10AX115U3F45E2LG vs 10AX115U3F45E2SG 비교
다음의 상세 나란히 비교: 10AX115U3F45E2LG 제조: Intel 및 10AX115U3F45E2SG 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 10AX115U3F45E2LG | 10AX115U3F45E2SG |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $8,500.00 | $5,800.00 |
| Series | Arria 10 GX | — |
| Family | Arria 10 | Arria 10 GX |
| Logic Elements | 1,150,000 | — |
| Embedded Memory Bits | 68,857,856 | 68,857,856 (≈ 52.99 Mbit) |
| User I/O Count | 480 | — |
| Speed Grade | U3 (medium-performance, transceiver-focused) | -2 (E2 commercial/extended) |
| Package Code | F45 (45 × 45 mm FCBGA) | — |
| Package Type | 1932-ball FCBGA (Flip-Chip BGA) | — |
| Process Technology | 20 nm TSMC | — |
| Transceiver Data Rate | Up to 28.05 Gbps | — |
| DSP Blocks | Variable-precision, 1.5 TFLOPs FP32 | Variable-precision, hardened floating-point |
| PCIe Hard IP | Gen3 x8/x16 | — |
| Memory Interfaces | DDR4, DDR3, QDR IV, RLDRAM 3 | — |
| 동작 온도 | 0C to +100C (Industrial, E2 grade) | Industrial (junction -40 °C to +100 °C) – device grade U |
| 실장 유형 | Surface Mount (BGA) | — |
| Configuration Method | SRAM-based, loaded via JTAG / AS / PS | FPGA configuration via serial/parallel flash, JTAG |
| RoHS 상태 | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Logic Elements (LE) | — | 1,150,000 |
| Adaptive Logic Modules (ALM) | — | 427,200 |
| Number of Transceivers | — | [DATA_NEEDED: per-die transceiver count, F45 package variant] |
| Maximum Transceiver Data Rate | — | 17.4 Gbps |
| Hard Memory Controllers | — | 2 (DDR4/DDR3/QDRII+/RLDRAM3) |
| Hard PCIe Gen3 IP Blocks | — | 2 × PCIe Gen3 (x8/x4/x2/x1) |
| 패키지 | — | 1932-ball FCBGA (F45, 45×45 mm, 1.0 mm pitch) |
| Process Node | — | 20 nm Tri-Gate (Intel) |
| Supply Voltage Core | — | [DATA_NEEDED: VCC/VCCP core voltage] |
| RoHS Compliance | — | Compliant |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |