IQE220N15NM5CGSCATMA1 vs IQE050N08NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE220N15NM5CGSCATMA1 by Infineon and IQE050N08NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE220N15NM5CGSCATMA1

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 βœ“ Active
Infineon
IQE050N08NM5CGSCATMA1

IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon

IQE050N08NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE220N15NM5CGSCATMA1 IQE050N08NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.18 $0.74
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 150 V 80 V
Continuous Drain Current at Ta (ID) 7 A β€”
Continuous Drain Current at Tc (ID) 44 A β€”
Power Dissipation at Ta (PD) 2.5 W β€”
Power Dissipation at Tc (PD) 100 W β€”
On-Resistance (RDS(on)) 22 milliohm (max) β€”
Gate Threshold Voltage (VGS(th)) 4.6 V β€”
Package PG-WHTFN-9 (Source-Down) PG-WHTFN-9-1 (Source-Down)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5, Source-Down OptiMOS 5 (trench)
Operating Temperature Range -55C to +150C (junction) -55C to +175C (junction, typical)
RoHS Status Compliant β€”
Continuous Drain Current (ID) at TC β€” 99 A
Continuous Drain Current (ID) at TA β€” 16 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 5.0 mOhm
Gate Threshold Voltage VGS(th) typ β€” 3.8 V
Gate Charge Qg typ β€” [DATA_NEEDED: total gate charge]
Total Power Dissipation at TC (PD) β€” 100 W
Total Power Dissipation at TA (PD) β€” 2.5 W
Lead-Free / RoHS β€” Lead-free, RoHS compliant
MSL Level β€” 1

Datasheets & Resources

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