IPB35N10S3L26ATMA1 vs IPD5N25S3430ATMA1 비교
다음의 상세 나란히 비교: IPB35N10S3L26ATMA1 제조: Infineon 및 IPD5N25S3430ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB35N10S3L26ATMA1 | IPD5N25S3430ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.15 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T | — |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Technology | — | OptiMOS (planar-trench) |
| Drain-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 5 A |
| Pulsed Drain Current (IDM) | — | 20 A |
| RDS(on) max @ VGS=10V | — | 430 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | — | 422 pF typical |
| Power Dissipation (PD, Tc=25°C) | — | 41 W |
| 동작 접합 온도 | — | -55 °C to +175 °C |
| 패키지 | — | PG-TO252-3-313 (DPAK, surface mount) |
| Automotive Qualification | — | AEC-Q101 |
| Lead Finish | — | Matte Tin (lead-free) |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single, 3-pin (2+Tab) |