BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon
부품 번호: BSZ065N06LS5ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.94 | $94.00 |
| 500 | $0.76 | $380.00 |
| 1,000 | $0.62 | $620.00 |
BSZ065N06LS5ATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals in response to a gate drive voltage. MOSFETs form the core switching elements in synchronous buck converters, motor drives, load switches, hot-swap controllers, and battery protection circuits, occupying the lowest tier of the power-electronics hierarchy: switch -> converter -> power supply -> system. The BSZ065N06LS5 belongs to the OptiMOS 5 logic-level family, which is optimized for low gate charge and fast switching at standard 4.5 V to 10 V gate drive levels commonly produced by microcontrollers and standard gate drivers.
Key features of the BSZ065N06LS5ATMA1 include 6.5 mΩ maximum RDS(on) at VGS=10 V, a low gate threshold suitable for logic-level drive, 46 W maximum power dissipation, and an operating junction temperature range of -55°C to +150°C. The OptiMOS 5 process delivers excellent figure-of-merit (FOM = RDS(on) × Qg), reducing both conduction and switching losses simultaneously. Per the Infineon datasheet, the device is logic-level compatible and engineered for high-frequency DC-DC conversion.
Typical applications for this part include wireless charging power stages, adapter and telecom point-of-load converters, synchronous rectification, motor control, hot-swap and load-management circuits, and battery management systems in 12 V/24 V rails. According to the manufacturer, OptiMOS 5 logic-level parts are highly suitable for wireless charging, adapter and telecom applications where efficiency and small size are both required.
When designing with the BSZ065N06LS5, ensure that gate-drive voltage reaches the full logic-level plateau (10 V recommended for lowest RDS(on)) and that PCB copper area under the exposed pad is maximized for thermal dissipation. The S3O8/TSDSON-8-FL package relies on its thermal pad for heat removal, so a thermal via array is recommended.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including parametric proximity comparison and same-footprint cross-brand guidance.
드롭인 대체품: BSZ065N06LS5ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSZ065N06LS5ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSC066N06NSATMA1
✅ 드롭인✓ 재고 있음
$0.49 / 개
데이터시트 보기 →BSZ070N08LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →BSC0902NSATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →BSC052N08NS5ATMA1
✅ 드롭인✓ 재고 있음
$0.52 / 개
데이터시트 보기 →BSZ096N10LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.94 / 개
데이터시트 보기 →BSZ011NE2LS5IATMA1
✅ 드롭인✓ 재고 있음
$0.55 / 개
데이터시트 보기 →BSZ065N06LS5ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Technology | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) Max | 60 V |
| Continuous Drain Current (ID) Max | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ |
| Power Dissipation (PD) Max | 46 W |
| Gate Threshold Voltage (VGS(th)) | 2.3 V |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | 1.8 nF |
| 동작 온도 범위 | -55°C to +150°C |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
BSZ065N06LS5ATMA1 핀 구성
| 핀 1 | S — Source |
| 핀 2 | S — Source |
| 핀 3 | S — Source |
| 핀 4 | S — Source (thermal pad connection) |
| 핀 5 | D — Drain (thermal pad) |
| 핀 6 | D — Drain (thermal pad) |
| 핀 7 | D — Drain (thermal pad) |
| 핀 8 | G — Gate |
안전 동작 영역 (DC, TJ=25°C)
일반적인 애플리케이션
BSZ065N06LS5ATMA1 적합 용도: 7 애플리케이션s: Synchronous Rectification in 24V Buck Converters, Wireless Charging Power Stage, 12V/24V Battery Management & Hot-Swap, Telecom Point-of-Load Converters, Brushless DC Motor Drive (Low-Side FET), Adapter and Power Bank Output Switch, DC Load Switch in Industrial Automation.
Synchronous Rectification in 24V Buck Converters
The BSZ065N06LS5ATMA1 fits synchronous rectification in 24V buck converters because its 60 V VDS rating provides a 36 V safety margin above 24 V input, comfortably handling transients on industrial buses. With 6.5 mΩ RDS(on) at VGS=10 V and only 13 nC total gate charge, conduction and switching losses are minimized, boosting efficiency above 95% in adapter and telecom POL designs. The PQFN 3.3x3.3 footprint enables high-density layouts where space is at a premium.
추천
Wireless Charging Power Stage
For wireless-charging transmitter and receiver power stages, the BSZ065N06LS5ATMA1's logic-level gate threshold (2.3 V) allows direct MCU or wireless-charging-IC drive without charge pumps, simplifying the resonant tank. Its low FOM (RDS(on) × Qg) keeps switching losses low at the 100-200 kHz operating frequencies typical of Qi chargers. The small PQFN package concentrates heat under the coil area where board area is constrained.
추천
12V/24V Battery Management & Hot-Swap
In 12V/24V battery management and hot-swap controllers, the BSZ065N06LS5ATMA1 acts as the load disconnect switch. Its 65 A continuous drain current supports high inrush loads, while the 60 V VDS provides headroom for inductive transients and load-dump events. The 6.5 mΩ RDS(on) keeps steady-state conduction losses low, preserving battery runtime in portable and e-mobility applications.
추천
Telecom Point-of-Load Converters
The BSZ065N06LS5ATMA1 is engineered by Infineon specifically for telecom POL converters operating from 24 V or 48 V backplanes, where its 60 V VDS rating covers the worst-case rectified telecom bus. Low gate charge (13 nC) supports multi-MHz switching in the synchronous FET position, shrinking inductor and capacitor size on the POL module PCB. The OptiMOS 5 process delivers best-in-class figure-of-merit for adapter and telecom power density.
추천
Brushless DC Motor Drive (Low-Side FET)
In BLDC motor drives for fans, pumps, and small appliances, the BSZ065N06LS5ATMA1 serves as the low-side switching FET in a three-phase inverter. Its 6.5 mΩ RDS(on) and 46 W power dissipation support continuous motor currents up to several amps with adequate PCB copper. The logic-level gate threshold allows direct PWM drive from a 3.3 V or 5 V MCU through a small gate-driver stage.
추천
Adapter and Power Bank Output Switch
For USB-PD adapters and power-bank output switches, the BSZ065N06LS5ATMA1 provides a low-loss eFuse or load-disconnect element. Its 65 A current rating covers 100 W USB-PD outputs with margin, while the 60 V VDS handles the full adapter output range. The PQFN 3.3x3.3 package fits inside the tightest adapter housings alongside magnetics and USB-C connectors.
추천
DC Load Switch in Industrial Automation
In industrial automation PLCs and distributed I/O, the BSZ065N06LS5ATMA1 functions as a low-side DC load switch energizing relays, solenoids, and small actuators. Its logic-level gate drive interfaces directly with industrial 24 V logic outputs, while 60 V VDS suppresses inductive kickback from relay coils without external TVS protection. The -55 to +150 °C junction range covers harsh factory-floor environments.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSZ065N06LS5ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSC066N06NSATMA1 | BSZ070N08LS5ATMA1 | BSC0902NSATMA1 | BSC052N08NS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 100 V | 80 V | 100 V |
| Continuous Drain Current (ID) | 65 A | 60 A | 70 A | 62 A | 55 A | 57 A |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | 6.6 mΩ | 7.0 mΩ | 9.0 mΩ | 5.2 mΩ | 9.6 mΩ |
| Total Gate Charge (Qg) | 13 nC | 15 nC | 14 nC | 18 nC | 11 nC | 20 nC |
| Power Dissipation (PD) | 46 W | 44 W | 46 W | 42 W | 46 W | 40 W |
| Technology / Family | OptiMOS 5 logic-level | OptiMOS 5 standard | OptiMOS 5 logic-level | OptiMOS 5 standard | OptiMOS 5 standard | OptiMOS 5 logic-level |
| Unit Price @ 1000 pcs (USD) | $0.62 | $0.68 | $0.78 | $0.55 | $0.72 | $0.71 |
주요 차별점
- Logic-level gate threshold for direct MCU drive (vs BSC066N06NSATMA1)
- Lower RDS(on) than higher-voltage OptiMOS 5 siblings (vs BSZ070N08LS5ATMA1 (80 V version))
- Higher current rating than 100 V OptiMOS 5 parts (vs BSC0902NSATMA1 (100 V, 9 mΩ))
설계 노트
Estimated: at ID=20 A and RDS(on)=6.5 mΩ, the BSZ065N06LS5ATMA1 dissipates approximately P = I² × RDS(on) = 20² × 0.0065 = 2.6 W. On a 1 oz copper 1 sq. inch pad with thermal via array, θJA is approximately 50 °C/W, giving a junction rise of 130 °C above ambient. For continuous operation above 15 A, either forced-air cooling or a larger PCB copper area is required. The exposed thermal pad must be soldered to maximize heat transfer.
Place the BSZ065N06LS5ATMA1 with its thermal pad directly over a thermal via array connecting to an inner or bottom copper plane. Use at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) under the pad to drop thermal resistance to the bottom-side heatsink copper. Keep gate-loop traces short and direct; place the gate-drive resistor within 5 mm of pin 8 to minimize ringing in high-current switching transitions.
Do not operate the BSZ065N06LS5ATMA1 above 60 V VDS even transiently, as avalanche breakdown can permanently degrade the device. For 48 V telecom applications where the bus may transiently exceed 60 V, choose the BSZ070N08LS5ATMA1 (80 V VDS) instead. Also, ensure the gate drive reaches the full 10 V plateau; partial enhancement at 4.5 V raises RDS(on) and can cause thermal runaway in high-current switching stages.
The PQFN 3.3x3.3 package has low parasitic source inductance but the gate loop must still be minimized to control switching-node ringing. Add a small ferrite bead or 1-10 Ω gate resistor in series with the gate drive to dampen high-frequency ringing. Place a snubber (RC or RCD) across the FET if the synchronous-rectifier body-diode reverse recovery causes excessive dV/dt.
규정 준수 정보
RoHS and REACH compliance confirmed via Infineon product page and JLCPCB part listing. Standard part is not AEC-Q100 qualified; for automotive-grade equivalents in the same OptiMOS 5 family, consider BSZ011NE2LS5IATMA1 (25 V logic-level automotive).
