EP3SE260H780C4L vs EP3SE260H780C3N 비교
다음의 상세 나란히 비교: EP3SE260H780C4L 제조: Intel 및 EP3SE260H780C3N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP3SE260H780C4L | EP3SE260H780C3N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | NRND | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1,190.00 | $1,325.00 |
| Family | Stratix III E | — |
| Logic Elements | 255,000 | — |
| LABs/CLBs | 10,200 | — |
| Total RAM Bits | 16,672,768 (16.7 Mbit) | — |
| User I/O Count | 488 | — |
| 패키지 | 780-ball FCBGA (HBGA 33x33 mm) | 780-BBGA, FCBGA (H780) |
| Speed Grade | C4 (middle/slow tier) | — |
| Core Voltage | 0.9 V (nominal) | — |
| 동작 접합 온도 | 0C to +85C (commercial) | — |
| 실장 유형 | Surface Mount (flip-chip BGA) | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL level] | — |
| RoHS 상태 | Compliant (lead-free per datasheet) | Compliant (lead-free 'N' suffix) |
| Transceivers | Up to 24 multi-gigabit transceivers | [DATA_NEEDED: number of embedded transceivers and max data rate] |
| Memory Interface | DDR3, DDR2, QDRII+, RLDRAM II controllers | — |
| Configuration Mode | PS, FPP, JTAG with EPCS/EPCQ | — |
| Series | — | Stratix® III E |
| Logic Elements (LE) | — | 255,000 |
| Embedded Memory (bits) | — | 16,672,768 |
| Number of LABs/CLBs | — | 10,200 |
| User I/Os | — | 488 |
| Number of Pins / Balls | — | 780 |
| 동작 온도 | — | 0 °C to +85 °C (C grade, commercial) |
| Process Technology | — | 40 nm CMOS |
| Maximum Core Frequency | — | [DATA_NEEDED: maximum core frequency MHz] |
| Supply Voltage (VCCINT) | — | [DATA_NEEDED: VCCINT nominal V] |
| DSP Blocks | — | [DATA_NEEDED: number of DSP blocks and precision] |
| 습도 민감도 레벨 (MSL) | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |
| Configuration Method | — | SRAM-based, configured via JTAG / passive / active serial / fast passive parallel |
| Design Toolchain | — | Altera Quartus II (legacy); Intel Quartus Prime |