IPB35N10S3L26ATMA1 vs IPD5N25S3430ATMA1 Comparison

Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPD5N25S3430ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB35N10S3L26ATMA1 IPD5N25S3430ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS-T —
Channel Type N-Channel —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Power Dissipation (PD) at TC 71 W —
Package Type PG-TO263-3 (D2PAK-2) —
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) —
Channel Mode Enhancement —
RDS(on) (typical per Infineon product page) 26.3 mΩ —
Typical Gate Charge Qg @ Vgs 80 nC —
Maximum Drain-Source Resistance Rds 1.7 mΩ (per RS Components listing) —
Minimum Operating Temperature -55 C —
Maximum Power Dissipation Pd 81 W (per RS Components listing) —
RoHS Status [DATA_NEEDED: RoHS status] ROHS3 Compliant
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] —
Transistor Type — N-Channel MOSFET
Technology — OptiMOS (planar-trench)
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID, Tc=25°C) — 5 A
Pulsed Drain Current (IDM) — 20 A
RDS(on) max @ VGS=10V — 430 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3 V typ / 4 V max
Input Capacitance (Ciss) — 422 pF typical
Power Dissipation (PD, Tc=25°C) — 41 W
Operating Junction Temperature — -55 °C to +175 °C
Package — PG-TO252-3-313 (DPAK, surface mount)
Automotive Qualification — AEC-Q101
Lead Finish — Matte Tin (lead-free)
MSL Level — 1 (per JEDEC J-STD-020)
Configuration — Single, 3-pin (2+Tab)

Datasheets & Resources

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