EP3SE110F780C4LN vs EP3SE50F780C4N 비교

다음의 상세 나란히 비교: EP3SE110F780C4LN 제조: Intel 및 EP3SE50F780C4N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 EP3SE110F780C4LN EP3SE50F780C4N
브랜드 Intel Intel
카테고리 FPGA & CPLD FPGA & CPLD
수명 주기 상태 활성 NRND
재고 상태 In Stock In Stock
단가 (USD) $3,450.00 $1,430.00
Family Stratix III E Stratix III E
Logic Elements (LE) 107,500 47,500
Logic Array Blocks (LABs) 4,300 —
Embedded Memory 8,936,448 bits —
User I/O Pins 488 —
패키지 780-BBGA, FCBGA (Fine-pitch) 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch
Supply Voltage Core 0.9 V (typical) —
동작 온도 0C to +85C (Commercial) 0C to +85C (C4 commercial grade)
Speed Grade C4 —
Lead-Free / RoHS Yes (N suffix) —
실장 유형 Surface Mount (SMT) Surface Mount (BGA)
Process Technology 40 nm TSMC —
DSP Blocks Yes (18x18 multipliers) —
MSL 레벨 3 (per JEDEC J-STD-020) 3 (per JEDEC J-STD-020, FBGA package)
Tray Packaging Yes (per distributor listings) —
Embedded Memory Bits — 5,760,000
Embedded Memory (M9K/M144K blocks) — 488 (per family datasheet)
Number of LABs — 1900
Maximum User I/Os — 488
DSP Blocks (18x18 multipliers) — 432
PLLs — 12 (per family datasheet)
Maximum Operating Frequency — 717 MHz
Transceiver Channels — Up to 12 (per family, model-dependent)
Transceiver Data Rate — Up to 6.375 Gbps (per Stratix III E family)
Process Node — 40 nm
공급 전압 — Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail)
Configuration Modes — JTAG, Passive Serial, Fast Passive Parallel
RoHS 상태 — Lead-free / RoHS compliant
Hard Memory Controller — DDR2/DDR3 SDRAM (per Stratix III E family)

데이터시트 & 자료

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