IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
부품 번호: IPP100N12S305AKSA2 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.7 | $6.70 |
| 10 | $5.92 | $59.20 |
| 100 | $4.97 | $497.00 |
| 500 | $4.35 | $2,175.00 |
| 1,000 | $3.78 | $3,780.00 |
IPP100N12S305AKSA2 개요
An N-channel power MOSFET is a voltage-controlled majority-carrier device used as a high-speed switch or low-loss linear element in power conversion circuits. Power MOSFETs sit within the broader semiconductor hierarchy: MOSFET -> discrete semiconductor -> power semiconductor. They are favored over BJTs in switching applications because they require negligible steady-state gate drive current and switch in nanoseconds, dramatically reducing switching losses compared to bipolar devices. The IPP100N12S305AKSA2's 120 V rating places it firmly in the mid-voltage class suitable for 24 V, 36 V, and 48 V bus systems, telecom bricks, and synchronous-rectification secondary sides.
Key specifications include a very low on-state resistance (typical R_DS(on) in the single-digit milliohm range at VGS=10 V, exact value per datasheet), gate threshold voltage in the 2-4 V class typical of standard-level OptiMOS parts, and avalanche-rated single-pulse energy capability. The PG-TO220-3-1 package provides a screw-mountable tab for direct heatsink attachment and a thermal resistance suitable for continuous 100 A operation with proper cooling. The package's through-hole leads suit hand-soldered prototypes and high-current screw-terminal assemblies.
The OptiMOS 5 process trench cell geometry reduces both R_DS(on) x Qg figure of merit and reverse-recovery charge (Qrr) of the intrinsic body diode, making this part well suited to hard-switched and soft-switched bridge topologies. Compared to older planar MOSFET generations at the same voltage class, it typically cuts conduction losses by 30-50% and switching losses by a similar margin, enabling either higher efficiency or smaller heatsinks in the same mechanical envelope.
Typical applications include synchronous rectification in 48 V telecom DC-DC bricks, motor-drive half-bridges in industrial automation (24-72 V bus), high-current hot-swap and OR-ing controllers in server and telecom power shelves, solar inverter boost and buck stages, and uninterruptible power supply (UPS) PFC switches. In each of these roles the part's low R_DS(on) directly translates to higher system efficiency and reduced heatsink cost.
When designing with this part, pay attention to gate-drive voltage (10 V VGS recommended for full R_DS(on) specification), PCB layout for the source-kelvin connection if used, and heatsink selection. The TO220 tab is at the Drain potential, so an electrically-insulating thermal interface material or a grounded heatsink must be chosen to match the application's safety and creepage requirements.
This page synthesizes distributor pricing, drop-in alternatives, design notes, and application guidance not consolidated on the manufacturer product page.
드롭인 대체품: IPP100N12S305AKSA2 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPP100N12S305AKSA2 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Drain-Source Voltage (VDS), MSL Level, Number of Pins.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPP147N12N3GXKSA1
✅ 드롭인✓ 재고 있음
$1.62 / 개
데이터시트 보기 →IHW40N120R5XKSA1
✅ 드롭인✓ 재고 있음
$3.5 / 개
데이터시트 보기 →IPP100N12S305AKSA1
✅ 드롭인✓ 재고 있음
$2.05 / 개
데이터시트 보기 →IPP320N20N3GXKSA1
✅ 드롭인✓ 재고 있음
$1.36 / 개
데이터시트 보기 →IPP60R180P7XKSA1
✅ 드롭인✓ 재고 있음
$1.3 / 개
데이터시트 보기 →BSC014NE2LSIATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.48 / 개
데이터시트 보기 →IPP100N12S305AKSA2 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID, TC=25C) | 100 A |
| Maximum Power Dissipation (PD, TC=25C) | 300 W |
| 동작 온도 범위 | -55C to +175C (TJ) |
| 패키지 | PG-TO220-3-1 (Through Hole) |
| 실장 유형 | Through Hole |
| 핀 수 | 3 (Gate, Drain, Source) |
| RoHS 상태 | Compliant |
| MSL 레벨 | N/A (Through Hole) |
| Avalanche Energy Rated | Yes (single-pulse) |
IPP100N12S305AKSA2 핀 구성
| 핀 1 | Gate — Gate drive input - apply 10 V VGS for full R_DS(on) specification |
| 핀 2 | Drain — Drain connection - also tied to the metal mounting tab |
| 핀 3 | Source — Source return for the main current path |
안전 동작 영역 (DC, TC=25C)
일반적인 애플리케이션
IPP100N12S305AKSA2 적합 용도: 6 애플리케이션s: 48V Telecom DC-DC Synchronous Rectification, Industrial Motor Drive Half-Bridge, Server / Telecom Hot-Swap and OR-ing, Solar Inverter Boost and Buck Stages, UPS PFC and Inverter Stages, Automotive 48V Mild-Hybrid DC-DC Converters.
48V Telecom DC-DC Synchronous Rectification
The IPP100N12S305AKSA2 fits 48 V telecom brick synchronous rectifier slots where its 120 V VDS rating provides 150% headroom over nominal 48 V and the OptiMOS 5 low R_DS(on) drops conduction loss versus Schottky rectifiers. With 100 A continuous current capability and a TO-220 tab for direct heatsink attachment, it handles typical 600-1200 W brick converter output stages. The low Qrr of the intrinsic body diode reduces dead-time losses in hard-switched buck stages driven by gate-driver ICs such as the Infineon 2ED21844S06J or 1EDN71xx family, directly improving overall brick efficiency by 1-2% at full load.
추천
Industrial Motor Drive Half-Bridge
In 24-72 V industrial motor drive half-bridges (BLDC, stepper, brushed DC), the IPP100N12S305AKSA2's 120 V VDS rating covers 48 V and 60 V bus systems with substantial transient margin. The 100 A continuous current suits drives up to ~3 kW continuous power, and the TO-220-3-1 package can be screwed to a shared aluminum heatsink or cold-plate. Pair the MOSFET with the IRS21834STRPBF or IR2104STRPBF half-bridge gate driver for reliable level-shifted high-side drive. Designers should add external flyback or TVS protection across the motor windings because motor inductance can generate repetitive voltage spikes that approach the VDS limit during PWM switching.
추천
Server / Telecom Hot-Swap and OR-ing
The IPP100N12S305AKSA2 serves as the main pass-FET in 48 V hot-swap controllers and OR-ing circuits in server and telecom power shelves, where its 100 A continuous rating covers typical 50-80 A load steps and its low R_DS(on) minimizes steady-state voltage drop across the FET. The 120 V VDS rating tolerates inductive kickback from paralleled power-supply transients. Use it with hot-swap controller ICs such as the LTC4281 or TPS2480/81 to implement programmable inrush current limiting, fault protection, and OR-ing redundancy. The TO-220 tab provides both thermal dissipation and the screw-mount mechanical robustness required in 1U server chassis.
추천
Solar Inverter Boost and Buck Stages
In solar micro-inverters and string-inverter boost PFC stages operating from 30-96 V battery or panel rails, the IPP100N12S305AKSA2 fits as the main switching FET in interleaved boost converters up to ~3 kW. Its 120 V VDS handles the boost output voltage with 25% margin, and the low R_DS(on) keeps conduction losses low at the 10-30 A per-FET currents typical of interleaved topologies. The OptiMOS 5 process minimizes switching losses, allowing higher switching frequencies (50-100 kHz) and smaller magnetics. Drive the gate with a UCC27714 or 2ED21844S06J isolated gate driver for reliable high-side switching in the boost high-side position.
추천
UPS PFC and Inverter Stages
Uninterruptible power supplies (UPS) in the 1-5 kVA class use 48-96 V DC bus topologies where the IPP100N12S305AKSA2 fits as the main switching element in PFC and inverter stages. Its 100 A continuous current suits 3 kVA-class systems, and the low R_DS(on) directly reduces thermal dissipation in the high-current inverter bridge. The TO-220-3-1 through-hole package simplifies manufacturing for the moderate-volume UPS market and supports hand-repairable field service. Pair it with the IRS2110STRPBF or similar high-side gate driver for the half-bridge inverter leg, and add TVS protection across the bus for transient suppression during grid events.
추천
Automotive 48V Mild-Hybrid DC-DC Converters
In 48 V mild-hybrid automotive systems (MHEV), the IPP100N12S305AKSA2 fits the bidirectional 48 V / 12 V DC-DC converter power stage where the 120 V VDS rating handles 48 V bus transients up to ~80 V. Its 100 A continuous capability covers 1-2 kW converter power levels typical of MHEV architectures, and the TO-220 package suits chassis-mounted power electronics. For full AEC-Q101 automotive qualification, consider the automotive-grade variant if available in the same part family, otherwise use this industrial-grade part for non-safety-critical 48 V accessory converters. Use a snubber and TVS clamp to suppress automotive load-dump transients that can exceed 100 V on the 48 V bus.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPP100N12S305AKSA2 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPP147N12N3GXKSA1 | IHW40N120R5XKSA1 | IPP100N12S305AKSA1 | IPP320N20N3GXKSA1 | IPP60R180P7XKSA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO220-3-1 | PG-TO220-3-1 - same | PG-TO220-3-1 - same | PG-TO220-3-1 - same | PG-TO220-3-1 - same | PG-TO220 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 120 V | 200 V | 1200 V | 120 V | 200 V | 600 V |
| Continuous Drain Current (TC=25C) | 100 A | 100 A | 40 A | 100 A | 100 A | 20 A |
| Technology Family | OptiMOS 5 | OptiMOS 3 | Reverse-conducting IGBT | OptiMOS 5 | OptiMOS 3 | CoolMOS P7 |
| Maximum Power Dissipation (TC=25C) | 300 W | 300 W | 250 W | 300 W | 300 W | 180 W |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
주요 차별점
- 120 V VDS rating at 100 A continuous in TO-220 - balanced mid-voltage class (vs IHW40N120R5XKSA1)
- OptiMOS 5 technology - lowest R_DS(on) x Qg figure of merit at 120 V (vs IPP147N12N3GXKSA1)
- 100 A continuous drain current in TO-220 - high-current through-hole option (vs IPP60R180P7XKSA1)
설계 노트
At continuous 100 A operation, power dissipation in the IPP100N12S305AKSA2 can reach several hundred watts depending on R_DS(on). Use the tab-mount screw with thermal compound (e.g., Shin-Etsu X-23-7783D or Wakefield-Vette 120-2) and a heatsink with thermal resistance below 0.5 C/W to keep junction temperature below 125 C at full load. Forced-air cooling is required above ~50 A continuous in typical ambient conditions. Estimated: assuming R_DS(on) = 4 mohm and 100 A load, conduction loss is approximately 40 W and junction-to-ambient rise with a 0.5 C/W heatsink is 20 C above the case-sink delta.
Keep the gate-drive loop area as small as possible - the source-return path from the driver IC to the MOSFET source pin must be physically short and wide to minimize parasitic inductance. Use a kelvin-source connection (separate source-sense trace) if driving high di/dt loads. Place the gate-driver IC within 10 mm of the MOSFET gate pin to avoid gate-loop ringing. The drain tab is at drain potential, so use an insulating thermal pad (Bergquist Sil-Pad or 3M 8810) if the heatsink is grounded to the chassis.
Do not exceed 120 V VDS - repetitive avalanche from unclamped inductive loads can destroy the MOSFET even within the single-pulse avalanche rating. Always add a TVS diode, RC snubber, or active clamp across inductive loads. Use a 10 V VGS gate-drive supply: lower VGS increases R_DS(on) dramatically, while VGS above 12 V risks gate-oxide rupture. Confirm gate-driver UVLO threshold is below 10 V at cold temperatures. The body diode is not optimized for continuous conduction - if used as a freewheeling diode at high di/dt, add an external Schottky or RC snubber.
규정 준수 정보
RoHS and REACH compliant per Newark product listing. Industrial grade - not AEC-Q100 qualified. For automotive safety-critical applications, use an AEC-Q101 qualified variant if available in the same part family.
