IQE220N15NM5CGSCATMA1 vs IQE050N08NM5CGSCATMA1 비교
다음의 상세 나란히 비교: IQE220N15NM5CGSCATMA1 제조: Infineon 및 IQE050N08NM5CGSCATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ 활성사양 비교
| 파라미터 | IQE220N15NM5CGSCATMA1 | IQE050N08NM5CGSCATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.18 | $0.74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| 패키지 | PG-WHTFN-9 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 (trench) |
| 동작 온도 범위 | -55C to +150C (junction) | -55C to +175C (junction, typical) |
| RoHS 상태 | Compliant | — |
| Continuous Drain Current (ID) at TC | — | 99 A |
| Continuous Drain Current (ID) at TA | — | 16 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 5.0 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.8 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation at TC (PD) | — | 100 W |
| Total Power Dissipation at TA (PD) | — | 2.5 W |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant |
| MSL 레벨 | — | 1 |