floating gate driver in low-voltage rails, which is a common simplification in portable and battery-powered electronics. Typical applications cited in the manufacturer datasheet include load and power switches and power supply converter circuits. The device is also suited to high-side load switching in battery-powered portable equipment, level-shifted driver stages, and pulsed amplifier circuits where fast rise and fall times are required within the 450 mA current envelope. When designing with this part, verify the gate drive level against the low threshold voltage specification to guarantee full enhancement at the lowest supply rail, and observe the 250 mW dissipation limit to stay within safe operating temperature. This page synthesizes distributor pricing and availability data, complementary part information, and practical design notes not found in the manufacturer datasheet alone.
CMUDM8004-TR-PBFREE - 30V 450mA P-Channel MOSFET | Central Semiconductor
The Central Semiconductor CMUDM8004-TR-PBFREE is a P-channel enhancement-mode silicon MOSFET rated for 30 V drain-source voltage and 450 mA continuous drain current at 25 C ambient, with 250 mW power dissipation, housed in a compact 3-pin SOT-523 surface-mount package. It is a lead-free (PBFREE) small-signal power transistor intended for low-side and high-side switching in space-constrained designs. A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate-source voltage is pulled below the source potential by at least the threshold voltage. Within the power management hierarchy, small-signal MOSFETs such as this device sit between discrete bipolar junction transistors and larger power MOSFETs, offering voltage-driven, essentially gate-current-free switching for load-switch and power-path control functions. Key differentiating features include a low threshold voltage, which allows direct drive from low-voltage logic and microcontroller GPIO outputs without level-shifting circuitry, and the P-channel polarity, which simplifies high-side load switching because the gate can be pulled to ground to turn the device on, with the source tied to the positive supply rail. The 30 V rating comfortably covers 5 V, 12 V, and 24 V rail systems. Fabricated as an enhancement-mode silicon MOSFET, the device provides normally-off behavior: with zero gate-source bias it blocks current, a fail-safe characteristic preferred over depletion-mode devices in power switching. The small SOT-523 footprint minimizes board area for high-density portable and battery-powered designs, while the PBFREE suffix confirms lead-free, RoHS-aligned construction for global compliance. Typical applications named in the manufacturer datasheet are load and power switches and power supply converter circuits, where the device serves as a high-side switch, reverse-polarity protection element, or power-path controller in portable electronics, battery-powered equipment, and small DC-DC converter stages. A key design consideration: because the package dissipates only 250 mW at 25 C ambient, verify that I-squared-R conduction losses plus switching losses remain within this limit across the full temperature range, derating as ambient temperature rises. This page synthesizes distributor pricing, availability, and datasheet-derived design guidance for the CMUDM8004-TR-PBFREE in one place, adding cross-reference and selection context beyond the raw manufacturer datasheet.
CPM3-10000-0300A - 10kV/305mΩ SiC Bare Die MOSFET | Wolfspeed
The Wolfspeed CPM3-10000-0300A is a 10 kV (10,000 V) N-channel silicon carbide (SiC) power MOSFET supplied as a Bare Die, featuring a typical on-state resistance (RDS(on)) of 305 mΩ at 20 A and engineered around Wolfspeed's third-generation C3M SiC MOSFET technology. It is rated for 20 A continuous drain current and 10000 V drain-to-source breakdown voltage in an industrial-grade, die-only form factor suitable for direct die attach. What is a SiC MOSFET? A silicon carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor that switches much faster and sustains higher blocking voltages than silicon MOSFETs or IGBTs, with lower switching losses and higher thermal tolerance. Within the power-semiconductor taxonomy, the CPM3-10000-0300A sits as: SiC MOSFET → power MOSFET → discrete semiconductor → power management. The 10 kV class eliminates multi-level converter stages in medium-voltage applications. Key features include a 305 mΩ typical RDS(on) at 20 A, 10000 V drain-source voltage rating, and 20 A continuous drain current. The device supports gate threshold voltage of approximately 2.8 V (per third-party benchmark) and offers AEC-Q100-style industrial qualification suitable for traction, grid-tie, and industrial motor drive environments. The bare-die format allows hybrid module integration with minimum parasitic inductance. The C3M third-generation SiC process enables a thinner drift layer and superior switching figure of merit (RDS(on) × Qg) compared to the prior generation. The 8.1 × 8.1 mm² die footprint is consistent with the companion QPM3-10000-0300A qualification sample, easing dual-sourcing of engineering samples. Typical applications include medium-voltage motor drives (3.3 kV/6.9 kV class), solid-state transformer (SST) primary bridges, traction auxiliary converters, grid-tie photovoltaic inverters above 1500 V DC, and pulsed-power / high-voltage DC transmission. The bare die form factor targets hybrid power module assemblies where minimum loop inductance is critical. Designers should evaluate thermal-stack design (DBC substrate, sintered or soldered attach) and gate-driver placement within millimeters of the die to limit parasitic inductance. Pairing this device with a compatible isolated gate driver (e.g., ±20 V capable, 15-25 V recommended) is required to remain within the datasheet SOA. This page synthesizes distributor pricing context, drop-in alternatives, and practical design notes not found in the bare-die datasheet alone.
CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments
The Texas Instruments CSD13302W is a 12V N-channel NexFET power MOSFET in a 1mm x 1mm wafer-level package (WLP), designed for space-constrained applications requiring low on-resistance and gate charge. It delivers a maximum continuous drain current of 1.6A at 25°C ambient and features an ultra-low on-resistance of 14.6mΩ (typical) at VGS=4.5V, making it ideal for load switching, battery protection, and power management in portable electronics. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between drain and source terminals via an insulated gate voltage. The CSD13302W is an enhancement-mode N-channel device, meaning it requires a positive gate-to-source voltage to conduct. As a discrete semiconductor, it belongs to the MOSFET family, which is a subset of transistors, which are fundamental building blocks in electronic circuits. Key features of the CSD13302W include a low gate charge (Qg) of 4.1nC at VGS=4.5V, which enables fast switching and reduces driver losses. The device also offers excellent thermal performance with a power dissipation of 1.8W at 25°C ambient, and it is RoHS compliant and lead-free. The 4-DSBGA (1x1) package provides a compact footprint with a height of only 0.4mm, suitable for ultra-thin designs. Technically, the CSD13302W utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and gate charge simultaneously. This results in a figure of merit (RDS(on) x Qg) that is competitive in its class. The device is designed for low-voltage applications up to 12V, with a maximum gate-source voltage rating of ±8V. It also features an integrated ESD protection diode, enhancing robustness in handling. Typical applications include load switches in smartphones, tablets, and wearables, where the small package and low on-resistance minimize power loss and PCB area. It is also used in battery management systems for overcurrent protection and in DC-DC converter synchronous rectification stages. The low threshold voltage (VGS(th) of 0.9V) allows direct driving from low-voltage logic. When designing with the CSD13302W, ensure that the gate drive voltage is sufficient to fully enhance the channel (recommended VGS=4.5V) to achieve the lowest on-resistance. Also, consider the thermal path: the WLP package relies on the PCB copper for heat spreading, so adequate thermal vias and copper area are necessary for high-current operation.
CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments
The CSD15571Q2 is a 20-V N-channel NexFET power MOSFET from Texas Instruments, housed in a compact 6-pin WSON (DQK) package measuring 2 mm x 2 mm. It features a low on-resistance of 19.2 mΩ and supports a continuous drain current of 22 A at 25°C, making it suitable for high-density power management applications. A power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in switching power supplies, load switches, and battery protection circuits, where efficient switching and low conduction losses are critical. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the CSD15571Q2 include a low gate charge (Qg) for fast switching, a low thermal resistance enabling efficient heat dissipation, and a compact footprint that saves board space. The device is RoHS compliant and lead-free, meeting environmental standards. Its 20-V drain-source voltage rating and 22-A current capability make it ideal for low-voltage, high-current applications. Technically, the CSD15571Q2 utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and reduced switching losses. The device has a maximum power dissipation of 2.5 W at 25°C, and its thermal performance is enhanced by the exposed pad in the WSON package. The gate threshold voltage is typically 1.1 V, allowing logic-level drive. Typical applications include load switching in portable devices, DC-DC converter synchronous rectification, battery protection circuits, and power distribution in industrial systems. The low on-resistance minimizes conduction losses, while the small package enables compact designs. When designing with this MOSFET, ensure adequate gate drive voltage to fully enhance the channel and minimize on-resistance. Also, consider the thermal path: the exposed pad should be soldered to a copper area for effective heat sinking, especially at high currents.
CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI
The Texas Instruments CSD17303Q5 is a 30V N-channel NexFET power MOSFET in the 8-pin VSON-CLIP (DQH) package measuring 5 mm x 6 mm. It delivers up to 32A at 25C ambient (100A at case temperature) with an ultra-low on-resistance of 2.6 mOhm and 3.2W power dissipation at Ta. A power MOSFET is a voltage-controlled semiconductor switch used in the power management hierarchy above gate drivers and below controllers in DC-DC conversion systems. The CSD17303Q5 belongs to TI's NexFET family of optimized MOSFETs for high-efficiency switching power supplies. Key features include optimization for 5V gate drive, ultra-low total gate charge (Qg) and gate-drain charge (Qgd) for fast, efficient switching, avalanche rating for ruggedness, and low thermal resistance enabled by the VSON-CLIP package with exposed clip-bonded pad. The Pb-free terminal plating is RoHS compliant and halogen free per TI datasheet. The NexFET silicon process achieves a superior figure of merit (Rds(on) x Qg), reducing both conduction and switching losses. In synchronous buck converters the CSD17303Q5 is typically used as the control FET, where low Qgd minimizes switching transition losses, while its 2.6 mOhm Rds(on) keeps conduction losses low at high output currents. The 30V rating suits 12V and intermediate bus inputs with margin for transients. Typical applications include notebook point-of-load converters and synchronous buck stages in networking, telecom, and computing systems. The -55C to +150C operating range supports demanding industrial environments. Design tip: verify Vgs derating when driving below 5V, since Rds(on) rises at reduced gate voltage, and maximize copper area on the drain pad to exploit the low thermal resistance of the VSON-CLIP package. As of 2026-08-30, pricing starts around $2.09 at LCSC.
CSD17484F4 - 30V N-Ch FemtoFET MOSFET 3A | Texas Instruments
The Texas Instruments CSD17484F4 is a 30V N-channel NexFET power MOSFET in the ultra-small 3-PICOSTAR (1.0 mm x 0.6 mm) LGA package. Built on TI FemtoFET technology, it delivers 99 mOhm typical on-resistance (128 mOhm max) and up to 3A continuous drain current with 500 mW power dissipation, specifically optimized to minimize footprint in handheld and mobile applications. A power MOSFET is a three-terminal voltage-controlled semiconductor switch used to regulate or switch power in electronic systems. Within the hierarchy of power management components - power management IC to discrete power transistor to small-signal MOSFET - the FemtoFET family occupies the small-signal segment, replacing standard small-signal MOSFETs while providing at least a 60% reduction in footprint size. Key features include the 30V drain-to-source rating suitable for single-cell and multi-cell battery stacks, low gate charge for fast switching with limited drive current, a low gate threshold voltage for 1.8V-2.5V logic-compatible drive, and integrated gate ESD protection that improves assembly robustness on automated SMT lines. The NexFET process technology balances RDS(on) against gate charge, achieving low conduction loss at modest loads while keeping total switching energy low. Because the PICOSTAR LGA package has extremely small thermal mass, PCB copper area is the primary thermal path and must be designed accordingly. Typical applications include smartphone and tablet load switches, portable battery-powered devices, wearable electronics, and low-side switching in compact industrial sensor nodes where board area is the dominant constraint. Design tip: at only 1.0 x 0.6 mm, the land pattern and stencil design directly determine both solderability and RDS(on) performance - follow the TI datasheet (SLPS550) layout recommendations exactly, and verify thermal dissipation with copper pour area rather than assuming package ratings alone.
CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments
The Texas Instruments CSD18503Q5A is a 40-V N-channel NexFET power MOSFET in a single 5 mm x 6 mm SON (VSONP, DQJ) 8-pin surface-mount package, specified at 4.3 mOhm on-resistance (3.4 mOhm typical per the TI datasheet description). It is designed to minimize losses in power conversion applications, supporting 19 A continuous current at 25C ambient (100 A case rating) with 3.1 W (Ta) and 120 W (Tc) power dissipation ratings. A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of converters, motor drives, and load-switch circuits; within the hierarchy of power management semiconductors, it sits alongside IGBTs and analog controllers as a core switching element. The NexFET process technology from TI optimizes the RDS(on) x gate-charge figure of merit, reducing both conduction and switching losses versus older trench MOSFET generations. Key differentiating specifications include the low 4.3 mOhm RDS(on) at 10 V gate drive, a 40 V drain-source rating suitable for 12 V and 24 V input bus systems, the low-profile 5x6 mm SON package with exposed drain pad for low thermal resistance, and an operating junction range of -55C to +150C. The SON footprint also provides excellent PCB thermal spreading through the large exposed drain pad. Typical applications include DC-DC converter power stages, synchronous rectification, motor drive half-bridges, and hot-swap or ORing load switches. In these circuits, the low RDS(on) directly reduces conduction losses and heat-sinking requirements, while the NexFET cell structure keeps switching losses low at high frequency. Design consideration: with 4.3 mOhm on-resistance, conduction loss at high current (e.g., 50 A at 50C junction gives roughly 13.5 W) dominates, so thermal design and copper pour area determine usable current more than the 100 A package case limit. Verify SOA limits for pulsed loads per the TI datasheet (CSD18503Q5A datasheet, TI).
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
The Texas Instruments CSD19534Q5A is a 100 V N-channel NexFET power MOSFET housed in an 8-VSONP (5x6 mm) package, featuring an ultra-low on-resistance of 12.6 mΩ (per TI datasheet description) designed to minimize conduction and switching losses in power conversion applications. The device is rated for 44 A continuous drain current at Tc and supports 3.2 W power dissipation on the standard test board (Ta) and 63 W at Tc, with a VDS of 100 V. As a single N-channel enhancement-mode MOSFET, it uses TI's NexFET technology platform to deliver low Figure-of-Merit (FOM) for high-frequency switching. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals in power electronics. Within the taxonomy hierarchy, MOSFETs belong to transistors -> discrete semiconductors -> semiconductors. The CSD19534Q5A is specifically an N-channel enhancement-mode power MOSFET in the NexFET family, optimized for synchronous rectification, DC-DC conversion, and motor drive applications where low RDS(on) and high current handling are critical. Key specifications include a 12.6 mΩ maximum RDS(on) at VGS = 10 V (per TI datasheet description), 100 V VDS breakdown, and a SON 5 mm x 6 mm package with an exposed pad (VSONP) that provides low thermal resistance for efficient heat dissipation. The gate threshold voltage is in the standard 1-3 V range typical for logic-level NexFET devices. The device is rated for an operating temperature range supporting industrial and automotive environments. The integrated drain-connected exposed pad enables direct PCB thermal coupling. Typical applications include primary-side switching in telecom and server DC-DC converters, secondary-side synchronous rectification in buck topologies, motor drive H-bridges in industrial robotics and e-mobility, battery protection circuits, hot-swap controllers, and load management systems in 48 V distributed power architectures. The 100 V rating provides significant headroom above nominal 48 V rails, allowing safe operation during transient spikes and inductive flyback events. When designing with this MOSFET, ensure that the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge the gate capacitance quickly and minimize switching losses. Place the gate drive loop as compact as possible, with the gate resistor placed close to the gate pin to suppress parasitic ringing and prevent unintended turn-on due to Miller effect. The exposed pad must be soldered to a sufficient copper area to achieve rated thermal performance.
CSD22206W - -8V P-Ch 5A WLP MOSFET | Texas Instruments
The Texas Instruments CSD22206W is a -8V P-channel NexFET power MOSFET in an ultra-small 9-ball DSBGA (WLP) package measuring just 1.5 mm x 1.5 mm. It delivers up to 5A of continuous current (Ta) with an on-resistance of 5.7 mOhm (typ 4.7 mOhm at higher VGS) and a power dissipation of 1.7W (Ta), integrating gate ESD protection for robust handling. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the power management hierarchy, discrete MOSFETs sit below integrated power stages and above gate drivers as the final switching element in load switches, DC-DC converters, and battery-protection circuits. The NexFET family from TI is optimized for the lowest on-resistance and gate charge in the smallest possible outline. Key features include the 1.5 mm x 1.5 mm WLP footprint, which minimizes board area in space-constrained designs; low RDS(on) of 4.7-5.7 mOhm, which reduces conduction losses and heat generation; integrated gate ESD protection, improving assembly reliability; and excellent thermal characteristics enabled by the wafer-level chip-scale package with solder balls acting directly as thermal paths. The NexFET silicon technology balances cell density and ruggedness, achieving very low on resistance and gate charge simultaneously. The ultra-low profile of the DSBGA package suits stacked-board and wearable form factors where height is restricted. The P-channel polarity simplifies high-side load-switch topologies by eliminating the need for a charge pump or bootstrap drive. Typical applications include battery-operated portable electronics, load switches for power rails, power-path management in smartphones and wearables, and small DC-DC converter stages. The -8V rating and 5A capability fit single-cell lithium-ion battery systems. Design with care regarding thermal management: at 1.7W maximum dissipation in a tiny footprint, PCB copper pours under the solder balls are essential. Verify gate-drive voltage levels, as RDS(on) is strongly VGS dependent in this low-voltage device.
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
The Diodes Incorporated DMC2400UV-7 is a complementary pair enhancement-mode MOSFET array integrating one N-channel and one P-channel MOSFET in a single SOT-563 surface-mount package, with 20V drain-to-source voltage rating and continuous drain current of 1.03A (N-channel) and 700mA (P-channel). What is a MOSFET array? A MOSFET array is a single package that contains two or more discrete MOSFET transistors, often configured as a complementary pair (N-channel + P-channel) or as dual N-channel or dual P-channel devices. MOSFET arrays sit within the discrete semiconductor hierarchy of MOSFET -> transistor -> semiconductor device. By co-packaging both polarities, designers can build H-bridges, level shifters, and bidirectional load switches with a single IC footprint, reducing BOM count, parasitic inductance, and PCB area versus using two separate SOT-23 MOSFETs. Key features include low on-state resistance (RDS(on) of 480 mOhm max at VGS = 4.5V, 200mA per the verified web data), low gate threshold voltage below 1V, low input capacitance, fast switching speed, and minimal input/output leakage. The SOT-563 package measures approximately 1.6mm x 1.6mm, making this part suitable for ultra-compact designs. Total package power dissipation is rated at 450mW under standard test conditions, and the device operates across the standard -55C to +150C junction temperature range. The DMC2400UV uses trench MOSFET technology optimized for low RDS(on) while preserving switching performance, making it efficient for high-frequency DC-DC converter stages. The N-channel and P-channel devices share the same die platform, simplifying thermal management and ensuring matched switching characteristics for synchronous-rectifier topologies. Typical applications include load switching in portable electronics, power management in battery chargers, signal-level shifting between rails, audio cross-over switching networks, and miniature DC motor driver stages. The complementary configuration is also commonly used in low-power H-bridge motor drivers and USB load-switch circuits. When designing with this part, pay close attention to gate-drive voltage. Because the gate threshold is below 1V, a 3.3V GPIO can fully enhance the N-channel device; however, designers should confirm adequate VGS for the P-channel at the chosen load current. Place a 100nF ceramic bypass capacitor as close as possible to the common source node to suppress switching transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select and source the DMC2400UV-7 efficiently.
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
The Diodes Incorporated DMN3190LDW-7 is a dual N-channel enhancement-mode MOSFET array rated at 30V VDS and 1A continuous drain current, housed in a 6-pin SOT-363 (SC-70) surface-mount package. The device integrates two low-on-resistance N-channel transistors optimized for high-efficiency power management and fast switching applications in compact portable designs. An N-channel enhancement-mode MOSFET is a voltage-controlled field-effect transistor whose channel conductivity is induced when a positive gate-to-source voltage exceeds the threshold voltage. In dual-MOSFET array packages, two transistors share the same small outline footprint, allowing designers to implement synchronous rectifiers, load switches, or half-bridge stages without doubling PCB area. Such arrays sit within the broader hierarchy of discrete semiconductors > MOSFETs > small-signal MOSFETs > load-switch MOSFETs. Key features include an exceptionally low RDS(ON) that minimizes conduction loss, fast turn-on/turn-off times that reduce switching loss, and a logic-level gate drive threshold compatible with 1.8V-5V microcontroller GPIO. The DMN3190LDW-7 is engineered to deliver superior switching performance while maintaining low on-state resistance, making it ideal where every milliwatt of loss matters. The green-compliant SOT-363 package is fully RoHS compliant and suitable for lead-free reflow profiles up to 260C peak. Typical applications include portable device load switching, battery protection circuits in lithium-ion packs, USB power switching, signal isolation in analog front-ends, and high-side/low-side drivers in small DC-DC converter stages. Designers also use this array for level shifters and discrete OR-ing diodes in redundant power paths. The compact SOT-363 footprint (frees 2.0 x 2.1 mm) supports dense board layouts where multiple switches must coexist with other analog ICs. When designing with this device, ensure that the gate drive rise time is fast enough to fully enhance the channel and minimize the linear-region transition loss. Place gate-source pull-down resistors (typically 100k) to prevent accidental turn-on during power-up transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an information gain layer for engineers evaluating DMN3190LDW-7 for next-generation portable designs.
DMP2066LSN-7 - 20V P-Channel MOSFET, 4.6A, 40mΩ | Diodes Inc
The Diodes Incorporated DMP2066LSN-7 is a P-channel enhancement-mode MOSFET rated at 20V VDS, 4.6A continuous drain current (TA = 25°C), and a maximum on-resistance of 40 mΩ at VGS = -4.5V. Packaged in a 3-pin SC-59-3 / SOT-23-3 surface-mount form factor, this part is designed as a small-signal load switch or low-side PWM driver in space-constrained designs. The device uses advanced trench technology to provide low on-resistance, low gate charge, and operation with gate drive as low as 1.8V, making it suitable for direct interfacing with low-voltage microcontrollers and 1.8V GPIO logic. A P-channel enhancement-mode MOSFET is a type of field-effect transistor that conducts when a negative gate-to-source voltage (relative to its source pin) is applied. P-channel MOSFETs are commonly used as high-side switches in battery-powered and low-voltage systems, where their ability to turn on with a logic-level low signal simplifies gate-drive circuitry. Within the broader taxonomy, a P-channel MOSFET belongs to the MOSFET family, which in turn sits under discrete semiconductors and power management devices, providing switching and amplification functions for current flow in electronic circuits. Key features include a maximum drain-to-source voltage of 20V, 4.6A continuous drain current at TA = 25°C, a typical on-resistance of 40 mΩ at VGS = -4.5V (datasheet also lists 70 mΩ at VGS = -2.5V), 1.25W power dissipation at TA = 25°C, and built-in ESD protection. The trench gate structure minimizes conduction losses and switching charge, while the SC-59-3 (SOT-23-3 equivalent) package provides a footprint compatible with industry-standard discrete layouts and reduces board area compared to larger DPAK or SO-8 alternatives. Typical applications for the DMP2066LSN-7 include load switching in portable electronics, battery protection circuits, USB power rails, LED driver switches, low-side PWM dimming, and power-rail ORing. The AEC-Q101 qualification indicates the device is suitable for high-reliability automotive designs, while RoHS compliance and lead-free construction meet modern environmental requirements for consumer and industrial products. When designing with this part, confirm that switching transients and load-dump events in 12V automotive systems stay within the 20V VDS rating, and ensure that gate-drive voltages remain within the rated VGS range (typically ±8V absolute maximum). For PWM applications, the low gate charge reduces driver losses at high switching frequencies.
DMT10H015LCG-7 - 100V N-Channel MOSFET, 34A, V-DFN3333-8 | Diodes Inc
The Diodes Incorporated DMT10H015LCG-7 is a 100V N-Channel Enhancement Mode MOSFET housed in a compact V-DFN3333-8 (3.3mm x 3.3mm) surface-mount package, designed to minimize on-state resistance while maintaining superior switching performance. The device is rated for 9.4A continuous drain current at ambient (Ta) and 34A at case temperature (Tc), with a maximum power dissipation of 1W (Ta) per the manufacturer datasheet. An N-Channel Enhancement Mode MOSFET (often abbreviated N-FET or NMOS) is a voltage-controlled switching transistor that conducts current between drain and source when a positive gate-to-source voltage exceeding the threshold is applied. Within the discrete components taxonomy, MOSFETs are a sub-category of transistors (MOS transistor -> transistor -> discrete semiconductor -> electronic component). N-Channel enhancement-mode parts are the dominant polarity in modern switching converters because they offer roughly 2-3x lower RDS(ON) per unit silicon area than equivalent P-Channel devices, which directly improves efficiency and thermal performance. Key features of the DMT10H015LCG-7 include an industry-standard 100V drain-to-source breakdown voltage (BVDSS) covering the 61V-100V MOSFET class, low on-state resistance for reduced conduction losses, fast switching characteristics suitable for high-frequency DC-DC converters, and a thermally enhanced DFN package with an exposed die-attach pad that lowers junction-to-ambient thermal resistance. The 3.3mm x 3.3mm outline with a central thermal pad enables high current handling in space-constrained PCB layouts. Technically, the device uses Diodes Incorporated's latest-generation trench MOSFET process to balance low RDS(ON) with low gate charge (Qg). This combination matters in switching applications because total switching loss scales with Qg x Vdrive x Fsw; a low Qg keeps the gate-drive burden on the controller manageable and allows higher switching frequencies without excessive driver losses. The V-DFN3333-8 footprint is JEDEC-compatible with standard DFN3333 land patterns used across the industry. Typical applications include notebook battery power management (load switch, battery protection, OVP/OCP disconnect), synchronous rectification in isolated and non-isolated DC-DC converters, hot-swap circuits on 48V telecom rails, motor drive H-bridges for low-voltage brushless DC fans and small pumps, and high-side load switching in industrial 24V systems. The 100V rating provides ample derating margin on 24V industrial and 48V telecom buses. When designing with this MOSFET, ensure the gate-drive voltage meets the Vgs(th) and plateau requirements of the controller; insufficient gate drive dramatically increases RDS(ON) and conduction loss. Place the gate-driver loop area and the power loop (input cap -> high-side FET -> low-side FET -> GND) as small as possible to minimize parasitic inductance that causes voltage overshoot and switching losses. This page synthesizes distributor pricing (as of 2026-10-05), drop-in alternatives from the manufacturer portfolio, and practical design notes that go beyond the bare spec table found in the manufacturer datasheet.
EPC2034C - 200V, 48A eGaN FET | EPC | Surface Mount Die
The Efficient Power Conversion EPC2034C is a 200 V, 48 A enhancement-mode Gallium Nitride (eGaN) power transistor supplied as a passivated die with surface-mount terminals, exhibiting 8 mOhm typical RDS(on). The part is rated for 213 A pulsed drain current per the EPC product page, with a 200 V drain-source breakdown and a small die footprint optimized for high-frequency switching converters where silicon MOSFETs reach their practical limit. An eGaN FET (enhancement-mode Gallium-Nitride-on-Silicon FET) is a wide-bandgap power transistor that replaces silicon MOSFETs and IGBTs in high-frequency, high-efficiency power conversion. GaN's higher electron mobility and lower gate/output charge translate into lower switching losses, smaller magnetics, and higher power density. Within the EPC product hierarchy, eGaN FETs sit alongside gate drivers and integrated half-bridges as the discrete switching element for DC-DC, AC-DC, and wireless-power topologies. Key specifications of the EPC2034C include 8 mOhm RDS(on) at the recommended gate drive, 200 V VDS rating, 48 A continuous drain current at Ta (per DigiKey listing), and gate charge characteristics that support multi-MHz switching. The die form factor eliminates the parasitic inductance and thermal resistance of a discrete package, allowing tighter loop layouts and lower junction-to-case thermal impedance. The architecture uses EPC's GaN-on-silicon process with a lateral structure that gives exceptionally low QGD/QGS ratios and near-zero reverse-recovery charge. Compared with a similarly-rated 200 V silicon MOSFET, the EPC2034C typically cuts switching loss by an order of magnitude in hard-switched topologies and enables topologies that are impractical in silicon, such as hard-switched 48 V point-of-load converters operating above 1 MHz. Typical applications include 48 V point-of-load converters for datacom/telecom, synchronous rectification in high-density DC-DC bricks, Class-D audio amplifiers, RF envelope tracking, and wireless-power transmit stages. The 200 V rating also suits LED laser driving and small motor drive stages where dead-time losses dominate. When designing with the EPC2034C, keep gate-drive loops minimal (the part's low internal inductance makes external layout critical), use a 5 V gate drive with a recommended negative turn-off option, and account for the surface-mount die handling requirements during PCB assembly. EPC evaluation kits provide reference layouts and recommended gate drivers. This page consolidates distributor pricing, parametric drop-in candidates, and practical PCB-layout notes that are not collected in the manufacturer datasheet alone.
EPC2045 - 100V, 7mΩ, 16A GaN FET | EPC | eGaN Power Transistor
The Efficient Power Conversion EPC2045 is a 100V enhancement-mode Gallium Nitride (eGaN) power transistor delivering 16A continuous drain current with an ultra-low 7 mΩ on-resistance, housed in a passivated die/wafer-level surface-mount package. It features a pulsed drain current rating of 130A, making it well suited for high-frequency, high-current pulsed-power circuits. According to the EPC2045 datasheet from Efficient Power Conversion, the device is RoHS 6/6 compliant and halogen-free, targeting applications that demand higher efficiency and power density than silicon MOSFETs. What is a GaN FET (Gallium Nitride Field-Effect Transistor)? A GaN FET is a wide-bandgap semiconductor power switch that offers lower switching losses, higher switching frequency capability, and lower on-resistance per area compared to traditional silicon MOSFETs. The EPC2045 belongs to EPC's eGaN FET family, which is the enhancement-mode GaN-on-Silicon technology that replaces silicon MOSFETs in point-of-load converters, LiDAR pulsers, and high-frequency DC-DC converters. Within the broader taxonomy, GaN FETs are a subclass of discrete power transistors -> discrete semiconductors -> semiconductors. Key features of the EPC2045 include 100V drain-source voltage rating, 7 mΩ typical RDS(on), 16A continuous drain current, 130A pulsed drain current, and exceptionally low gate charge (Qg) and reverse-recovery charge (Qrr) compared to silicon superjunction MOSFETs. The lack of a body diode reverse-recovery charge eliminates dead-time losses in hard-switched half-bridges, enabling higher frequency operation. The wafer-level chip-scale package (WLCSP / bare-die) minimizes parasitic inductance and allows direct attachment to the PCB. Typical applications for the EPC2045 include Open Rack Server Architectures (V1, V2, V3), LiDAR/Pulsed Power applications, USB-C Power Delivery cables and connectors, isolated power supplies (telecom bricks), and point-of-load converters. The combination of low RDS(on), high pulsed current, and very fast switching speeds makes it a strong replacement for 100V silicon MOSFETs in compact high-frequency designs where the silicon FET's Qrr dominates switching losses. When designing with the EPC2045, drive the gate with a GaN-optimized gate driver that provides 5V VGS and clean miller clamping to avoid false turn-on. Place bypass capacitors as close as possible to the source-sense pads to minimize high-frequency ringing in the 100+ MHz range.