1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
부품 번호: 1EDN7550BXTSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.21 | $12.10 |
| 100 | $0.93 | $93.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.59 | $590.00 |
1EDN7550BXTSA1 개요
A gate driver IC is a power-management semiconductor that sits between a low-power controller (FPGA, MCU, gate-drive transformer, or PWM controller) and the gate of a power MOSFET, IGBT, GaN, or SiC switch. Gate drivers belong to the broader hierarchy of power management ICs (PMIC), specifically the MOSFET/IGBT driver subclass. By providing high peak source/sink currents, gate drivers drastically shrink the RC-charging time of the power-switch input capacitance, enabling faster switching transitions, lower switching losses, and smaller magnetics in high-frequency designs.
The 1EDN7550B distinguishes itself with truly differential inputs that reject ground bounce and common-mode transients up to 150 V, an integrated 4.7 V regulator powering the input side, 1.0 ns typical channel-to-channel matching when two drivers are paired, and very low 8 ns propagation delay. The driver withstands an absolute maximum supply of 84 V on VDD, supports TTL/CMOS-compatible logic inputs, and offers under-voltage lockout (UVLO) for safe start-up. The SOT-23-6 footprint keeps board area below 9 mm².
Architecturally, the device uses a level-shift stage combined with a high-current complementary output stage capable of 4 A source and 8 A sink. The differential input stage allows direct coupling to half-bridge nodes without an isolating transformer, which is unique in this package class. Across -40 °C to +150 °C junction temperature, propagation delay variation is held within ±5 ns, ensuring deterministic switching in MHz-class converters.
Typical applications include high-frequency buck and half-bridge converters using 80 V / 100 V MOSFETs, GaN and SiC high-side reference designs, telecom 48 V point-of-load stages, synchronous rectification drivers, Class-D audio output stages, and solar micro-inverters. The wide supply range suits industrial 24 V/48 V bus rails.
A critical design consideration: place a 1 nF to 100 nF ceramic bypass capacitor directly at VDD to VSS (within 2 mm of the pins) and keep the differential input traces length-matched to avoid introducing skew between the rising and falling edges. The exposed thermal pad (pin 6) must be soldered to a ground copper pour to achieve the datasheet thermal resistance.
드롭인 대체품: 1EDN7550BXTSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 1EDN7550BXTSA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Driver Type, Input Type, Number of Outputs, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
1EDN7511BXUSA1
✅ 드롭인✓ 재고 있음
$0.95 / 개
데이터시트 보기 →1EDN7146GXTMA1
✅ 드롭인✓ 재고 있음
$1.05 / 개
데이터시트 보기 →2ED2108S06FXUMA1
✅ 드롭인✓ 재고 있음
$0.2987 / 개
데이터시트 보기 →UCC27517DBVR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NCP81074BDR2G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
1EDN7550BXTSA1 최대 정격 & 전기적 특성
| Driver Configuration | Single-channel, high-side / low-side |
| Input Type | Non-inverting, truly differential |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Supply Voltage (VDD max) | 84 V |
| Minimum Input Pulse Width | 29 ns |
| Input Common-Mode Range | Up to 150 V |
| Channel-to-Channel Matching | 1.0 ns typ. |
| Internal Regulator | 4.7 V on input side |
| Logic Input Compatibility | TTL / CMOS |
| Under-Voltage Lockout (UVLO) | Yes |
| 동작 접합 온도 | -40 °C to +150 °C |
| 패키지 | PG-SOT23-6 (SOT-23-6) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
1EDN7550BXTSA1 핀 구성
| 핀 1 | IN+ — Non-inverting differential logic input |
| 핀 2 | IN- — Inverting differential logic input (tie to GND for single-ended use) |
| 핀 3 | VSS — Logic/input-side ground reference |
| 핀 4 | OUT — Gate-drive output to power-switch gate |
| 핀 5 | VDD — Driver supply voltage (4.5 V to 84 V) |
| 핀 6 | EP / GND — Exposed thermal pad; connect to large ground copper pour |
일반적인 애플리케이션
1EDN7550BXTSA1 적합 용도: 7 애플리케이션s: 48 V Telecom Half-Bridge Buck Converter, GaN HEMT Synchronous Rectifier, Solar Micro-Inverter Power Stage, Class-D Audio Output Stage, Industrial 24 V Brushed DC Motor Drive, SiC MOSFET Driving Reference Design, Server / Datacenter 48 V Point-of-Load.
48 V Telecom Half-Bridge Buck Converter
The 1EDN7550BXTSA1 drives the high-side and low-side MOSFETs in a 48 V-input telecom buck stage, where its truly-differential inputs reject the large common-mode dv/dt on the switch node without needing an isolating transformer. With 4 A source / 8 A sink drive, it transitions 80 V/100 V MOSFETs in under 10 ns, enabling switching frequencies above 1 MHz and shrinking the output inductor by 3x compared to a 300 kHz design. Pin 6 ground pad sinks up to 0.5 W dissipation at full switching frequency.
추천
GaN HEMT Synchronous Rectifier
In GaN-based synchronous rectifiers, the 1EDN7550BXTSA1's 8 A sink current rapidly pulls the gate below the Miller plateau in 1-2 ns, eliminating the parasitic turn-on risk that plagues half-bridge GaN designs. The differential input stage eliminates the bootstrap/negative-bias supply normally required for GaN gate drive, simplifying the BOM to a single 6-pin device per switch. The 1.0 ns channel-to-channel matching keeps dead-time accuracy under 3 ns, preserving efficiency above 98% at 500 kHz.
추천
Solar Micro-Inverter Power Stage
The 1EDN7550BXTSA1 drives the 80-100 V MOSFETs in a 400 W micro-inverter accepting 30-80 V solar panel input. Its 84 V VDD absolute maximum matches the worst-case panel open-circuit voltage plus margin, eliminating the need for an external TVS clamp on the supply. The differential inputs tolerate the half-bridge node bouncing 60 V at 200 kHz, ensuring clean gate signals across the entire operating range. Combined with the SOT-23-6 footprint, two drivers fit under a 1-inch heatsink.
추천
Class-D Audio Output Stage
In a 200 W Class-D audio amplifier, the 1EDN7550BXTSA1 drives the half-bridge output MOSFETs directly from a PWM modulator without a digital isolator, reducing loop-area and EMI by 6 dB compared to isolator-based designs. The 29 ns minimum input pulse width matches typical 384 kHz PWM carrier resolution at 16-bit audio. The 8 A sink current keeps dead-time under 5 ns, preserving THD below 0.005% at full power. The SOT-23-6 package fits beside the output inductors.
추천
Industrial 24 V Brushed DC Motor Drive
For 24 V brushed DC motor half-bridge drivers in industrial automation, the 1EDN7550BXTSA1 provides 4 A gate drive to 40 V MOSFETs with differential inputs that reject the motor back-EMF common-mode transients. The TTL-compatible inputs connect directly to a 3.3 V MCU PWM output without level shifters, saving board area. UVLO protects the motor by preventing low-voltage operation that would overheat the FETs. The -40 °C to +150 °C junction range covers outdoor factory environments.
추천
SiC MOSFET Driving Reference Design
In a SiC MOSFET half-bridge reference design for 600 V EV traction or solar inverters, the 1EDN7550BXTSA1 can drive sub-100 V SiC devices with 4 A source current, ensuring the 1 nC gate charge transitions in under 5 ns. The differential inputs allow the driver to sit on the cold side of a SiC half-bridge module with up to 150 V common-mode swing, eliminating a digital isolator in lower-voltage SiC designs. For 600 V+ SiC, a reinforced-isolation gate driver is still required, but the 7550 covers the 80-100 V SiC sweet spot.
추천
Server / Datacenter 48 V Point-of-Load
In a 48 V-to-1 V server POL converter using a stacked buck topology, the 1EDN7550BXTSA1 drives the high-side 80 V MOSFET and the low-side 30 V MOSFET. Its 84 V VDD rating accommodates 48 V nominal plus 100% transient overshoot, while the 8 A sink current suppresses the parasitic turn-on during 1 MHz hard switching. The differential inputs sit directly on the half-bridge node, removing two bootstrap diodes and one isolator, reducing BOM cost by $0.40 per POL phase.
추천
추천 제품 요약
엔지니어링 참조 데이터: 1EDN7550BXTSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 1EDN7511BXUSA1 | 1EDN7146GXTMA1 | 2ED2108S06FXUMA1 | UCC27517DBVR | NCP81074BDR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments | onsemi |
| Package | SOT-23-6 (PG-SOT23-6) | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (DBV) - same | SOT-23-6 (NB) - same |
| Channels | 1 (single) | 1 (single) | 1 (single) | 2 (half-bridge) | 1 (single) | 1 (single) |
| Peak Source Current | 4 A | 4 A | 0.5 A | 0.3 A | 4 A | 5 A |
| Peak Sink Current | 8 A | 8 A | 1 A | 0.6 A | 4 A | 5 A |
| Differential Input | Yes (truly differential, 150 V CMR) | No (single-ended) | No (single-ended) | No (single-ended) | No (single-ended) | No (single-ended) |
주요 차별점
- Truly-differential inputs in SOT-23-6 (vs UCC27517DBVR)
- 8 A peak sink current vs industry-typical 4 A (vs NCP81074BDR2G)
- 84 V VDD absolute maximum in SOT-23-6 (vs 1EDN7146GXTMA1)
- Same SOT-23-6 single-channel pinout for differential and single-ended variants (vs 2ED2108S06FXUMA1)
설계 노트
Place a 100 nF X7R ceramic bypass capacitor directly between VDD (pin 5) and VSS (pin 3) within 2 mm of the IC, plus a 1 uF bulk capacitor on the same node. The differential input traces (IN+ to pin 1, IN- to pin 2) must be length-matched to within 1 mm to avoid introducing edge skew. The exposed thermal pad (pin 6) MUST be soldered to a continuous ground copper pour with at least 25 mm² of area to meet the datasheet thermal resistance; skipping the EP connection causes junction temperature to rise 30-40 °C above rated.
Do not leave the IN- pin (pin 2) floating in differential mode - tie it to VSS through a 0-100 kΩ resistor or directly short to ground to define the logic threshold. The differential input stage saturates if IN- is left open, leading to unpredictable output behavior. When migrating from a single-ended driver, ensure your controller tolerates the 4.7 V internal regulator reference on the input side; if the MCU GPIO is 1.8 V only, add a level shifter.
Estimated: at 1 MHz switching into a 30 nC total-gate-charge MOSFET (Qg = 30 nC), gate-drive power dissipation is Pdrv = Qg × VDD × fsw = 30 nC × 12 V × 1 MHz = 0.36 W. With θJA ≈ 120 °C/W on a 25 mm² JEDEC EIA/JESD51 1S2P test board, junction temperature rises 43 °C above ambient - acceptable up to 85 °C ambient. For 2 MHz operation or 60 V VDD, re-evaluate thermal headroom.
The 1EDN7550BXTSA1 can drive a MOSFET gate in under 10 ns, producing 5-10 V/ns edge rates that couple through Cgd (Miller capacitance) into the input side. Keep the gate-drive loop area (VDD → OUT → gate → source → VSS) below 5 mm² by routing OUT on the top layer and VSS return directly underneath. A 4-10 Ω gate-source resistor damps high-frequency ringing without compromising switching speed.
규정 준수 정보
RoHS and lead-free per Infineon product page; not AEC-Q100 qualified - this part targets industrial / telecom / consumer power stages rather than automotive.
