IR2010SPBF vs IR2110SPBF 비교

다음의 상세 나란히 비교: IR2010SPBF 제조: Infineon 및 IR2110SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR2010SPBF IR2110SPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.20 $1.98
Configuration Half-Bridge (high + low side) —
Number of Drivers 2 (independent high/low-side outputs) —
Offset Voltage (max) 200 V —
Peak Source/Sink Current 3 A / 3 A —
Logic Input Compatibility CMOS or LSTTL, down to 3.0 V 3.3 V CMOS / LSTTL
Propagation Delay (typ) 95 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
VCC Supply Voltage (low side) 10 V to 20 V —
VB Bootstrap Supply (high side) VCC + 10 V to VCC + 20 V —
동작 온도 -40C to +150C —
Shutdown Feature Yes (active input) —
패키지 16-SOIC (SOIC-16) 16-pin SOIC (SO-16, DW suffix)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant (Pb-free PBF suffix) —
Drive Technology High-speed power MOSFET / IGBT driver —
Channel Matching Matched propagation delays for cross-conduction minimization —
기능 — Half-bridge gate driver
토폴로지 — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
동작 온도 범위 — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

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